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81.
82.
We experimentally studied the in-plane thermal and electrical properties of a suspended platinum nanofilm in thickness of 15 nm. The measured results show that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient of the studied nanofilm are much less than those of the bulk material, while the Lorenz number is greater than the bulk value. Comparing with the results reported previously for the platinum nanofilm in thickness of 28 nm, we further find that the in-plane thermal conductivity, the electrical conductivity and the resistance-temperature coefficient decrease with the decreasing thickness of the nanotilm, while the Lorenz number increases with the decreasing thickness of the nanofilm. These results indicate that strong size effects exist on the in-plane thermal and electrical properties of platinum nanofilms. 相似文献
83.
A. Paesano Jr. S. C. Zanatta S. N. De Medeiros L. F. CÓtica J. B. M. Da Cunha 《Hyperfine Interactions》2005,161(1-4):211-220
We have investigated the mechanosynthesis of gadolinium and yttrium iron garnets by high-energy ball-milling of α-Fe2O3 and Gd2O3 or α-Fe2O3 and Y2O3, respectively, followed by short thermal annealings conducted at moderate temperatures. The samples were characterized by X-ray diffraction and Mössbauer spectroscopy, in order to determine the influence of the milling time and annealing conditions on the final products. For as-milled samples of each rare-earth system, the results revealed the formation of perovskite phases, in relative amounts that depend on the milling time. The formation of garnet phases was observed in as-annealed samples treated at 1000°C for 2 h or 1100°C for 3 h, i.e., at very modest annealing requirements when compared with ordinary solid-state-reaction processes performed without previous high-energy milling. Also, the occurrence was verified of a milling time for which the relative amount of garnet phases formed by annealing was maximized. This time depends on the rare-earth composing the garnet phase and on the annealing temperature. 相似文献
84.
The collapse of a charged and radiating ball in the diffusion limit is studied using a method reported by Herrera and collaborators. The interior solution is matched with the exterior Reissner-Nordström-Vaidya metric to obtain a system of differential equations at the surface of the distribution, which can be integrated numerically for some set of initial data. For one model, the profiles of the physical variables are obtained at any piece of the material in terms of Schwarzschild-like coordinates. 相似文献
85.
Frame Wavelets with Compact Supports for L^2(R^n) 总被引:1,自引:0,他引:1
De Yun YANG King Wei ZHOU Zhu Zhi YUAN 《数学学报(英文版)》2007,23(2):349-356
The construction of frame wavelets with compact supports is a meaningful problem in wavelet analysis. In particular, it is a hard work to construct the frame wavelets with explicit analytic forms. For a given n × n real expansive matrix A, the frame-sets with respect to A are a family of sets in R^n. Based on the frame-sets, a class of high-dimensional frame wavelets with analytic forms are constructed, which can be non-bandlimited, or even compactly supported. As an application, the construction is illustrated by several examples, in which some new frame wavelets with compact supports are constructed. Moreover, since the main result of this paper is about general dilation matrices, in the examples we present a family of frame wavelets associated with some non-integer dilation matrices that is meaningful in computational geometry. 相似文献
86.
High speed machining (HSM) is one of the emerging cutting processes, which is machining at a speed significantly higher than the speed commonly in use on the shop floor. In the last twenty years, high speed machining has received great attentions as a technological solution for high productivity in manufacturing. This article reviews the developments of tool materials in high speed machining operations, and the properties, applications and prospective developments of tool materials in HSM are also presented. 相似文献
87.
唐大鹏 《科技情报开发与经济》2005,15(1):155-156
由于中国民营企业本身成长于国有大中型企业和外资企业的夹缝中,先天资本积累不足,后天管理条件欠缺,导致其发展困难重重,面临严峻的生存压力。基于此,提出了我国民营企业会计监管体系的设计与构想。 相似文献
88.
田兴 《新疆大学学报(理工版)》1991,8(1):53-55
本文分析计算了荧光光纤温度传感器的温敏元件——GsAlAs/GaAs双异质结半导体材料的荧光辐射效率与激励光波长的关系。讨论了温度测量范围及温敏元件GaAlAs层铝含量对激励光源的限制,在0~200℃测温范围内,若采用LED作激励光源,其峰值波长应在0.70~0.76μm之间选择。 相似文献
89.
用飞秒激光(200 fs,1 kHz,800 nm)脉冲在掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯(PMMA)膜中进行了光存储实验研究,包括对样品的吸收光谱、激光照射前后的电子旋转共振(Electron spin resonance,ESR)光谱的测量和讨论。结果表明掺杂稀土离子Ce3 的聚甲基丙烯酸甲酯膜具有较低的写入阈值,有利于高速、并行的三维光存储。实验结果采用传统光学显微镜并行读出。给出了四层存储结果(点间距和层间距分别是4μm和16μm),并讨论了脉冲能量的大小对空腔尺寸的影响,进行高密度存储时,在保证读出信号灰度值足够大的情况下,应选择尽量小的激光脉冲写入能量。实验结果表明这种材料可以应用于三维光信息存储。 相似文献
90.
研究了HfN/HfO2高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中,负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO2高K栅结构的等效 氧化层厚度(EOT)为1.3nm,内含原生缺陷密度较低.研究表明,由于所制备的HfN/HfO2 高K栅结构具有低的原生缺陷密度,因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征,而非工艺缺陷引起的;进一步研究表明,该HfN/HfO2高K栅结构中观察到的NBTI与传统的SiO2基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征,可以被所谓的反应-扩散(R-D)模型表征: HfN/HfO2 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理,即在负 偏置和温度应力作用下,从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生,并由此产生了Si+陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ,这种Si+陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生.
关键词:
高K栅介质
负偏置-温度不稳定性(NBTI)
反应-扩散(R-D)模型 相似文献