Individual interface states and their implications for low-frequency noise in MOSFETs

We show that the wide distribution of time constants required to explain 1/ƒ noise in MOSFETs arises as a natural consequence of the multi-phonon model of carrier trapping into individual Si-SiO₂ interface states. A new class of random telegraph signal found in the drain current of small-area silicon MOSFETs is described. These signals are a result of defect metastability and are shown to be a source of non-Gaussian noise.     

Site Preferences of Hyperfine Impurities in Ni2Al3 Phases

The site occupation of indium solutes in Ni₂Al₃-type compounds was determined using perturbed angular correlation of gamma rays. Measurements were made for compositions on both sides of the stoichiometric composition. Sites were identified through their quadrupole interactions. For transition-metal (TM) rich aluminides and galliumides, indium solutes occupy only one of two inequivalent trivalent-metal sites (Al or Ga). For TM-poor aluminides, indium solutes tend to locate at noncrystallographic sites such as in grain boundaries. For TM-poor galliumides, the solutes occupy nickel sites while close to the stoichiometric composition they also occupy sites on an empty Ni-sublattice. Composition dependences of site preference for indium solutes in Pt₂Al₃ and Ni₂Ga₃ are examined in terms of a recently developed thermodynamic model. This revised version was published online in September 2006 with corrections to the Cover Date.     

Thermally degradable maleimides for reworkable adhesives

New thermosetting materials were developed for reworkable adhesive applications by introducing acetal ester groups as thermally degradable linkages into maleimide compounds. The synthesis of compounds containing maleimide functionality and acetal ester linkages was conducted by a one‐step neat reaction from commercially available materials. The polymerization process and thermal degradation of the synthesized materials were studied. It was found that the acetal ester linkage degraded rapidly above 225 °C, and introduction of this linkage into the adhesive formulation led to improved reworkability of adhesively bonded substrates. A mechanism for reworkability was proposed based on the insight provided by experimental and modeling work. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1073–1084, 2009     

Laser surface-melting of metals studied by PAC

High purity Pt, Ni, Cu, Fe and Al metal foils were electroplated with carrier-free¹¹¹In probe atoms and melted at 293 K using 32 ns ruby laser pulses with energy densities in the range 1–10 J cm⁻². Three distinct lattice locations of the probe atoms were detected in the melted surface layers using perturbed γ-γ angular correlation spectroscopy: (i) defect-free substitutional sites, (ii) non-unique sites with broad distributions of quadrupole interactions, and (iii) a probemonovacancy complex (for Pt only). The defect-free fraction was found to approach 100% when Pt is irradiated at 9 J cm⁻². The fraction of probes on defect-free sites was found to increase with the energy density of the pulse and with the solubility of In in the metals. The data are consistent with the idea that laser surface-melting produces high concentrations of vacancies and lattice sinks, although no thermal trapping of point defects was detected. Supported in part by National Science Foundation grant DMR 86-19688 (Metallurgy Program).     

Eine kolorimetrische Methode zur Bestimmung von freiem Formaldehyd und Hexamethylenamin

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Arsen

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