数字式八脉冲触发器

本文介绍了自行研制的数字式八脉冲触发器．该触发器运行可靠，抗干扰能力强，性能、价格比高，在电力电子技术的应用中有一定的推广价值     

Browder-Petryshyn 型的严格伪压缩映射的粘滞迭代逼近方法

主要研究Browder-Petryshyn型的严格伪压缩映射的粘滞迭代逼近过程,证明了Browder-Petryshyn型的严格伪压缩映射的不动点集F(T)是闭凸集．在q-一致光滑且一致凸的Banach空间中,对于严格伪压缩映射T,利用徐洪坤在2004年引进的粘滞迭代得到的序列弱收敛于T的某个不动点．同时证明了Hilbert空间中Browder-Petryshyn型的严格伪压缩映射的相应迭代序列强收敛到T的某个不动点,其结果推广与改进了徐洪坤2004年的相应结果．     

Analysis method of the effect of fabrication errors on a planar waveguide demultiplexer

The impact of fabrication errors on a planar waveguide demultiplexer is analyzed based on an analytical method. The explicit expression of the transfer function taking into account phase and amplitude errors is presented in order to analyze the loss and crosstalk of the demultiplexer caused by fabrication errors. A basic requirement for the demultiplexer with a certain crosstalk criterion can be easily obtained. Using an etched diffraction grating demultiplexer as an example, it is shown that the analytical results have a good agreement with results from a numerical method.     

三种群食物链交错扩散模型的整体

本文应用能量估计方法和Gagliardo-Nirenberg型不等式证明了一类强耦合反应扩散系统整体解的存在性和一致有界性，该系统是带自扩散和交错扩散项的三种群Lotka-Volterra食物链模型．通过构造Lyapunov函数给出了该模型正平衡点全局渐近稳定的充分条件．     

凸体的曲率映象与仿射表面积

本文研究了一些特殊凸体与其极体的曲率仿射表面积乘积的下界.对任意两个凸体,建立了它们的投影体的混合体积与其仿射表面积的一个不等式（见文[1-15]）.     

标准体系的比例型寿命使用期模型与分析

本文在基于标准被废除按比例进行时的标准体系使用期的两个新模型。首先给出了模型假设条件,然后定义了标准使用期。根据假设给出了两个模型条件下的标准使用期公式,最后通过数值示例说明了标准使用期的公式使用。     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Decoherence Induced by Spin Chain Environment

We study the decoherence process of an exact solvable model that consists of a central spin-1/2 coupling to the surrounding anisotropy spin-1/2 chain in transverse fields. The Loschrnidt echo is calculated to study the character of decoherence with different degree of anisotropy. Our results show that the degree of anisotropy γ greatly affects the decoherence process of the central spin-system when the spin chain is in weak transverse fields, but it gives weak effect in the strong transverse field. The decoherence process of the central system changed dramatically along the line of the critical points, and this may be explained as the reflection of quantum phase transitions.