Enhanced dielectric properties of lead barium zirconate thin films by manganese doping

(Pb_0.5Ba_0.5)ZrO₃ (PBZ) and 1 mol% Mn-doped (Pb_0.5Ba_0.5)ZrO₃ (Mn-PBZ) sol were successfully fabricated, and corresponding thin films were deposited on Pt(1 1 1)/TiO₂/SiO₂/Si(1 0 0) substrates by spin-coating method. Effects of Mn doping on the microstructure and electrical properties of PBZ thin films were investigated systemically. X-ray diffraction patterns showed that both films had a polycrystalline perovskite structure, and that the degree of (1 1 1) orientation were increased by Mn doping. Dielectric measurements illustrated that Mn-doped PBZ thin films not only had a larger dielectric constant, but also possessed a smaller dielectric loss. Accordingly, the tunability and the figure of merit of PBZ films were improved by Mn doping.     

Origin of the 330 nm absorption band and effect of doping Yb in LiYF4 crystals

The electronic structures of LiYF₄ (YLF) crystals containing F color center (YLF-F) and Yb doped YLF crystals (Yb³⁺:YLF, Yb²⁺:YLF) are systematically studied within the framework of the density functional theory. The calculated results indicate that the 330 nm absorption band originates from the F center in YLF crystals. Thus the doping of Yb³⁺ can weaken the 330 nm absorption band by competing with F vacancies in capturing free electrons arising after γ-irradiation and change to Yb². By analyzing the lattice relaxation and the electronic structure of YLF containing Yb²⁺, we can reasonably believe that once Yb²⁺ is formed in YLF crystal, its compensating hole will turn out to be shared by two F⁻ nearest to Yb²⁺ forming a diatomic fluoride molecular ion () perturbed by Yb²⁺, or to say V_F color center. According to the molecular-orbital linear combination of atomic orbital (MO-LCAOs) theory, compared to the alkali halides, e.g. LiF, the in V_F center in LiYF₄ peaks at about 340 nm, which is in agreement with the experimental results.     

Algebraic Properties of the Path Ideal of a Tree

The path ideal (of length t ≥ 2) of a directed graph Γ is the monomial ideal, denoted I _t (Γ), whose generators correspond to the directed paths of length t in Γ. We study some of the algebraic properties of I _t (Γ) when Γ is a tree. We first show that I _t (Γ) is the facet ideal of a simplicial tree. As a consequence, the quotient ring R/I _t (Γ) is always sequentially Cohen–Macaulay, and the Betti numbers of R/I _t (Γ) do not depend upon the characteristic of the field. We study the case of the line graph in greater detail at the end of the article. We give an exact formula for the projective dimension of these ideals, and in some cases, we compute their arithmetical rank.     

A Straightforward Immunoassay Applicable to a Wide Range of Antibodies Based on Surface Enhanced Fluorescence

A straightforward immunoassay based on surface enhanced fluorescence (SEF) has been demonstrated using a fluorescent immune substrate and antibody functionalized-silver nanoparticles. Unlike the conventional SEF-based immunoassay, which usually uses the dye-labeled antibodies and the metallic nanostructured-substrates, the presented immune system does not need the antibodies to be labeled with dye molecules. Thus, this immunoassay can be easily applied to the detection of a wide range of target antigens, which is of great importance for its practical application. The experimental results show that this immunoassay has a good specificity as well as the capacity of quantitative detection. Basically, the surface density of the immuno-adsorbed silver nanoparticles increases with the increased amount of target antigens, resulting in a fluorescence enhancement up to around 7 fold. The dose-responsive performance of the immunoassay has been investigated and the limit of detection (LOD) is 1 ng/mL. Due to its simple preparation method and the wide range of detectable antigens, this presented immunoassay is expected to be helpful for extending the SEF-based application.     

Some estimates for commutators of Riesz transform associated with Schrödinger type operators

Let L₁ = ?Δ + V be a Schr:dinger operator and let L² = (?Δ)² + V² be a Schrödinger type operator on ?ⁿ (n ? 5), where V≠ 0 is a nonnegative potential belonging to certain reverse Hölder class B_s for s ? n/2. The Hardy type space \(H_{{L_2}}^1\) is defined in terms of the maximal function with respect to the semigroup \(\left\{ {{e^{ - t{L_2}}}} \right\}\) and it is identical to the Hardy space \(H_{{L_1}}^1\) established by Dziubański and Zienkiewicz. In this article, we prove the L^p-boundedness of the commutator R_b = bRf - R(bf) generated by the Riesz transform \(R = {\nabla ^2}L_2^{ - 1/2}\), where \(b \in BM{O_\theta }(\varrho )\), which is larger than the space BMO(?ⁿ). Moreover, we prove that R_b is bounded from the Hardy space \(H_{\mathcal{L}_1 }^1 \) into weak \(L_{weak}^1 (\mathbb{R}^n )\).     

Spatial, temporal and spectral emission characteristics from electron oscillation driven by an intense circularly polarized few-cycle laser pulse

The spatial, temporal and spectral emission characteristics of radiation generated from electron oscillations driven by an intense circularly polarized few-cycle laser pulse have been investigated theoretically and numerically using a single electron model. For a femtosecond driving laser pulse with duration of one optical cycle, the maximal radiation emitted by the electron comprises only one electromagnetic pulse having durations much shorter than the optical cycle and belonging to the attosecond range. It is discovered that the influence of the initial phase on the process of full spatial characteristics of the radiation is apparent for intense few-cycle laser pulse. The characteristics can be used to measure the initial phase of intense circularly polarized few-cycle laser pulse in experiments.     

在类比系统中研究引力和黑洞的性质

引力和量子力学的融合是理解时空起源和引力本质的重要问题,也是一个长期悬而未决的基础物理学根本问题。理论物理学家们对此提出了诸多理论猜想,也做出了许多预言。然而一些相关的预言涉及的效应极其微弱,因此难以通过实验观测加以证实。通过类比引力系统,人们可以将这些引力效应转化为实验室可测可控系统的一些效应。对这些类比系统的研究一方面可以帮助人们更深入地理解引力的性质本身,另一方面也可以为其他相关领域的研究提供启发和新的思路。文章将以几个具体的类比系统为例简要介绍类比引力研究的历史和最近的一些研究进展。     

Separability Criteria Based on the Weyl Operators

Entanglement as a vital resource for information processing can be described by special properties of the quantum state. Using the well-known Weyl basis we propose a new Bloch decomposition of the quantum state and study its separability problem. This decomposition enables us to find an alternative characterization of the separability based on the correlation matrix. We show that the criterion is effective in detecting entanglement for the isotropic states, Bell-diagonal states and some PPT entangled states. We also use the Weyl operators to construct an detecting operator for quantum teleportation.     

Qualitative analysis for a mathematical model of aids

In this paper a mathematical model of AIDS is investigated. The conditions of the existence of equilibria and local stability of equilibria are given. The existences of transcritical bifurcation and Hopf bifurcation are also considered, in particular, the conditions for the existence of Hopf bifurcation can be given in terms of the coefficients of the characteristic equation. The method extends the application of the Hopf bifurcation theorem to higher differential equations which occur in biological models, chemical models, and epidemiological models etc.This project is supported by the National Science Foundation Tian Yuan Terms and LNM Institute of Mechanics Academy of Science.This project is supported by the National and Yunnan Province Natural Science Foundation of China.     

Germanium PMOSFETs with Low-Temperature Si2H6 Passivation Featuring High Hole Mobility and Superior Negative Bias Temperature Instability

We investigate negative bias temperature instability （NBTI） on high performance Ge p-channel metal-oxide- semiconductor field-effect transistors （pMOSFETs） with low-temperature Si2H6 passivation. The Ge pMOSFETs exhibit an effective hole mobility of 311 cm2/V.s at an inversion charge density of 2.5 × 1012 cm^-2. NBTI characterization is performed to investigate the linear transconductance （GM,lin） degradation and threshold voltage shift （△VTH） under NBT stress. Ge pMOSFETs with a lOyr lifetime at an operating voltage of -0.72 V are demonstrated. The impact of the Si2H6 passivation temperature is studied. As the passivation temperature increases from 350℃ to 550℃, the degradation of NBTI characteristics, e.g., GM,lin loss, △VTH and an operating voltage for a lifetime of lOyr, is observed.