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针对我国教育现状,为解决“边缘人”和“空心人”的问题,探讨了“高等数学”中所蕴涵的人文精神,认为可以从七个方面来挖掘,使“高等数学”的教育功能更加完备。 相似文献
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针对我国教育现状,为解决“边缘人“和“空心人“的问题,探讨了“高等数学“中所蕴涵的人文精神,认为可以从七个方面来挖掘,使“高等数学“的教育功能更加完备。 相似文献
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Composite-Collector InGaAs/InP Double Heterostructure Bipolar Transistors with Current-Gain Cutoff Frequency of 242 GHz 下载免费PDF全文
To eliminate the conduction band spike at the base-collector interface, an InP/InGaAs double heterostructure bipolar transistor (DHBT) with an InGaAsP composite collector is designed and fabricated using the conventional mesa structure. The DHBT with emitter area of 1.6×15μm^2 exhibits current-gain cutoff frequency ft = 242 OHz at the high collector current density Jc = 2.1 mA/μm^2, which is to our knowledge the highest ft reported for the mesa InP DHBT in China. The breakdown voltage in common-emitter configuration is more than 5 V. The high-speed InP/InGaAs DHBT with high current density digital circuits. is very suitable for the application in ultra high-speed 相似文献
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Growth and Characterization of GaAs/A1GaAs Thue-Morse Quasicrystal Photonic Bandgap Structures 下载免费PDF全文
One-dimensional quasicrystal structures composed of Ⅲ-Ⅴ semiconductor GaAs/AlGaAs multilayers in deterministic Thue-Morse (TM) sequences have been grown by using gas-source molecular beam epitaxy to investigate both the structural and the photonic bandgap properties. The x-ray measurements show that this aperiodic system exhibits obvious periodic spatial correlations, from which the precise thickness of the constitutive layers could be determined. Transmission and reflection measurements experimentally demonstrated plenty of photonic bandgaps with traditional or fractal features existing in those quasicrystal structures, which are in good agreement with the transfer matrix simulations. The diversity of this TM system makes it a good candidate for photonic device applications. 相似文献
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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing 下载免费PDF全文
Carbon-doped In Ga As Bi films on In P:Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/Pt/Au contact resistance of n-type carbon-doped In Ga As Bi films were characterized by Van der Pauw-Hall measurement and transmission line method(TLM)with and without rapid thermal annealing(RTA).It was found that the specific contact resistance decreases gradually with the increase of carrier concentration.The electron concentration exhibits a sharp increase,and the specific contact resistance shows a noticeable reduction after RTA.With RTA,the In Ga As Bi film grown under CBr4 supply pressure of 0.18 Torr exhibited a high electron concentration of 1.6×1021 cm-3 and achieved an ultra-low specific contact resistance of 1×10-8Ω·cm2,revealing that contact resistance depends greatly on the tunneling effect. 相似文献
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Studies on the isolated rat heart perfusion model have proved that perfusion with high Ca_(2+) (4.5 mmol/L), high K~+ (8.7 mmol/L) or tree radical generating system (FRGS) significantly increases myocardial uptake of liposomes. Intravenous injection of liposomes covalently combined with antibody of rat myocardial cells obviously elevates the target action of liposomes to myocardium. Liposome-carried SOD for treatment of rat myocardial ischemia-repertusion injury is much more effective than simple SOD. The results evidence that the liposome as drug carrier for treatment of ischemic heart diseases shows a broad prospect for its clinical use. 相似文献
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光纤通信工程技术传输在通信领域处于重要地位,该文以当前我国光纤通信技术传输的发展现状为基础,对光纤通信工程技术传输的未来发展做出了一定的分析和研究,探讨了未来光纤传输的发展态势. 相似文献