巧构造等差数列 妙解非数列问题

有些数学问题,乍看上去,与数列没有丝毫联系,但仔细研究其结构特征后,又可通过构造基本数列模型使问题巧妙获解,本文略谈构造等差数列解决几类常见的非数列问题,供参考.     

热电共蓄式压缩空气储能系统特性研究

本文通过考虑透平机械特性曲线等非设计工况特性,对热电共蓄式压缩空气储能系统进行性能分析,并与同等条件T的绝热压缩空气储能系统进行了性能对比。初次循环的充放电效率为63.9%,且?损最大的部件为电加热器;多次循环性能分析显示随着循环次数的增多,充放电效率不断增大直至最后稳定;通过与绝热压缩空气储能系统进行性能对比发现,电加热器的加入能够有效提高储能系统的功率和能量等级,且电加热温度与充放电效率负相关。     

Modeling and character analyzing of multiple fractional-order memcapacitors in parallel connection

Recently,the memory elements-based circuits have been addressed frequently in the nonlinear circuit theory due to their unique behaviors.Thus,the modeling and characterizing of the mem-elements become essential.In this paper,the analysis of the multiple fractional-order voltage-controlled memcapacitors model in parallel connection is studied.Firstly,two fractional-order memcapacitors are connected in parallel,the equivalent model is derived,and the characteristic of the equivalent memcapacitor is analyzed in positive or negative connection.Then a new understanding manner according to different rate factor K and fractional orderαis derived to explain the equivalent modeling structure conveniently.Additionally,the negative order appears,which is a consequence of the combination of memcapacitors in different directions.Meanwhile,the equivalent parallel memcapacitance has been drawn to determine that multiple fractional-order memcapacitors could be calculated as one composite memcapacitor.Thus,an arbitrary fractional-order equivalent memcapacitor could be constructed by multiple fractional-order memcapacitors.     

线性调频信号激励过阻尼双稳系统的随机共振现象研究

线性调频信号是工程中常见的一种信号, 由于其为非周期信号, 无法以频域信噪比作为衡量其是否产生随机共振的测量手段, 故鲜有文献研究以线性调频信号为激励信号的随机共振现象. 本文利用线性调频信号在最优分数阶Fourier变换域上的能量聚集性, 首次提出以最优分数阶Fourier变换域上定义的信噪比作为测量手段, 研究了线性调频信号叠加高斯白噪声激励过阻尼双稳系统的随机共振现象, 且发现了以线性调频信号为激励信号时产生的新现象, 即随着信号频率的增大, 随机共振将逐渐减弱, 并给出了合理的解释.仿真的结果与理论分析一致, 验证了本文所提出方法的有效性. 关键词： 线性调频信号 分数阶Fourier变换 随机共振     

外场形式对超冷原子-多聚物分子转化效率的影响

通过改变激光场Rabi频率和原子-多聚物分子耦合强度, 探索了外场形式对超冷原子-多聚物分子转化效率的影响. 首先通过定义时间指数, 对文献所给出的外场做出改进, 讨论了时间指数对转化效率的影响; 然后选取一种更优化的外场形式, 其具有很好的参数鲁棒性, 该外场作用下的绝热过程几乎不存在振荡, 其绝热保真度接近于1, 系统误差较小, 可以稳定、高效地实现超冷原子-多聚物分子的转化. 关键词： 超冷多聚物分子 转化效率 外场形式 绝热保真度     

Study of diphoton decays of the lightest scalar Higgs boson in the Next-to-Minimal Supersymmetric Standard Model

The CMS and ATLAS experiments at the LHC have announced the discovery of a Higgs boson with mass at approximately 125 GeV/c² in the search for the Standard Model Higgs boson via, notably, the γγ and ZZ to four leptons final states. Considering the recent results of the Higgs boson searches from the LHC, we study the lightest scalar Higgs boson h₁ in the Next-to-Minimal Supersymmetric Standard Model by restricting the next-to-lightest scalar Higgs boson h₂ to be the observed to the 125 GeV/c² state. We perform a scan over the relevant NMSSM parameter space that is favoured by low fine-tuning considerations. Moreover, we also take the experimental constraints from direct searches, B-physics observables, relic density, and anomalous magnetic moment of the muon measurements, as well as the theoretical considerations, into account in our specific scan. We find that the signal rate in the two-photon final state for the NMSSM Higgs boson h₁ with the mass range from about 80 GeV/c² to about 122 GeV/c² can be enhanced by a factor of up to 3.5 when the Higgs boson h₂ is required to be compatible with the excess from latest LHC results. This motivates the extension of the search at the LHC for the Higgs boson h₁ in the diphoton final state down to masses of 80 GeV/c², particularly with the upcoming proton-proton collision data to be taken at center-of-mass energies of 13-14 TeV.     

Xe~(26+)入射Au靶离子L壳层空穴的产生与退激辐射

基于两体碰撞过程的能量与角动量守恒,推导出Xe26+离子与Au原子碰撞过程,单离子的L壳层空穴产额与离子动能的理论关系.实验测定了动能2.4-3.6Me V的Xe26+离子入射Au靶,产生的Xe的L-X射线谱,获得了射线产额与离子入射动能的实验关系.结果表明,碰撞过程产生Xe L壳层空穴的同时,产生了一定数目的 M壳层空穴,导致L壳层空穴平均荧光产额显著变大,在实验能量范围,空穴产额的理论值与射线产额的实验值存在较好的一致性.     

AlN插入层对硅衬底GaN薄膜生长的影响

利用金属有机化合物气相外延沉积技术在2inch(5.08cm)Si(111)图形衬底上生长了GaN外延薄膜,在Al组分渐变AlGaN缓冲层与GaN成核层之间引入了AlN插入层,研究了AlN插入层对GaN薄膜生长的影响。结果表明,随着AlN插入层厚度的增加,GaN外延膜(002)面与(102)面X射线衍射摇摆曲线半峰全宽明显变小,晶体质量变好,同时外延膜在放置过程中所产生的裂纹密度逐渐减小直至不产生裂纹。原因在于AlN插入层的厚度对GaN成核层的生长模式有明显影响,较厚的AlN插入层使GaN成核层倾向于岛状生长,造成后续生长的nGaN外延膜具有更多的侧向外延成分,从而降低了GaN外延膜中的位错密度,减少了GaN外延膜中的残余张应力。同时还提出了一种利用荧光显微镜观察黄带发光形貌来表征GaN成核层形貌和生长模式的新方法。     

纯锆上离子注入钇和镧后的表面分析

用金属蒸汽真空弧源，以40kV加速电压对纯锆样品分别进行了10¹⁶—10¹⁷/cm²的钇、镧离子注入，注入温度约为130℃.然后对注入样品进行表面分析.x射线光电子能谱分析表明，注入的钇以Y₂O₃形式存在，镧以La₂O₃形式存在.俄歇电子能谱表明，纯锆基体表面的氧化膜厚度随着离子注入剂量的增加而增加，当离子注入剂量达到10¹⁷/cm²时，氧化膜的厚度达到了最大值.卢瑟福背散射显示镧层的厚度约为30nm，同时直接观察到当离子注入剂量为(La+Y)10¹⁷/cm²时，纯锆样品表面发生了严重的溅射. 关键词： 纯锆 钇和镧离子共注入 卢瑟福背散射 x射线光电子能谱     

46.8MeV的 ~(12)C非弹性散射

在Glauber多重散射理论框架下,使用跃迁密度方法和三种N-N湮没势,计算了46·8MeV的反质子在~(12)C上的非弹性散射微分截面.理论曲线与实验数据符合得较好.