AMS measurement of In-situ produced cosmogenic 10Be in Loess Quartz in Luochuan

Loess is the most important and the most typical continental classic sediments of Quaternary. So the measurement of In-situ produced cosmogenic ¹⁰Be is expected to be used for the Loess stratigraphic age. But the production rate of In-situ produced cosmogenic ¹⁰Be in Loess quartz is very low. It requires very high sensitivity and accuracy of measurement. This work has measured the concentrations of ¹⁰Be of two layers in Loess section of Luochuan including L8, L9 and the concentrations of ¹⁰Be in (of) blank sample with the HI-13 AMS system at China Insitute of Atomic Energy(CIAE), then calculated the content of ¹⁰Be in loess quartz for each layer. The ratio of ¹⁰Be/⁹Be was found in the range of 10^－13. The background of ¹⁰Be/⁹Be was about 3×10^－14.     

光学薄膜椭圆偏振数据反演的优化算法

运用C++语言通过变步长循环的优化算法开发数据处理程序,利用2组数据确定了多周期真实厚度.通过计算SiO2和ZrO薄膜的折射率和单周期及多周期厚度,并与其他方法的计算结果进行对比分析,发现此方法计算结果可以达到较高的精度.对于有吸收的薄膜,利用量子力学原理计算粒子出现在某一点的概率,通过蒙特卡罗模拟的方式来测量粒子的位置,从而对粒子进行刷新.通过基于量子行为粒子群优化和模拟退火的混合算法设计的程序进行计算,可很快跳出局部极小收敛达到全局最优点,在保证精度的同时达到较快的收敛速度.     

基于FT-ICR质谱仪的光解离光谱自动化谱图采集程序的开发与应用

光解离光谱在气相离子结构及动力学研究中发挥着重要的作用.这种方法非常灵活,可在实验室中利用不同种类的激光器及质谱仪的结合来开展相应的研究.但也存在一些问题,例如,自动化水平低,费时,长时间的操作容易引入人为错误,使实验结果的可信度降低.为解决此类问题,该工作开发了一套可用于光谱自动采集和分析的程序AutoMS.该程序包...     

基于矩形波谱分析的图像显著性检测

在计算机图形学与多媒体技术领域,显著性检测具有广泛的应用,已成为许多工作重要的一步.大量计算机图形学与多媒体技术工作(如图像分割、图像标记、视频跟踪)依赖于精确的显著性图.然而,现有的大多数显著性检测算法所得到的结果存在较大缺陷:如边界不明晰、召回率过低等.提出了一种基于矩形波谱分析的显著性检测算法,将图像分块,分别与预先设定好的矩形波构成的模板进行卷积运算,依据所得到的响应,评价某一区域与周围区域的差异性以及在全局中的独特性,赋予其相应的显著性值.通过在不同数据集上的大量实验证明,与现有的大部分显著性检测算法相比,本方法不仅有较高的准确率-召回率,且在得到的显著性图中,具有更明晰的边界.     

激光热自散焦的远场环形结构

本文导出高斯光束通过吸收介质时因热效应引起光线偏转的角度公式,据此对热自散焦效应的远场环形光强分布给出了直观的详尽的解释,指出干涉环状结构起因于从光束横截面的两环线上发出的同倾角光线间的相互干涉.分析了在不同入射光功率和不同束腰位置下的光强分布特性.给出产生环形结构的阈值功率和环数公式.并指出除了存在干涉型的粗环结构之外,还存在着一种起因于衍射效应的细环结构.全部理论分析与实验结果一致.     

多位数序列全加器的光电混合实现

本文报道用光不双稳开关构成多位数序列全加器的方法，并用非线性干涉滤光片双稳开关进行了原理性实验演示，完成了四位二进制数的全加运算。     

丢番图方程1/w＋1/x＋1/y＋1/z＋1/wxyz＝0的一种解法

本文用初等方法研究丢番图方程的整数解问题。证明了时任何非零整数ｗ，方程总有解，只要ｗ．ｘ给定，即可用公式求出方程的一切解．     

Interface states in Al_2O_3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Frequency dependent conductance measurements are implemented to investigate the interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor(MOS) structures. Two types of device structures, namely, the recessed gate structure(RGS) and the normal gate structure(NGS), are studied in the experiment. Interface trap parameters including trap density Dit, trap time constant τit, and trap state energy ETin both devices have been determined. Furthermore,the obtained results demonstrate that the gate recess process can induce extra traps with shallower energy levels at the Al2O3/AlGaN interface due to the damage on the surface of the AlGaN barrier layer resulting from reactive ion etching(RIE).     

A Scheme for Generating Entangled Squeezed States Based on Cavity QED

We propose a scheme for generating entangled squeezed vacuum states of electromagnetical fields. The scheme is based on cavity QED. In this scheme, an atom interacts, successively, with a classical field, two quantum cavity fields, and another classical field. By detecting the final states of the atom, the two quantum cavity fields will be projected to an entangled state.