基于激光光解诱导荧光技术实现燃烧反应区及中间产物CH_3瞬态可视化

实现火焰反应区和不同中间组分的在线二维瞬态成像,在湍流燃烧的基础研究中具有十分重要的意义。用Nd∶YAG激光器的5倍频输出(212.8nm)作为光源,通过激光光解诱导荧光技术在甲烷/空气预混火焰中,成功实现了火焰反应区的瞬态成像,并首次采用该技术实现了CH_3的在线瞬态成像测量。分析了该方法同其他荧光标示物在反应区二维瞬态成像方法的优势,并研究了火焰燃烧过程中其他燃烧中间产物和不同燃空比对CH_3单脉冲成像的影响,讨论了现有条件下该技术的应用范围。根据实验结果,在燃空比Φ=1.2的条件下,在反应区我们获得了信噪比约为8的单脉冲成像,分析火焰中CH_3的单脉冲成像结果可知火焰燃空比在1.0~1.4之间时,或者火焰中CH_3的浓度大于9.3×1015 molecules·cm-3信噪比较好。该项技术在动力机械及其他研究领域的应用有十分重要的参考价值。     

谐波显著度的基频提取方法

我们提出的谐波显著度的基频提取方法,目的是从语音信号中自动获取人声基频,该方法利用抑制因子计算出基频的谐波显著度谱,对各次谐波显著度加权求和之后进行基频轨迹跟踪确定语音的基频序列。在TIMIT掺噪数据集和音乐信息检索评测2005主旋律数据集上,谐波显著度方法的准确率分别达到了88.5%和73.3%,使倍频、半频错误相对降低了80%。实验表明,基于谐波显著度的基频提取方法增强了系统的抗噪性能以及抗倍半频错误的能力。     

多孔硅的表面碳膜钝化

报道对多孔硅（ＰＳ）进行碳膜（ＣＦ）钝化处理的结果。红外吸收光谱表明,经钝化处理样品的表面由Ｓｉ－Ｃ、Ｓｉ－Ｎ和Ｓｉ－Ｏ键所覆盖;荧光我谱表明,经钝化处理的样品较未处理的样品发光强度提高４￣４．５倍,且发光峰位明显蓝移;存放实验显示,经钝化处理的样品发光强度稳定、发光峰位不变。这些结果表明正丁胺可以在多孔硅表面形成优良的钝化碳膜,是一种十分有效的多孔硅后处理途径。     

射频离子阱中N^2＋与N2碰撞电荷转移研究

用电子轰击的方法在射频离子阱中产生的囚禁Ｎ＾２＋,并通过质量选择囚禁和抛出检测研究了平衡能量的约为１．４ｅＶ的Ｎ＾２＋与Ｎ２的低能碰撞过程,测量得到了电荷转移速率系数为１．８９（０．５６）×１０＾０－９ｃｍ＾３ｓ＾０１。与理论计算值Ｌａｎｇｅｖｉｎ速度系数和他人在不同条件下的实验值符合。     

Valley-dependent transport in strain engineering graphene heterojunctions

We study the effect of strain on band structure and valley-dependent transport properties of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing strain and on-site energies. In the presence of strain, the values of transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.     

THEORETICAL RESEARCH ON OPTICAL,THERMAL AND MAGNETIC PROPERTIES OF DICHLOROTETRAPY-RAZOLENICKEL(TYPE II)COMPLEX

In this paper, we have calculated and analyzed theoretically and consistently the absorption spectra, the ZFS and EPR parameters of the ground state, the Schottky low-temperature heat capacity, and the paramagnetic susceptibility of Ni(pz)₄Cl₂ (Dichlorotetrapyrazolenickel) complex by using d⁸[(1-C₂)D^*_4h+C₂D^*_2h] complete configuration mixing unified crystal field theory. The theoretical results agree with the experimental observation very well. We can give a complete and reasonable theoretical interpretation of the optical, thermal and magnetic properties of Ni(pz)₄Cl₂.     

语言声学的最新应用

本文对语言声学研究的最新进展进行综述。首先介绍了人类的言语的产生和感知以及声学分析方面的近期发展,接着重点阐述了计算机处理人类语音(包括语音识别和合成,发音评估以及演唱评价)的最新研究、成果。同时提及了这些研究成果的相关应用。最后是总结与展望。     

Terahertz coherent transition radiation based on an ultrashort electron bunching beam

The experimental result of terahertz (THz) coherent transition radiation generated from an ultrashort electron bunching beam is reported.During this experiment,the window for THz transmission from ultrahigh vacuum to free air is tested.The compact measurement system which can simultaneously test the THz wave power and frequency is built and proofed.With the help of improved Martin-Puplett interferometer and Kramers-Krong transform,the longitudinal bunch length is measured.The results show that the peak power of THz radiation wave is more than 80 kW,and its radiation frequency is from 0.1 THz to 1.5 THz.     

超短脉冲分布反馈染料激光器稳定工作条件分析

 利用耦合波理论,分析了一种作为KrF准分子激光MOPA系统的振荡源-亚皮秒超短脉冲分布反馈染料激光器（DFDL）的输出模式,指出实际的分布反馈染料激光器工作在单纵模状态是周期性增益调制的必然结果。数值模拟结果表明,DFDL输出光谱出现多条谱线的精细结构或调制现象,这是由多个顺序相干脉冲产生的。可以利用这种光谱调制现象来控制激光器的泵浦强度,获得稳定的单脉冲。光谱测量结果表明,在2倍泵浦阈值左右DFDL能够获得稳定的单模单脉冲输出。     

缓冲层生长温度对In0.82Ga0.18As 薄膜结构及电学性能的影响

采用低压金属有机化学气相沉积(LP-MOCVD)技术,两步生长法在InP衬底上制备In_0.82Ga_0.18As材料。研究缓冲层的生长温度对In_0.82Ga_0.18As薄膜的结构及电学性能的影响。固定外延薄膜的生长条件,仅改变缓冲层生长温度(分别为410,430,450,470 ℃),且维持缓冲层其他生长条件不变。用拉曼散射研究样品的结构性能,测量四个样品的拉曼散射光谱,得到样品的GaAs的纵向光学(LO)声子散射峰的非对称比分别为1.53,1.52,1.39和1.76。测量样品的霍耳效应表明,载流子浓度随缓冲层生长温度变化而改变,同时迁移率也随缓冲层生长温度变化而改变。通过实验得出:缓冲层的生长温度能够影响In_0.82Ga_0.18As薄膜的结构及电学性能。最佳的缓冲层生长温度为450 ℃。