BEPCⅡ LINAC束流光学匹配及轨道校正计算研究

 北京正负电子对撞机直线注入器(BEPCⅡ LINAC)的升级改进要求建立束流光学匹配计算和轨道校正系统，为此对束流光学匹配计算和轨道校正计算的方法进行了研究，并采用VC++语言编写了相应的程序，利用最小二乘法原理进行了束流光学匹配计算，模拟了束流轨道校正，取得了较为理想的结果。     

安徽省豹猫的分布和数量

应用皮张收购资料的统计和访问调查、野外实地考察等方法，研究了豹猫在安徽省的分布、数量及历史变化。     

加拿大UBC化学系教学和科研简介

我们作为访问学者于1988—1990年间在加拿大不列颠哥伦比亚大学(The University ofBritish Columbia缩写为UBC)化学系考察与进修。 UBC创办于1915年秋,它坐落于温哥华市。全校有学生约4万名,其中包括研究生4千多名。UBC设有12个学院(农业科学、应用科学、文学、商业管理、牙学、教育、森林、研究生院、     

中药材中孳生粉螨的初步调查

本文采用清水漂浮法和塔氏电热集螨器分离法,共分离中药材样本124种,1240份,从中分离出粉螨45种,隶属7科23属.得出结论:中药材粉螨的污染严重,应加强对中药螨类的防治,以保护中药材及预防人体螨病.     

一个电磁感应佯谬及其理论分析

提出一个令人困惑的电磁感应问题，并运用电磁学理论对其进行了详尽的理论分析。     

Antiphase State in Passively Q-Switched Yb：YAG Microchip Lasers with a Nd,Cr：YAG as Saturable Absorber

We experimentally investigate the antiphase dynamics phenomenon that occurs in a diode-pumped passively Q-switched Yb:YAG multimode laser with a Nd,Cr:YAG saturable absorber. Due to the effect of spatial hole burning, the multimode lasers with one, two, or three modes at different pump power are observed, and the pulses sequences display classic antiphase dynamics.     

BEPCII直线注入器的尾场效应

BEPCII直线注入器中的强流、短束团的尾场效应将损害束流的性能.用分析解和数值模拟计算的方法,系统地研究了尾场对纵向和径向束流动力学的影响,包括单束团的短程尾场和多束团的长程尾场对束流能量、能散、发射度、轨道和初级电子束在正电子产生靶上束斑尺寸的影响等.研究了有效抑制这些尾场效应的措施     

闭曲面上C0流有伪轨跟踪性质的条件

给出了闭曲面上奇点孤立的C⁰流有伪轨跟踪性质的充分必要条件     

Synthesis of ZnAl2O4/α-Al2O3 complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnOfilm and α-Al2O3 substrate, ZnAl2O4/α-Al2O3 complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl2O4 changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM)images indicate that the surface morphology of ZnAl2O4 transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRDspectra present that ZnAl2O4 prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl2O4/α-Al2O3 substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes from c-axis single crystal to poly-crystal as ZnAl2O4 layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl2O4 layer can promote nucleation at initial stage of GaN growth, which leadsto the (0001)-oriented GaN film.