吸收式光纤温度传感器的研究

提出了一种利用半导体光吸收谱随温度变化原理设计的半导体吸收式光纤温度传感器.该传感器用GaAs晶片作为温度敏感元件,以光纤作为传光介质,发光二极管作为光源,光电管作为光电转换器件.利用双光束补偿原理,消除了由于光源不稳定产生的干扰.研制出的光纤传感器具有体积小,结构简单,抗电磁干扰,灵敏度高等优点.实验表明:该传感器在－20℃~85℃温度范围内可以达到0.1℃的准确度,可以实现强电磁干扰下的高空飞行器内环境温度的测量.为进一步实现光传飞控系统中的温度测控奠定了基础.     

Structural and thermodynamic properties of AlB2 compound

We employ a first-principles plane wave method with the relativistic analytic pseudopotential of Hartwigsen, Goedecker and Hutter (HGH) scheme in the frame of DFT to calculate the equilibrium lattice parameters and the thermodynamic properties of AlB₂ compound with hcp structure. The obtained lattice parameters are in good agreement with the available experimental data and those calculated by others. Through the quasi-harmonic Debye model, obtained successfully are the dependences of the normalized lattice parameters a/a₀ and c/c₀ on pressure P, the normalized primitive cell volume V/V₀ on pressure P, the variation of the thermal expansion α with pressure P and temperature T, as well as the Debye temperature \Theta_D and the heat capacity C_V on pressure P and temperature T.     

Gd3+对Ca0.8Zn0.2TiO3:Pr3+红色发光材料的敏化作用

采用溶胶-凝胶法在较低温度下合成了红色发光材料Ca0.8Zn0.2TiO3:0.002Pr3 ,xGd3 .金属离子预先溶解含有柠檬酸的乙二醇溶液中.XRD表明在800℃灼烧2h形成了钛酸盐的晶体.荧光检测结果表明所合成样品的特征激发峰为330nm、特征发射峰为614nm,分别对应于O(2p)→Ti(3d)带间跃迁和Pr3 的1D2→3H4的特征发射.样品的发光强度随x的不同而不同,发光强度增强了29%-69%.当x＝0.0005时,即nPr3 :nGd3 ＝4∶1时样品的红色发光强度最强,发光强度增强了69%.     

8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide分子的晶体结构

运用层析法、结晶法从狭苞橐吾全草中分离得到艾里莫芬烷型倍半萜8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide化合物,并通过质谱、核磁共振氢谱和碳谱、氢核-氢核相关谱、异核多量子相干谱和异核多键相干谱进行结构鉴定．其单晶经X射线衍射测试表明,其晶体属正交晶系,空间群为P212121,晶胞参数为: a=6．8519(5),b=10．7191(8),c=18．5942(14)A,V=1365．67(18) A3,Z=4,Dc=1．354 mg／m3．F(000)=592,μ=0．101 mm-1     

A New Type of Terahertz Waveguides

A new type of THz waveguides, which employs a solid polyethylene rod as the core and polyethylene tubes in a periodic array of square lattice as the cladding, is proposed. Optical properties of this new THz waveguide, especially in dispersion, confinement loss and single mode property, are investigated in detail with the plane wave expansion method and the beam propagation method. Numerical results demonstrate that the new THz waveguide can reach not only low dispersion but also low confinement loss at single mode propagation. Therefore, the square lattice structure is a better candidate as THz waveguides than the triangular ones.     

LBM伪势MRT三维模型GPU并行计算的性能优化

格子Boltzmann方法伪势模型算法中的格点间计算未完全局部化,因此在并行计算时需要更多次的全局内存读写、使用更多数量的寄存器和线程同步操作,从而导致GPU并行计算效率下降.本文针对伪势模型并行计算的局限性,基于三维十五速格子结构的多松弛时间伪势模型,以气液相分离为算例,通过合并访问的方式提高全局内存的读写效率;并提出一种"定向转移"算法,提高格子边界格点获取邻居格点数据的效率;最后探索不同资源分配中各种因素对计算效率的影响,总结最优资源分配的方法.     

远程控制在大功率固体激光加工系统中的应用

针对目前大功率固体激光加工系统的特点,结合相关产品使用的网络构架,研制开发了一套基于Internet的远程监控系统。它是一种将网络技术与系统监控相结合,在异地通过Internet实时监控系统的运行状态,并为系统的故障诊断提供依据的技术。该系统具有高效性、准确性和实时性等特点。在设计方面采用了先进的软件构架,可以实时监控激光加工系统的操作情况和参数状态;查询激光加工系统的当前数据和历史数据,并对开放权限的数据进行修改;通过和用户在线沟通完成疑难问题的解答。     

Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

双奇核142Pm高自旋态能级纲图

利用能量为75—95MeV19F束流,通过反应¹²⁸Te(¹⁹F,5nγ)¹⁴²Pm研究了双奇核¹⁴²Pm的高自旋态能级结构.实验中进行了γ射线的激发函数、γ射线单谱和γγ符合测量.建立了激发能达7030.0keV的¹⁴²Pm的能级纲图,其中包括新发现的25条γ射线和13个新能级.基于实验测量的γ跃迁各向异性度,建议了¹⁴²Pm能级的自旋值.     

关于PCG迭代矩阵特征值近似计算

对于预处理共轭梯度法,本文给出其迭代矩阵AM^-1与三对角阵B_s之间的关系,并对B_s的特征值分布作了分析,进而得到关于AM^-1特征值的一些性质。通过算例对两者的特征值及条件数进行了探讨。