无铅和少铅的有机-无机杂化钙钛矿太阳电池研究进展

基于有机-无机杂化卤化铅材料的钙钛矿太阳电池的转换效率在短短几年内已迅速突破22%,为未来能源问题的解决带来了曙光,同时也引起了高度重视.但紧随其后的商品化、产业化发展需求极大地增加了对绿色、无毒的高效无铅钙钛矿太阳电池进行研究和开发的重要性和紧迫性.为进一步加快环境友好型钙钛矿太阳电池的研发进度,对目前无铅和少铅钙钛矿太阳电池的发展现状进行了综述.着重讨论了替代元素种类及其浓度、制备工艺等对薄膜和电池性能的影响,以期对电池的工作机理、替代元素的作用机理有更加深刻的认识,为新型环保、高效的钙钛矿太阳电池的制备提供指导.     

微晶硅薄膜高速沉积及电学性质的研究

采用甚高频等离子体增强化学气相沉积（VHF-PECVD）技术在高功率密度和高压强条件下,通过改变硅烷浓度和气体总流量对薄膜沉积参数进行了两因素优化,最终在硅烷浓度为45%,气体总流量为100 sccm条件下,获得沉积速率142 nm/s,电导激活能047 eV的优质硅薄膜;同时,通过单因素优化制备出沉积速率为21 nm/s的微晶硅薄膜.利用晶粒间界势垒模型和费米能级统计偏移模型对薄膜的电学特性和传导行为分别进行了研究分析,同时初步分析了“后氧化”对薄膜电学性能的影响. 关键词： μc-Si:H 甚高频等离子体增强化学气相沉积 高速沉积 电学特性     

苏州大学学生辍学情况分析（1978—1995）

本统计苏州大学１９７８～１９９５期间学生死亡，退学，休学，共３２１例，其中因健康原因占５９．１９％，非健康原因占４０．８１％，并再分为１９７８～１９８６，１９８７～１９９５两个阶段统计，前一阶段健康原因占８０．５６％，后一阶段仅占４１．８１％，反映近几年心理，社会因素，学生个人行为不良等造成辍学的比例上升，内还列举因健康原因辍学的前三位病因是：传染病，精神疾患，恶性肿瘤，因非健康原因辍学的前三     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.     

徐州都市圈县域工业发展时空分异

采用空间自相关分析法,以县域为研究单元,对2000~2012年徐州都市圈工业发展时空格局特征进行了分析.结果表明:徐州都市圈县域工业发展的相对差异呈波动性缩小之势,而各县域之间呈现正空间相关性且集聚态势有加强趋势,但空间集聚程度不高;该都市圈县域工业集聚程度呈以徐州市区为核心向外围降低的圈层分布格局,且近年来沿东陇海线向沿海延展的轴线发展格局初现,而南部、西部地区的工业边缘化现象明显.根据相邻县域间的关系,将徐州都市圈各县域分为扩散发展型、极化发展型、过渡发展型和落后均衡型.     

江苏省产业系统适应性时空格局特征分析

在构建区域产业系统适应性评价模型的基础上,探讨1996~2012年江苏省产业系统适应性时空格局特征.结果表明:1996~2012年江苏省产业系统适应性总体呈增强趋势,但各区域差异较大;江苏省产业系统适应性、脆弱性和恢复力均呈现南高北低的空间格局;而敏感性则呈南北低中间高的"凸"字型格局.据此,将全省划分为4类区域,即高脆弱高适应型、高脆弱低适应型、低脆弱高适应型、低脆弱低适应型.降低脆弱性和敏感性,增强恢复力,是提高江苏省产业系统适应能力的主要路径.     

方阵零特征值代数重数与秩之间的关系

在已知零特征值代数重数时,给出了矩阵零特征值代数重数与矩阵秩之间的内在必然联系,及其一般应用.     

等离子体增强CVD法沉积的微晶硅薄膜的微结构研究

本文系统研究了PECVD法沉积μc-Si薄膜中衬低温度、氢气稀释率和射频功率等参数对μc-Si薄膜结构特性的影响.表明:随着衬低温度的增加、氢气稀释率的增大、射频功率的提高,薄膜的晶化率增大.沉积薄膜的晶化率最大可达80;,表面粗糙度大约为30nm.通过对反应过程中的能量变化进行了分析,得到反应为放热反应,且非晶结构对沉积参数比较敏感.     

PECVD法低温制备微晶硅薄膜的晶化控制

采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上低温制备了微晶硅(μc-Si:H)薄膜。利用拉曼(Raman)散射谱、原子力显微镜(AFM)研究了H2稀释、衬底温度、射频功率等对薄膜晶化的影响。研究结果表明,当H2稀释比从95%升高到99%、衬底温度从200℃逐渐升高到400℃、硅膜的晶化率逐渐提高,结构逐渐由非晶向微晶转变,射频功率对薄膜晶化的影响有一最优值。     

ZnO/SnO2复合透明导电膜性能的研究

采用直流磁控溅射工艺在SnO:透明导电玻璃上沉积一层ZnO膜,制备出ZnO/SnO2复合透明导电膜,作为硅薄膜太阳电池前电极.比较了具有不同ZnO厚度的复合膜氢轰击前后的光电性能,发现适当控制ZnO膜的厚度至关重要.研究了快速热退火(RTA)对薄膜的结构及光电性能的影响,发现400℃退火能够改善薄膜的光学性能.