溶胶-凝胶法制备Sr2Bi4Ti5O18薄膜及其铁电性能研究

采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO₂/Si(100)衬底上的铁电性能优良的Sr₂Bi₄Ti₅O₁₈ (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明：薄膜具有单一的层状钙钛矿结构，且为随机取向；薄膜表面光滑，无裂纹，厚度约为725nm；铁电性能测试显示较饱和、方形的电滞回线，当外电场强度为275kV/cm时 关键词： 溶胶-凝胶法 铁电薄膜 2Bi₄Ti₅O₁₈')" href="#">Sr₂Bi₄Ti₅O₁₈     

川麦冬皂苷类化学成分的研究

从川麦冬[Ophiopogon japonicus (Thunb.) Ker-Gawl.]中分离得到四个皂苷类成分, 分别鉴定为14-hydroxy sprengerinin C (1), sprengerinin C (2), ophiogenin-3-O-α-L-rhamnopyranosyl-(1→2)-β-D-glucopyranoside (3)和β-胡萝卜苷(4, β-sitosterol β-D-glucopyranoside). 其中14-hydroxy sprengerinin C为新的C27甾体皂苷, 化合物sprengerinin C为首次从该植物分离得到. 运用现代波谱技术, 包括二维核磁共振谱和高分辨质谱, 对上述化合物的结构进行了确证.     

化学腐蚀法制备发光硅纳米颗粒

用硝酸和氢氟酸的混合酸液腐蚀普通硅粉,经过超声空化作用,分别在去离子水、无水乙醇中制备出硅纳米晶颗粒.硅纳米颗粒的平均粒径约为2 nm,它们或单独存在,或包裹于非晶态物质中.在320 nm的光激发下,硅纳米颗粒的悬浮液在390 nm处呈现一明显的紫外发光峰,理论分析证明该发光峰与硅量子点的量子限制效应有关.     

掺杂和共生对层状钙钛矿铁电材料剩余极化的影响

掺杂与组构共生结构都是增大铋系层状钙钛矿结构铁电材料（BLSFs）剩余极化（2Pr）的有效手段。同价元素掺杂时，2Pr的变化由氧空位浓度，晶格畸变程度，铋氧层的完整性，以及掺杂离子与氧离子的形成的共价键强弱有关。高价阳离子对A、B位进行掺杂时，都可降低氧空位浓度并减弱其动性，从而增大2Pr。两种不同的BLSFs组构成共生结构后，铋氧层以及与之相连的氧八面体的结构都发生变化，使共生结构的2Pr大于其任一组成单元。2Pr的增大还可通过改进制备工艺来实现，如进行高温（高于居里温度）淬火等。     

(Bi,La)4Ti3O12-Sr(Bi,La)4Ti4O15共生结构铁电材料性能研究

采用固相烧结工艺，制备了不同La掺杂量(x=0.00，0.25，0.50，0.75，1.00，1.25和1.50) 的(Bi, La)₄Ti₃O₁₂-Sr(Bi, La)₄Ti4O₁₅ (SrBi_8-xLa_xT i₇O₂₇)共生结构铁电陶瓷样品.用x射线衍射对其进行微结构分析 ，并测量铁 关键词： 4Ti₃O₁₂-SrBi₄Ti₄O₁₅')" href="#">Bi₄Ti₃O₁₂-SrBi₄Ti_{4O15 La掺杂 铁电性能 居里温度 弛豫铁电}     

混合气体介质中三倍频辐射的产生实验

将355 nm光通过单一的X e或者X e-A r混合气体介质产生118 nm辐射,记录不同气体压力下光激励丙酮光解的质谱图,通过监控丙酮分子离子峰(m/z=58)的强度来掌控118 nm光的产生效率.结果表明:在实验光学器件、激光光强相同的条件下,混合气体介质中三倍频辐射产生效率比单一气体中强.当混合气体中A r气体压力保持在1.000 kPa,p(X e)¨p(A r)=5.6时,产生的118 nm辐射最强,实现了该实验条件下倍频产生最佳的相位匹配.     

Multiferroic properties of solben gel derived Bi5Fe1-xCoxTi3O15 thin films

Co-doped Bi₅FeTi₃O₁₅ thin films (BFCT-x, Bi₅Fe_1-xCo_xTi₃O₁₅) were prepared using a sol—gel technique. XRD patterns confirm their single phase Aurivillius structure, and the corresponding powder Rietveld analysis indicates the change of space group around x=0.12. The magnetic hysteresis loops are obtained and ferromagnetism is therefore confirmed in BFCT-x thin films. The remanent magnetization (M_r) first increases and reaches the maximum value of 0.42 emu/cm³ at x=0.12 due to the possible Fe³⁺—O—Co³⁺ ferromagnetic coupling. When x = 0.25, the M_r increases again because of the dominant Fe³⁺—O—Co³⁺ ferromagnetic coupling. The remanent polarization (2P_r) of BFCT-0.25 was measured to be as high as 62 μC/cm², a 75% increase when compared with the non-doped BFCT-0 films. The 2P_r remains almost unchanged after being subjected to 5.2 × 10⁹ read/write cycles. Greatly enhanced ferroelectric properties are considered to be associated with decreased leakage current density.     

La掺杂BiFe_(0.5)Co_(0.5)O_3陶瓷的结构和性能

采用固相烧结工艺制备了LaxBi1-xFe0.5Co0.5O3(BLFCO-x,x=0.00,0.05,0.15,0.30)陶瓷样品,研究了La掺杂对BiFe0.5Co0.5O3陶瓷结构、漏电流、磁性能以及介电性能的影响.X射线衍射测试结果显示,BLFCO-x样品基本形成了BFCO的相,但随着La的掺杂,晶格常数发生改变,结构向四方相转变.少量La离子的掺入降低了BFCO的漏电流.在常温下,随着La离子浓度的增大,BLFCO-x样品的磁性逐渐下降.样品的变温介电结果表明,当La离子浓度较小时,存在两个介电峰,但La离子浓度较大时,呈现单一介电峰.     

Relaxation of Dielectric Loss Peak over Intermediate Temperature Range in Bi5TiNbWO15 Intergrowth

A dielectric loss peak with relaxation-type characteristic is observed in Bi5TiNbWO15 over 200-400℃. The modified Cole-Cole relation by introducing relaxation strength as another important fitting parameter is used to describe this temperature-dependent behaviour of dielectric relaxation process. This peak is considered to be associated with the oxygen vacancies inside the grains and with its activation energy by relaxation determined to be 0.76eV. The obtained broadening factor α is around 0.4, which indicates a strong correlation between those relaxation units. It is confirmed that the behaviour of this peak is due to the combined effects of the dielectric relaxation and electrical conduction by the thermal motion of oxygen vacancies. These results axe further confirmed in Bi5TiNbWO15 samples through oxidization atmosphere treatment and Nd modification respectively.