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压电驻极体是具有压电效应的微孔结构空间电荷驻极体材料,其压电性能与材料的微结构和空间电荷密切相关.本文首先利用压缩气体膨化工艺对聚丙烯(PP)的微结构进行改性,然后利用接触极化方法,研究了极化电压与PP膜空间电荷密度之间的关系,及其对压电性能的影响.结果表明对于极化前厚度为100μm的PP膜,其内部建立有序空间电荷分布的阈值极化电压为2 kV;一旦有序空间电荷建立起来,PP膜即具有压电效应.随着极化电压的提高,PP膜的空间电荷密度逐步增大,压电效应显著增强.当峰值电压为8 kV时,PP膜电极上的电荷密度、准静态压电系数和品质因数FOMv(d33·g33)分别为0.56 mC/m2,379 pC/N和8.6(GPa)-1.PP压电驻极体膜的FOMv比聚偏氟乙烯(PVDF)铁电聚合物膜高2个量级以上,且声阻抗非常低(~0.025 MRayl),因此该压电膜在超声波发射-接收系统或脉冲-回波系统中具有明显的优势. 相似文献
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Zn杂质扩散诱导AlGaInP/GaInP量子阱混杂 总被引:1,自引:0,他引:1
杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口,提高大功率半导体激光器的输出功率.以Zn2As2为扩散源,采用闭管扩散方式,在550℃下对650 nm半导体激光器的外延片进行了一系列Zn杂质扩散诱导量子阱混杂的实验.实验发现,随着扩散时间从20~120 min,样品光致发光(PL)谱蓝移偏移增加,峰值波长蓝移53 nm;当扩散时间超过60 min后,样品的PL谱中不仅出现了常见的蓝移峰,同时还出现了红移峰,峰值波长红移32 nm.分析表明PL谱蓝移来自Zn扩散引起的AlGaInP/GaInP间的量子阱混杂;红移来自Zn杂质扩散对样品中Ga0.51In0.49P缓冲层的影响.还研究了扩散温度(550℃)和扩散时间对样品晶体品质的影响,并在理论上计算了AlGaInP/GaInP量子阱混杂巾的Al-Ga的互扩散系数. 相似文献
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The layer structure of GaInP/AlGaInP quantum well laser diodes (LDs) was grown on GaAs substrate using low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. In order to improve the catastrophic optical damage (COD) level of devices, a nonabsorbing window (NAW), which was based on Zn diffusion-induced quantum well intermixing, was fabricated near the both ends of the cavities. Zn diffusions were respectively carried out at 480, 500, 520, 540, and 580℃ for 20 minutes. The largest energy blue shift of 189.1 meV was observed in the window regions at 580℃. When the blue shift was 24.7 meV at 480℃, the COD power for the window LD was 86.7% higher than the conventional LD. 相似文献
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介绍航电系统综合试验流程管理的设计.建立以试验需求为导向,集测试用例管理、试验资源分配、试验构型管理等功能为一体的电子化试验流程管理平台,保证试验过程可追溯性. 相似文献
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Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R 下载免费PDF全文
We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80roW without kinks, and the maximum output power was 184roW at 22~C. The threshold current was 40 mA. 相似文献
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The system of L-band 2 × 10 Gb/s WDM transmission over conventional single mode fibre with 600 km by chirped fibre Bragg gratings dispersion compensation 下载免费PDF全文
A chirped fibre Bragg grating according to ITU-T suggested L-band (2nd channel λ1 = 1570.83 nm; 80th channel λ2 = 1603.57 nm) with more than 1800 ps/nm single channel dispersion compensation is presented in this paper, of which the cladding mode loss, the delay curve ripple and the power fluctuation of the reflected spectrum are less than 0.5 dB, 50 ps and 0.25 dB, respectively. With this new FBG as dispersion compensation device, a 2 × 10 Gb/s wavelength division multiplexing (WDM) L-band transmission of 600 km based on conventional single mode fibre (G.652 fibre) is performed without forward error correction. The bit error rate (BER) is less than 10-12 and the power penalties of the 2nd and 80th channel of L-band are 1.8 dB and 2.0 dB, respectively. 相似文献