Laser-induced defects in optical multilayer coatings by the spatial resolved method

The spatial resolved method, which measures the laser-induced damage fluence by identifying the location of the damage point in the Gaussian beam three-dimensional direction, is demonstrated. The advantages and practicality of this method have been explained. Taking a triple frequency beam splitter as an example, the defect damage fluence can be accurately calculated by the spatial resolved method. The different defect damage performance of the triple frequency splitter is distinguished under irradiations of only the 355 and 532 nm lasers. The spatial resolved method provides a way to obtain precise information of optical film defect information.     

中柬关系何以如此密切

对于西哈努克的后事安排,中国给予了前所未有的重视和最大程度的协助,可以说是极尽哀荣.胡锦涛、温家宝、习近平等党和国家领导人先后前往看望太后和国王、吊唁和向西哈努克遗体告别,国务委员戴秉国护送西哈努克灵柩回国,北京新华门、天安门广场、外交部以及中国驻柬埔寨使馆等当天降半旗志哀,中国中央电视台进行了多天的"轰炸式"报道.中国对已经淡出社会政治事务多年的西哈努克辞世如此重视,说明目前的中柬关系确实达到了相当的密切程度.     

Dislocation slip behaviors in high-quality bulk GaN investigated by nanoindentation

The dislocation slip behaviors in GaN bulk crystal are investigated by nanoindentation, the dislocation distribution patterns formed around an impress are observed by cathodoluminescence (CL) and cross-sectional transmission electron microscope (TEM). Dislocation loops, vacancy luminescence, and cross-slips show hexagonal symmetry around the <11-20> and <1-100> direction on c-plane. It is found that the slip planes of dislocation in GaN crystal are dominated in {0001} basal plane and {10-11} pyramid plane. According to the dislocation intersection theory, we come up with the dislocation formation process and the related mechanisms are discussed.     

Dependence of wavDependence of wavefront errors on nonuniformity of thin films

In contrast to uncoated substrate, a nonlinear relationship of phase shift with the thicknesses of the thin film makes the calculation of wavefront aberration complicated. A program is compiled to calculate the wavefront aberration of multilayer thin film produced by thickness nonuniformity. The physical thickness and the optical phase change on reflection are considered. As an example, the wavefront aberration of the all-dielectric mirror is presented in ArF excimer lithography system with a typical thickness distribution. In addition, the wavefront errors of the thin film at wavelengths of 193 and 633 nm are compared in the one-piece and two-piece arrangements. Results show that the phase shift upon reflection of the thin film produced by thickness nonuniformity is very sensitive to the incident angle, wavelength, and polarization.     

单层含硫空位MoS2光伏效应的第一性原理研究

基于非平衡态格林函数——密度泛函理论，采用第一性原理研究方法，对单层含硫空位MoS₂的光伏效应进行了研究.利用能带图和联合态密度分析单层含硫空位MoS₂的光响应函数.结果表明:对于单层含硫空位的MoS₂，线偏光电流效应不明显，而圆偏光电流效应比较明显.计算模拟了随偏振角(相位角)变化的光响应函数，计算结果符合唯象理论.单层含硫空位的MoS₂可被应用于新型电子和光电子器件中，为进一步认识单层硫空位MoS₂的光电流效应提供了新的理论基础.     

煤尘爆炸影响因素的数值模拟（英文）

文章建立了煤尘爆炸的数学物理模型和反应模型,通过采用CE/SE方法求解煤尘爆炸的两相流模型方程,数值模拟分析了初始粒径、环境压力和温度对煤尘爆炸的影响。根据压力、温度场的演化和波系图,得到了爆炸的传播规律,给出了爆炸阈值随煤尘粒径、初始压力和温度的变化趋势。另外,考虑到煤尘浓度在空间上的变化,按照一定浓度梯度设置了煤尘的分布,模拟得到了局部点火爆炸后,空间流场中冲击波传播和压力、温度衰减规律。本文研究方法和结果可为相关工程分析提供参考和技术支撑。     

马铃薯辛烯基琥珀酸淀粉酯的制备工艺研究

以马铃薯淀粉为原料，辛烯基琥珀酸酐为亲核试剂，水相法制备辛烯基琥珀酸淀粉酯，以取代度为衡量指标，利用单因素试验与正交试验结合方法对影响它的主要因素进行分析，得出结论。     

三维数阵的框架定义及运算 ——处理复杂系统的新思维系列之十八

本系列论文基于《多边矩阵理论》由东方整体性思维所启迪，试图提供并完善一套从整体到局部处理复杂系统多指标问题、非均匀性问题、非线性问题的强有力的数学工具，并对其进行严格的理论推导和证明。作为系列论文的第十八篇，主要研究了三维数阵的框架定义及运算，将这些运算统一成与矩阵同构的形式，便于对三维数阵处理。     

测量结果及其不确定度的修约方法

基于国家计量技术规范和实际应用情况,文章提出,为了保证修约值最接近原始数值、修约方法规范统一、易于操作,测量不确定度应统一取成两位有效位数,并据此来修约测量结果.