Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

国内外花卉产业动态与大理州花卉产业发展定位

一、国内外花卉产业发展趋势1、花卉业是一个生机勃勃的朝阳产业从全球范围来看，花卉业是一个生机勃勃的朝阳产业，有一定条件的国家和地区，都在大力发展花卉产业，应用多种科技手段，实行专业性规模生产，大树名牌，大搞营销，建立大市场，搞活大流通，实行不断降低成本、提高产品质量的花卉系统生产与经营。     

镍基整体式催化剂重整净化生物制粗燃气性能的研究

以萘为焦油模型化合物，考察了镍基整体式催化剂上生物质粗燃气干重整和临氧重整的性能。镍基重整催化剂表现出良好的催化重整活性，焦油全部转化为H2、CO及微量轻质组分。在750℃下连续反应108h，未检测到反应器压降变化和CH4与焦油转化率下降，整体式催化剂表现出较好的活性和稳定性。     

酸化油固定床酶法合成生物柴油研究

以固定化的假丝酵母酶为催化剂，在三段式固定床反应器内，醇油摩尔比为1：1，采用分级流加甲醇的方式，将高酸值的酸化油转化为生物柴油，探讨了酶量、溶剂量、水量、温度、反应液流速等与产物中甲酯含量的关系。正交实验结果表明，反应的最适条件为酶用量、溶剂量、水量分别为油重的15％、10％、10％，反应液流速为0.8g·min^-1，温度为45℃，在此条件下，产物中甲酯含量达到了90．18％。     

相对论性电子在行波磁场中的运动

相对论性电子在周期性磁场中的运动将产生自发辐射，这是产生自由电子激光的基础。本采用的行波磁场，是一种新型的周期性磁场。通过讨论要以看出，当电子通过这种磁场时也将产生自发辐射，从而说明该磁场能做为自由电子激光器的摆动器。     

“我要让全世界穷人都能学电脑

巴西一位中学电脑教师毅然辞去工作,以"宗教般的热情"在贫民窟穷人中举办电脑培训班。为什么他要这样做?这样做的意义何在?请看下面的通讯。     

浅析用奥氏气体分析仪测定煤气中的可燃组分

主要阐述了用奥氏气体分析仪测定煤气中可燃组分的分析方法，并推导出了煤气中H2和CH4含量的计算公式。     

关于连续调制PTR三维理论模型的一点修正

计算侧面热交换对样品后表面相位信号的影响，证明在连续调制ＰＴＲ三维理论模型中，样品侧面绝热的假设条件在低调制频率下产生误差，必须进行修正．