Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

ABX3型钙钛矿光伏材料的结构与性质调控

近年来,钙钛矿太阳能电池由于其效率高、制造成本低、工艺简单等特点受到广泛关注,成为目前太阳能电池领域的研究热点。在钙钛矿太阳能电池中,无机-有机杂化ABX₃材料非常重要。它既作为光吸收材料,同时又作为载流子传输材料,因此它的光电性质直接影响到太阳能电池的效率。本文综述了调控无机有机金属卤化物ABX₃型钙钛矿光伏材料结构和性质的几种途径。     

锂掺杂提高硫氰酸亚铜的电学特性及在钙钛矿太阳电池中的应用

高效钙钛矿太阳电池中通常采用有机p型半导体材料作为空穴传输层.有机材料在湿度、温度、紫外照射等环境因素下会出现严重的性能衰退,加速钙钛矿太阳电池的老化,成为实现其实际应用的主要障碍之一.本文提出采用无机硫氢酸亚铜(CuSCN)作为空穴传输材料,并通过锂掺杂提高其空穴传输特性;在此基础上采用聚[双(4苯基)(2,4,6-三甲基苯基)胺]修饰CuSCN表面,避免CuSCN和碘化铅(PbI₂)间的相互作用,实现了大晶粒、致密钙钛矿薄膜的制备,最终实现了钙钛矿太阳电池性能的有效提升.本工作为稳定、高效钙钛矿太阳电池的制备提供了可借鉴的策略.     

平面硅异质结太阳电池的光吸收增强的研究

钙钛矿/硅叠层太阳电池可以充分利用太阳光谱,提高光电转换效率.平面硅异质结太阳电池可以作为叠层电池的底电池,其性能直接影响叠层电池的性能表现.采用传统反应热蒸发技术,在低温(170 ℃)条件下制备了掺锡氧化铟薄膜,并在170 ℃的氧气氛围下后退火处理,对ITO薄膜的特性进行了详细的表征和分析.结果表明:后退火工艺改善了ITO的结晶特性,使得材料的光学特性和电学特性得到明显提高,将其应用于平面硅异质结太阳电池,短路电流密度得到极大提高,尤其红外光响应改善明显.引入MgF2薄膜作为减反射层,进一步增强了电池的光响应,转换效率达到19.04;.     

天津市地震应急响应系统简介

天津市地震应急响应系统是在抗震救灾应急指挥技术系统平台的基础上通过强震动触发响应系统、区域地震遥感信息分析与处理系统以及区县地震应急联动指挥平台三大系统的补充建设,以进一步完善区域地震应急指挥技术系统功能实现应急响应能力的整体提升。     

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I~TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.     

谈散文的创作心境

本就现代创作理论和传统创作理论的契合，来论证散的最佳心境。认为散家经过长期的生活积淀，从“行于所当行”有所感的触发开始，经历“止于所不可止”的静心运思的过程，达到“有所不能自己”的创作境界。以此来探讨散的创新和突破。     

衬底温度对MOCVD法沉积ZnO透明导电薄膜的影响

研究了衬底温度对MOCVD技术制备的ZnO薄膜的微观结构和光电特性影响. XRD和SEM的研究结果表明，衬底温度对ZnO薄膜的微观结构有显著影响，明显的形貌转变温度大约发生在175℃，低于175℃，薄膜呈镜面结构，晶粒为球状，高于177℃的较高温度范围，薄膜从“类金字塔”状的绒面结构演化为“岩石”状显微组织；随着温度增加，薄膜的晶粒尺寸明显增大.绒面结构的未掺杂ZnO薄膜具有17.96 cm²/V·s的高迁移率和3.28×10^-2 Ω·cm的低电阻率，对ZnO薄膜的进一步掺杂和结构优化有望应用于Si薄膜太阳电池的前电极. 关键词： MOCVD ZnO薄膜 透明导电氧化物 太阳电池     

对于做好水土保持宣传工作的思考

水土保持宣传工作是做好水土保持工作的重要组成部分。在新的历史时期,做好水土保持宣传工作意义尤为重大。本文就做好水土保持工作提出了六个方面的建议。     

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.