一种催化动力学光度法测定铅的新方法

本文基于盐酸介质中 ,在活化剂氨三乙酸存在下 ,铅 (Ⅱ )催化过氧化氢氧化罗丹明B的新的指示反应体系 ,建立了一种灵敏度高的测定痕量铅 (Ⅱ )的新方法 ,其检测限为 1.45× 10 -10 g/mL ,线性范围 0～ 40ng/mL .用于生物样品及河水样品的测定 ,结果满意     

Effect of polyacrylamide on morphology and electromagnetic properties of chrysanthemum-like ZnO particles

Through hydrothermal process, the chrysanthemum-like ZnO particles are prepared with zinc acetate dihydrate (Zn(CH₃COO)₂\cdot 2H₂O) and sodium hydroxide (NaOH) used as main resources under the different concentrations of surfactant polyacrylamide (PAM). The microstructure, morphology and the electromagnetic properties of the as-prepared products are characterized by high-resolution transmission electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM) and microwave vector network analyzer, respectively. The experimental results indicate that the as-prepared products are ZnO single crystalline with hexagona wurtzite structure, that the values of slenderness ratio L_d are different in different PAM concentrations, and that the good magnetic loss property is found in the ZnO products, and the average magnetic loss tangent tanδ_u increases with PAM concentration increasing, while the dielectric loss tangent tanδ _e decreases.     

nc-Si∶H薄膜的制备及特性表征

利用等离子体化学气相沉积技术制备纳米硅(nc-Si∶H)薄膜材料,并用X射线衍射仪(XRD)、原子力显微镜(AFM)、Raman光谱仪对成膜的状态进行了表征。用红外吸收光谱仪对不同工艺薄膜的结构进行了分析,研究了偏压对薄膜结构的影响,为纳米硅薄膜在光电子方面的应用提供可靠的依据。     

Zn1-xMgxO和Zn1-xMnxO薄膜的制备及其发光性能

采用溶胶-凝胶技术,在Si(110)衬底上制备了Mg、Mn掺杂外延生长的Zn_1-xMg_xO和Zn_1-xMn_xO薄膜,通过XRD、AFM、PL等考察不同杂质浓度对薄膜结晶质量和发光性能的影响。结果表明:Zn_1-xMg_xO和Zn_1-xMn_xO薄膜均具有较高的T_c(002)结构系数和较为光滑、平整的表面形貌。掺杂使得薄膜的紫外发光峰向短波方向移动至365 nm左右,同时Zn_1-xMn_xO薄膜的室温可见光发射得以有效地钝化,使其近带边紫外光发射与深能级可见光发射比例高达56,极大地提高了薄膜紫外发光性能。并对掺杂薄膜紫外发光蓝移和Zn_1-xMn_xO薄膜室温可见光发射的猝灭机理进行了深入探讨,得出掺杂组分为Zn_0.85Mg_0.15O、Zn_0.97Mn_0.03O时,薄膜具有最强的紫外光发射性能。     

一种新型谐波抑制负载结构的整流电路

为了满足5G大环境下的低功耗物联网节点应用,设计了一种新型谐波抑制负载结构的整流电路,在二极管后引入连续多阶微带谐波抑制结构,从而实现较高的转换效率和较小的输出纹波.该电路结构紧凑、设计成本低、结构简单,当输入功率为14.8 dBm时,电路的转换率可达72.5％.最后选择F4B基板进行实验验证,结果表明当负载为750 Ω时,该电路结构的最高转换效率仍可以达到61.2％,相比于其他结构有明显的提高.     

CL-TWE Mach–Zehnder electro-optic modulator based on InP-MQW optical waveguides

In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE) Mach–Zehnder modulator(MZM) based on InP-based multiple quantum well(MQW)optical waveguides. The device configuration mainly includes an optical Mach–Zehnder interferometer, a direct current electrode, two phase electrodes, and a CL-TWE consisting of a U electrode and an I electrode. The modulator was fabricated on a 3 in. InP epitaxial wafer by standard photolithography, inductively coupled plasma dry etching, wet etching, electroplating, etc. Measurement results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz, a V_π of 3 V, and an extinction ratio of about 20 dB.