一种基于窄带自相关的实信号频率估计算法

单频含噪实正弦信号的自相关函数和其原信号的频率一致,且自相关可去除一部分噪声影响,因此基于自相关的频率估计算法一直备受关注。由于自相关可以从时域获得也可以从频域获得,基于自相关的频率估计算法有比较简单的基于时域的方法和性能比较好的基于频域的算法。结合时域和频域自相关的特点,提出一种基于窄带自相关的实信号频率估计算法,该算法在频域进行谱峰搜索后,利用信号的窄带功率谱来计算自相关,进而用简单的时域自相关的改进协方差算法(modified covariance,MC)来得到频率估计,推导出频率估计闭式解。仿真结果表明该算法性能优于传统的自相关时域算法和频域算法,在信噪比高于-7 dB时就能逼近CRB界。     

加权p-Laplace方程解的整体分叉问题

该文利用指标理论，谱理论以及标准分叉定理，研究了加权索伯列夫空间中的p Laplace方程初值问题的解的整体分叉现象。     

部队经济安全管理工作浅析

部队经济安全管理工作对于预防经济安全问题、提高经费使用效益、促进部队现代化建设等具有十分重要的作用。近年来,随着上级资金投入力度不断增大,各单位资金增多,经济安全管理工作面临着极大的考验。本文通过分析部队经济安全管理的要求、部队经济安全管理工作的特点,以及当前部队经济安全管理工作存在的问题,提出从提高经济管理水平、加大监督力度、加强财务队伍建设等方面解决部队经济安全管理问题。     

Fast lateral photovoltaic effect in ferroelectric LiNbO_3 single crystals

We report the fast lateral photovoltaic effect in pure congruent LiNbO3 crystal induced by pulsed laser and continuous wave laser with wavelengths of 355, 532, and 1064 nm. A typical ultrafast photovoltage can be observed on the surface perpendicular to the c axis, With the rise time of 1.5 ns and the full-width at half-maximum of 1-2 ns, when the laser pulse inhomogeneously irradiates on the crystal. The peak open-circuit photovoltages show a linear dependence on the incident laser intensities. The mechanism of the photovoltaic characteristics is proposed.     

Attosecond laser station

The attosecond laser station(ALS) at the Synergetic Extreme Condition User Facility(SECUF) is a sophisticated and user-friendly platform for the investigation of the electron dynamics in atoms, molecules, and condensed matter on timescales ranging from tens of femtoseconds to tens of attoseconds. Short and tunable coherent extreme-ultraviolet(XUV)light sources based on high-order harmonic generation in atomic gases are being developed to drive a variety of endstations for inspecting and controlling ultrafast electron dynamics in real time. The combination of such light sources and end-stations offers a route to investigate fundamental physical processes in atoms, molecules, and condensed matter. The ALS consists of four beamlines, each containing a light source designed specifically for application experiments that will be performed in its own end-station. The first beamline will produce broadband XUV light for attosecond photoelectron spectroscopy and attosecond transient absorption spectroscopy. It is also capable of performing attosecond streaking to characterize isolated attosecond pulses and will allow studies on the electron dynamics in atoms, moleculars, and condensed matter. The second XUV beamline will produce narrowband femtosecond XUV pulses for time-resolved and angle-resolved photoelectron spectroscopy, to study the electronic dynamics on the timescale of fundamental correlations and interactions in solids, especially in superconductors and topological insulators. The third beamline will produce broadband XUV pulses for attosecond coincidence spectroscopy in a cold-target recoil-ion momentum spectrometer, to study the ultrafast dynamics and reactions in atomic and molecular systems. The last beamline produces broadband attosecond XUV pulses designed for time-resolved photoemission electron microscopy, to study the ultrafast dynamics of plasmons in nanostructures and the surfaces of solid materials with high temporal and spatial resolutions simultaneously. The main object of the ALS is to provide domestic and international scientists with unique tools to study fundamental processes in physics, chemistry,biology, and material sciences with ultrafast temporal resolutions on the atomic scale.     

Enhancement of isolated attosecond pulse generation by using long gas medium

Isolated attosecond pulse generation in argon is theoretically investigated for different gas pressures and medium lengths. The output of attosecond pulse is effectively enhanced by using a longer gas medium with optimized pressure. The peak intensity of the attosecond pulse by using 6 mm gas medium is doubled compared with that of 1-3 mm gas cell, which is usually used in the experiment. Our simulation shows that the distortion of the driving laser waveform and the absorption are the main factors that limit the output of the attosecond pulse for the long gas medium. Optimized generation condition could be found by balancing the medium length and pressure.     

食用香料的太赫兹时域光谱

食用香料是人们在烹饪过程中必不可少的调味品,对食用香料的鉴别和食用安全性检测也尤为重要.本文利用太赫兹时域光谱技术对食用香料进行测试,得到了黑胡椒、白胡椒、花椒、大料、姜粉、甘草、香叶以及五香粉、十三香等香料在太赫波段的吸收谱和折射率谱.结果表明,不同种类的香料都有其独特的特征吸收光谱,样品的吸收谱在0.2～1.25THz频段内以不同的斜率单调递增,在1.25～2.0THz频段呈现出不同的吸收峰.样品的折射率值在1.3～1.8之间变化,并且,样品的折射率在其吸收峰所对应的频率处出现了反常色散.通过对吸收系数的斜率、峰值位置以及折射率进行定标分析,太赫兹时域光谱技术可以用于不同种香料的定性检测.实验数据为食用香料的鉴别提供了依据,可以用于建立食用香料的太赫兹波谱数据库.     

Simulation of Anisotropic Resistivity for Mixed-Phase Manganite La2／3Ca1／3MnO3 Thin Films

We utilize the random network model based on phase separation scenario to simulate the conductive behaviour and anisotropic characteristics of resistivity for La2/3Ca1/3MnO3 (LCMO) thin films. The simulated results agree well with our experimental data, showing a metal-to-insulator transition from a high-T paramagnetic (PM) insulating phase to a low-T ferromagnetic (FM) metallic phase in both the untilted film deposited on a (001) SrTiO3 (STO) substrate and the tilted film grown on a vicinal cut STO substrate. It is found that the resistivity of the tilted sample is higher than that of the untilted one, displaying prominent anisotropic characteristics. The studies reveal that the tilting not only decreases the conduction of the FM domains, but also increases the activation energy of the PM regions, inducing the enhancement of resistivity. All those results suggest that the intrinsic inhomogeneity in the phase separation system plays a significant role in the electrical conductivity and the resistive anisotropy is related to the structure of the crystal lattice.     

La0．67Ca0．33MnO3／La0．67Sr0．33CoO3／La0．67Ca0．33MnO3三层薄膜中的磁性耦合

研究了对靶溅射技术制备的La0．67Ca0．33MnO3／La0．67Sr0．33CoO3／La0．67Ca0．33MnO3三层薄膜中的磁输运特性。由于La0．67Sr0．33CoO3层的电阻短路效应，三层膜的磁阻随中间层厚度的增加而迅速减小。与La0．67Ca0．33MnO3单层膜不同，三层膜显示出增强的金属-绝缘体转变温度(TMS)。在230K时，系统的矫顽力Hc随中间层厚度非单调地变化，磁滞回线的形状表明了两层La0．67Ca0．33MnO3之间存在着磁性耦合。     

用激光分子束外延在Si衬底上外延生长La1-xSrxMnO3单晶薄膜

采用SrO和SrTiO3作为缓冲层, 用激光分子束外延在Si (100)衬底上成功地外延生长出La_1-xSr_xMnO₃ (x=0.1, 0.2, 0.3) (LSMO)单晶薄膜. 锐而清晰的反射式高能电子衍射仪 (RHEED)的衍射条纹和持久的RHEED强度振荡, 表明LSMO薄膜是很好的二维层状外延生长. X射线衍射和高分辨透射电镜分析结果证明, 在Si基底上获得了很好外延生长的LSMO薄膜, LSMO薄膜为C取向的单晶薄膜. 并在室温条件下观测到很好的LSMO/Si p-n结I-V整流特性.