反应磁控溅射制备TiO2和Nb2O5混合光学薄膜

利用反应磁控溅射技术在BK-7基片上制备了二氧化钛和五氧化二铌均匀混合的光学薄膜.薄膜的内部微结构、表面形貌、化学成分比例以及光学性质等用X射线衍射、高分辨扫描电子显微镜、原子力显微镜、X射线光电子能谱和紫外可见近红外分光光度计进行研究;发现制备的薄膜为非晶结构,薄膜的表面平整、内部结构致密,不存在柱状结构或结晶颗粒的缺陷,TiO2与Nb2O5的成分比例大致是1∶1.54.从光学透射光谱计算的折射率和消光系数显示,在550 nm波长处的折射率为2.34,消光系数为2.0×10－4.结果表明制备的薄膜是TiO2和Nb2O5均匀混合的高质量光学薄膜.     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

石墨型高能两电极气体开关

 为大型激光装置能源模块研制了一种采用石墨电极的两电极气体开关,阐述了石墨应用于高能两电极气体开关的技术关键,对气体开关中气体间隙的最优结构进行了电场强度分析。参考美国国家点火装置(NIF)能源模块中ST-300气体开关的已知参数,对研制成功的石墨型两电极开关进行了电气特性试验,证明了石墨型气体开关能够实现峰值电流达300 kA以上,单次转移电荷量100 C以上,寿命超过1 000次,满足1.2 MJ大型激光装置能源模块的工程技术要求。     

刍议《新闻联播》的“字正腔圆”

中央电视台的《新闻联播》从1978年元旦正式开播以来，以每天相对固定的对党和国家领导人的政治活动及国内重要会议、各行业进展和国内外重大事件的“全景式扫描”，实践着“发布新闻，传达政令，介绍各条战线的新成就、新发明、新创造，宣传各地涌现的先进人物和创造的先进经验，报道发生在世界各地的重大新闻事件”的宣传意图，是国内目前覆盖率和收视率最高、影响力最大的电视新闻栏目。     

村级经济责任审计存在的问题及建议

近年来,审计机关不断拓宽经济责任审计的覆盖,从已经普及至县、乡镇一级,又延伸至加强对村干部参与农村经济活动的监督与约束上,积极推行村级领导干部经济责任审计,取得了明显成效。但审计中发现的问题,需引起重视并加以解决。     

浅谈ADS-B在进近排序中的应用

以遂宁机场进近管制,在ADS-B监视下的实际指挥经验。参照现有运行标准,通过分析训练飞行的特点,结合学院训练飞行实际情况,给出合理的ADS-B监视下的进近排序判断选择和排序方法。     

新个税法对调节收入分配的影响

个人所得税是现代政府组织财政收入、调节收入分配的重要手段。我国1980年开始征收个人所得税,2011年9月1日起实施新个税法。新个税法大幅度减轻了中低收入纳税群体的负担,顺应了时势和民意。但是,由于现行个税制度自身的缺陷以及个税在税收结构中的比重偏低,其调节收入分配差距的功能仍十分弱小。因此,必须加快个税制度改革,完善个税调节功能,使其真正发挥在构建公平收入分配关系中的重要作用。     

基于Honeyd的产品型蜜罐系统

在研究型蜜罐技术的基础上,分析了产品型蜜罐所应具备的基本特性,设计并实现了一个基于Honeyd的产品型蜜罐系统.系统应用了公钥加密、图形化操作等技术,具有较高的安全性和实用性.     

如何提高理论力学的教学质量和学习兴趣

根据多年的理论力学课程教学实践,发现学生在理论力学的学习过程中,普遍缺乏学习兴趣,主要原因是理论力学理论好懂、习题难做。本文对此进行了详细探讨,分析降低学生学习兴趣的原因,并关于如何提高理论力学教学质量和学习兴趣提出了几点看法,有助于提高理论力学的教学水平。