膜层厚度对蓝宝石衬底上生长的ITO薄膜性质的影响

采用磁控溅射的方法在蓝宝石衬底上制备了氧化铟锡(ITO)透明氧化物薄膜;研究了不同厚度薄膜的结构、光学和电学特性。经X射线衍射(XRD)测量,发现在蓝宝石衬底上生长的ITO薄膜呈现了较高的(222)择优取向;随着膜层厚度的增加,该衍射峰对应的2θ衍射角逐渐向大角度方向移动,同时该衍射峰的半峰全宽逐渐减小,平均晶粒尺寸增大。 经光学透射光谱测量,发现随着膜层厚度的增加,光学透过率逐渐减小。膜层厚度为0.2 μm时,可见光透过率超过80%,当膜层厚度为0.8 μm时,可见光透过率下降到60%。电学测量结果表明,随着膜层厚度的增加,薄膜电阻率逐渐减小。膜层厚度为0.2 μm时,电阻率为9×10^-4 Ω·cm, 膜层厚度为0.8 μm时,电阻率为5.5×10^-4 Ω·cm。     

塑料光纤微分模延迟的频域相移法研究

塑料光纤的微分模延迟数据对研究塑料光纤的色散特性具有非常重要的意义。采用频域相移法测量了不同长度的两种折射率分布塑料光纤：阶跃型塑料光纤(SI—POF)和渐变型塑料光纤(GI—POF)的微分模延迟曲线。实验结果表明,由于短光纤可以忽略模式耦合和模式损耗,1m塑料光纤的微分模延迟测量值与理论计算值吻合得非常好。因此,频域相移法可以简单、方便、精确地测量塑料光纤的微分模延迟。此外,通过比较不同长度塑料光纤的微分模延迟曲线的变化,可在一定程度上分析光纤中存在的模式耦合。     

直流电路中动态变化问题的分析方法

在直流电路中，由于滑动变阻器滑片的移动，或者由于电键的接通与断开，或者由于某一用电器的突然烧坏等因素，导致电路中的总电阻发生变化，从而使电路中的电流、电压和电功率等物理量随之变化，这类问题叫做电路动态变化问题，它是直流电路中最常见的一种题型。     

抓能量主线 解高考难题

能量的转化和守恒定律是自然界中最基本、最普遍的规律之一，以能量的角度分析和解决物理问题是中学物理中最重要的解题切入点．为此，在历年高考中，能量这条主线总是被命题者所青睐和重视，经常会出现有关能量变化的妙题．解决这类问题应把握以下几点。     

Improvement of Properties of p-GaN by Mg Delta Doping

The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition.The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.     

Compression of Soliton Pairs in Dispersion-Decreasing Fibres

The compression of soliton pairs in fibres with decreasing dispersion is studied. The results show that generation of high-quality stable pedestal-free pulses is strongly affected by the interaction between soliton pairs. The initial phase difference between two solitons can modify soliton interaction and can make the neighbouring solitons never collide periodically. The soliton pairs can be compressed selectively so that one of the two solitons can achieve enhanced compression by controlling the initial phase difference.     

Effect of nonstoichiometry on Raman scattering of VO2 films

We report on Raman scattering of VO2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO2 films, compared with the stoichiometry VO2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO2 films is discussed.     

原子物理学的学术战略地位与素质教育中的作用

探讨了原子物理学在现代科学技术中的学术战略地位以及素质教育中的重要作用，指出了在科教兴国、大力发展高科技的今天，原子物理学的教学只能加强、不能削弱。     

Cluster synchronization in a network of non-identical dynamic systems

Cluster synchronization in a network of non-identical dynamic systems is studied in this paper, using two-cluster synchronization for detailed analysis and discussion. The results show that the common intercluster coupling condition is not always needed for the diffusively coupled network. Several sufficient conditions are obtained by using the Schur unitary triangularization theorem, which extends previous results. Some numerical examples are presented for illustration.     

Mn-Cu合金成分对去合金化法制备纳米多孔铜的影响

 采用电弧熔炼制备出前驱体Mn-Cu合金,在稀盐酸溶液中自由腐蚀去合金化,制备出具有双连续结构的纳米多孔铜。研究了前驱体合金的成分对纳米多孔铜微观结构及Mn的选择性腐蚀程度的影响。结果表明：前驱体Mn-Cu合金的Cu原子分数为43%时,其去合金化受到抑制,存在明显的未完全去合金化的岛状结构;前驱体Mn-Cu合金的Cu原子分数为32%～23%时,可完全去合金化,形成平均孔径尺寸为20～100 nm,平均系带尺寸为30～80 nm,具有双连续结构的纳米多孔铜;前驱体Mn-Cu合金的Cu原子分数低至20%时,去合金化后存在大量裂纹,形成纳米颗粒聚集体。纳米多孔铜中存在少量的残余Mn,残余Mn的原子分数随着前驱体合金Mn原子分数的增高而降低。实验表明腐蚀液浓度对纳米多孔铜形貌也存在影响。