低温油封冷却器折流板开孔性能机理研究

针对管壳式换热器折流板背部存在流动死区的问题,以低温油封冷却器为研究对象,采用计算流体动力学技术对低温油封冷却器折流板开孔后的整体性能进行机理研究.研究结果表明:折流板背部存在大量的旋涡是导致流动死区的直接原因,折流板开孔后能够形成垂直于折流板的射流,对流动死区有明显改善作用。折流板开孔后,壳程压降有较大的降幅,同时传热系数也有降低,但降低幅度远远小于降低幅度。在等换热面积和等压降情况下,折流板开孔冷却器传热系数可以提高10%.     

CO_2激光光栅式扫描修复熔石英表面缺陷的实验研究与数值模拟

基于熔石英材料对波长为10.6μm的CO2激光具有强吸收作用这一特点,提出采用CO2激光光栅式多次扫描修复熔石英光学元件表面密集分布的划痕和抛光点等缺陷的方法.实验结果表明,在合理的扫描参数下,元件表面的划痕和抛光点等缺陷可被充分地消除.损伤阈值测试结果表明,表面划痕和抛光点等缺陷被完全消除的元件的损伤阈值可回复到或超过基底的损伤阈值.同时结合有限元软件Ansys的模拟结果分析了CO2激光扫描修复及消除元件表面划痕和抛光点等缺陷的过程.本文为消除元件表面划痕和抛光点等缺陷提供了非常有意义的参考.     

Z箍缩Al等离子体X辐射谱线的分离及电子温度的提取

以"强光一号"Z箍缩装置10174发次光谱诊断实验结果为例,描述了一种对Z箍缩等离子体X辐射光谱分离提纯、诊断的方法.对连续辐射谱和特征辐射线谱进行分离,并从连续辐射谱和特征辐射线谱中提取了等离子体电子温度信息.结果显示:等离子体连续谱主要由等离子体中心的高温区(Te=290.7 eV±1.2 eV)和温度较低的壳层区域(Te=95.3 eV±8.3 eV)两部分叠加而成;特征辐射线谱主要反映了等离子体中心的高温区信息,根据非局域热动平衡模型计算提取的电子温度约为299—313 eV,与连续谱诊断结果基本符合.     

First-principles study of stability of point defects and their effects on electronic properties of GaAs/AlGaAs superlattice

When the GaAs/AlGaAs superlattice-based devices are used under irradiation environments, point defects may be created and ultimately deteriorate their electronic and transport properties. Thus, understanding the properties of point defects like vacancies and interstitials is essential for the successful application of semiconductor materials. In the present study, first-principles calculations are carried out to explore the stability of point defects in GaAs/Al_0.5Ga_0.5As superlattice and their effects on electronic properties. The results show that the interstitial defects and Frenkel pair defects are relatively difficult to form, while the antisite defects are favorably created generally. Besides, the existence of point defects generally modifies the electronic structure of GaAs/Al_0.5Ga_0.5As superlattice significantly, and most of the defective SL structures possess metallic characteristics. Considering the stability of point defects and carrier mobility of defective states, we propose an effective strategy that Al_As, Ga_As, and Al_Ga antisite defects are introduced to improve the hole or electron mobility of GaAs/Al_0.5Ga_0.5As superlattice. The obtained results will contribute to the understanding of the radiation damage effects of the GaAs/AlGaAs superlattice, and provide a guidance for designing highly stable and durable semiconductor superlattice-based electronics and optoelectronics for extreme environment applications.     

One- and two-photon absorption-amplification response in a four-level atomic system with vacuum-induced coherence

This paper theoretically studies the effects of the vacuum-induced coherence on one- and two-photon absorption in a four-level atomic medium. It finds that the one- and two-photon absorption and amplification properties are quite sensitive to the vacuum-induced coherence. It is also shown that the one- and two-photon absorption spectra can be dramatically affected by modulating the relative phase of the applied fields. With the proper choice of the relative phase, the amplification without inversion for the probe field can be realized.     

梯度膜作为高功率激光反射膜的初步研究

 对渐变折射率薄膜替代均匀膜系作为高功率激光反射膜的可行性进行了理论研究。以较容易获得的线性共蒸法制备的光学膜在中心波长为1 064 nm的激光作用为例,分析了薄膜与基体之间波长的匹配、场强分布等问题。提出了通过改变微小单元获得梯度膜匹配厚度的数值方法,将之运用在14个周期结构的梯度膜中,并由膜系计算软件验证了所获得结果。最后通过分析Maxwell方程,计算了梯度膜中与薄膜损伤密切相关的电场强度分布。结果表明：周期性结构梯度高反射膜中的电场分布与传统高反射膜具有相似性,但相对于传统高反射膜容易在界面处出现损伤的情形而言,梯度膜更容易在表面出现损伤,使梯度膜表面反射相移接近π是高功率梯度高反射膜的设计方向。     

(Ni0.81Fe0.19)1-xCrx作为种子层对NiFe/FeMn交换偏置的影响

采用一种新的种子层材料:(Ni081Fe019)1-xCrx,通过改变种子层中Cr原子的含量,使得在其上生长的NiFeFeMn双层膜的织构和晶粒尺寸产生极大的差异,系统研究了NiFeFeMn双层膜中FeMn晶粒尺寸和织构对交换偏置的影响.实验结果表明,在FeMn的γ相(111)织构较好的前提下,交换偏置场的大小与织构的差异没有关系;FeMn的晶粒尺寸对交换偏置场有很大影响,较小的反铁磁层晶粒对交换偏置场有利,过大的反铁磁层晶粒不利于交换偏置场.将(Ni081Fe019)05Cr05与传统的种子层材料Ta进 关键词： 交换偏置 晶粒尺寸 织构 种子层     

熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.