Optical Performance of N-Face A1GaN Ultraviolet Light Emitting Diodes

The optical property and injection efficiency of N-face A1GaN based ultraviolet light emitting diodes （UV-LEDs） are studied and compared with Ga-face A1GaN based UV-LEDs. A staircase electron injector is introduced in the N-face AIGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin-orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier. Therefore, the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field. Moreover, we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior. This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.     

采用吸收修正Bronnikov算法的有机复合样品的X射线显微计算机层析研究

有机复合样品如大多数由低原子序数物质构成的多聚物组合材料、生物软组织等具有混合相位和振幅特性,采用传统吸收计算机层析(CT)或纯相位重构算法难以达到较高密度分辨的目的。采用基于吸收修正的Bronnikov相位恢复算法的X射线同轴相衬CT技术对高分子混合组份材料和药物医学样品进行了实验研究。结果表明该相位恢复算法可以实现多聚物组合材料的无损分辨和精确测量,能够清晰辨别各组份材料的电子密度分布;验证了药物样品多孔性结构三维测量的可行性,能够有效提供孔隙测量的阈值选择。该方法在材料科学尤其是聚合物组合材料、泡沫多孔材料都会发挥很好的作用;单距的低辐射优势,尤其适用于生物医学样品三维无损成像。     

近红外光谱技术(NIRS)在牧草领域中的应用研究进展

牧草是草食动物最主要的营养来源。牧草品质的优劣不仅影响家畜的生长发育和生产效率,也决定着最终畜产品的产量与品质。牧草品质的优劣主要取决于牧草营养成分及其消化率、适口性、以及牧草中所含抗营养因子和真菌毒素、霉菌毒素的含量水平。近红外光谱技术(NIRS)是一种低成本、快速、简单、无损的定性、定量分析技术,已在许多领域广泛应用。该文简要介绍了NIRS的原理和特点,详细综述了NIRS在牧草品质分析、牧草育种、牧草品种鉴定和性状分类中的应用。通过较全面综述NIRS在牧草领域中的应用现状,以期有助于NIRS在我国牧草领域中的发展。     

浅谈环境物理学

环境物理学是一门新兴的学科，它包括物理学的各个分支，文章从物理与环境的关系出发，介绍了环境物理学的产生，学科体系以及当前的研究领域。     

单矢量水听器估计目标方位的方法与实验

为评估基于单矢量水听器的方位估计能力,在黄海海域对矢量水听器进行实验。矢量水听器吊放于接收船尾部,采用平均声强器和复声强器方位估计方法,并提出以概率密度值最大的方位角作为目标方位估计值的具体处理准则,对恒定方向、匀速行驶的目标船方位进行估计,并求出两种方法的方位估计误差。结果表明,水听器布放深度10 m时,对正横距离为0.42 km的航速10 kn的目标船,平均声强器方法的水平方位角估计误差18°,极角估计误差为5°,可以在离目标船最远1.17 km处估计其方位;复声强法的水平方位角估计误差为13°,极角估计误差为8°,可以在离目标船最远2.35 km处估计其方位。在有接收船的噪声干扰情况下,复声强器比平均声强器方法估计的方位更准确,可以对更远处的噪声源进行方位估计。     

光子的双波描述

用双波理论描述光子,使光子成为具有定域性的量子粒子.光子的波粒二象性以及圆极化和线极化的二象性在理论中都得到了体现.     

基于纯方位的浅海距离特征量解算分析

目标辐射噪声的LOFAR图中的干涉条纹包含了目标的运动参数和环境信息。当LOFAR图中的干涉条纹模糊或缺失时,其中的目标距离信息将无法提取。对于匀速直线运动的声源目标,仅利用方位信息,通过构造距离特征量和目标方位的关系模型,给出了一种浅海估计距离特征量的补充方法。浅海数值仿真和实验验证表明了该方法的可行性和有效性。     

大规模声学边界元法的GPU并行计算

提出一种大规模声学边界元法的高效率、高精度GPU并行计算方法.基于Burton-Miller边界积分方程,推导适于GPU的并行计算格式并实现了传统边界元法的GPU加速算法.为提高原型算法的效率,研究GPU数据缓存优化方法.由于GPU的双精度浮点运算能力较低,为了降低数值误差,研究基于单精度浮点运算实现的doublesingle精度算法.数值算例表明,改进的算法实现了最高89.8%的GPU使用效率,且数值精度与直接使用双精度数相当,而计算时间仅为其1/28,显存消耗也仅为其一半.该方法可在普通PC机(8GB内存,NVIDIA Ge Force 660 Ti显卡)上快速完成自由度超过300万的大规模声学边界元分析,计算速度和内存消耗均优于快速边界元法.