杜仲对土壤营养元素的富集能力初探

对杜仲各器官营养元素含量及其对土壤各营养元素的富集能力进行了初步探索。结果显示，各元素在杜仲各器官中的含量均有差异，杜仲林系统与土壤系统中各元素含量差异基本一致。但它们的富集能力与土壤各元素含量存在明显差异。     

土石坝水力劈裂

我国现有水库8．7万多座,大型水库的大坝70％以上是土石坝,而中小型水库的大坝90％以上是土石坝。随着施工技术的逐步发展以及大型施工机械的应用,坝高不断增加。在我国,己有多座200m甚至300m以上的高土石坝正在建设或设计论证之中。对低坝,经验比较成熟,而高坝建设中仍有不少问题有待解决,其中水力裂就是一个非常重要的问题。     

基于响应面的液力变矩器叶片优化设计

针对现有变矩器性能分析方法的不足,在液力变矩器三维流场数值模拟的基础上,采用响应面法对叶片进行优化.首先根据变矩器流场模拟结果,并考虑机械损失的影响,计算变矩器效率、变矩比等输出特性;然后以最高效率为优化目标、起动变矩比为约束条件、二阶多项式为响应面函数,采用正交试验法设计试验样本,建立叶片优化模型并进行优化计算.计算...     

Boussinesq方程行波解的存在性

利用平面动力系统方法的分支理论,研究了Boussinesq方程,通过对Boussinesq方程进行行波变换,得到了相应行波系统的首次积分和平衡点,给出了不同参数条件下的相图,证实了Boussinesq方程存在孤立波解和周期波解。     

一种含氟涂料的合成控制

研制开发了以四氟乙烯为主要共聚单体的四元共聚溶剂型涂料.该涂料是在聚合物引入相关的官能团,使得不能溶于溶剂的聚四氟乙烯形成四元共聚体,可形成溶剂型涂料,并在常温下与外加的交联剂交联固化.本文论述了引入不同官能团对四氟涂料性能的的作用与影响,并确定合成工艺参数.该涂料的机械性能、耐化学品性、热稳定性、耐候性优异,具有广阔的市场应用前景.     

(6,5)单壁碳纳米管对盐酸阿霉素的载药研究

以分离后的单壁碳纳米管为载药工具,制备了一种(6,5)单壁碳纳米管-盐酸阿霉素-人血清白蛋白-叶酸((6,5)SWCNT-Dox-HSA-FA)四元靶向载药系统.首先通过反应制备得到三元复合物Dox-HSA-FA,并采用双水相萃取法分离得到(6,5)SWCNT;然后采用超声作用将(6,5)SWCNT分散至Dox-HSA...     

重金属联合毒性对蚤类与鱼类敏感性的影响及预测模型研究进展

通过阅读文献了解各类重金属在联合作用情况下对水生生物产生的毒性效应并讨论了联合毒性的作用机制.研究了水环境中重金属污染对水生生物的敏感性影响,介绍了联合毒性作用的具体表现形式,总结了包括蚤类、鱼类等常见水生生物的收集与培养、联合毒性实验的具体步骤与结果讨论,对联合毒性的两种基本模型原理与预测结果进行了阐述.结果表明,水...     

苔藓植物护坡及固土作用试验研究

以兰州市榆中县夏官营古城的苔藓坡面为研究对象,通过野外调查,研究苔藓的生长环境特征.选择有代表性的自然坡面进行风蚀、雨蚀实验,研究苔藓坡面的抗风蚀、雨蚀能力.取当地的原状土样进行室内土工实验研究其强度特征.结果表明:苔藓能显著提高黄土坡面的抗风蚀、雨蚀能力和抗剪强度.苔藓覆盖度越大,抗风蚀、雨蚀能力越强.相比较无苔藓的坡面,苔藓覆盖度达到40%时,抗风蚀能力可提高2～3倍,抗雨蚀能力可提高3～4倍,苔藓覆盖度超过40%后,抗风蚀、雨蚀能力提高幅度会下降.随着苔藓覆盖度增大,原状土样的内聚力显著增大,抗剪强度整体增大.     

基于神经网络在线学习的脱硝系统入口氮氧化物预测

针对脱硝系统入口氮氧化物静态软测量预测模型不能满足变负荷时需求的问题,建立了一种基于神经网络在线学习的软测量模型.利用粒子群算法对静态神经网络的参数进行寻优,结合预报误差和当前预测误差的大小在线更新网络的权值、阈值和学习速率,可以满足不同负荷下的需求,利用电厂的实际运行数据对模型进行了验证.结果表明:在不同负荷下,建立的神经网络在线学习模型的准确性高,实时性好,泛化能力强,可以很好地对入口氮氧化物进行预测,为脱硝系统入口氮氧化物在线测量和监测提供了一种有效的方法.     

铝、铜、镍三元合金系中τ相的晶体结构变迁

A thorough investigation by means of X-rays has been carried out with the purpose to determine the nature of the ternary phase τ in Al-Cu-Ni alloys. In contrast with the conventional concept of alloy phase which is characterized by a definite type of crystal structure, systematic structure changes are found in the single phase field of τ which occupies quite an extensive area in the isothermal section of the phase diagram at room temperature. There are eight types of structures altogether, all derived from a basic rhombohedron with corners occupied by Al atoms and centres either occupied by the heavy atoms or remaining vacant. The basic rhombohedron is the building stone in the crystal architecture. By transforming the basic rhombohedron into a hexagonal prism in the usual way, all structures may be considered to be built up by stacking together a number of these hexagonal prisms along the triad. The transformation of one structure into another is quite systematic in the way that the number of the stacking stories in the unit cell increases according to the order 10, 11, 12, 13, 14, 15, 16, 17. The atomic arrangements in the different structures are closely related too, in the respect that they are all superstructures due to the presence of ordered vacancies in the rhombohedral centres.The principal factor controlling the formation of these structures has been fully considered. In view of the fact that the change of structure types follows closely with the content of Ni or Cu for alloys of constant Al content, the atomic size factor appears to be unimportant in the formation of these alloys. It has been shown that for alloy phases of the defect lattice type as the r-phase, the most fundamental factor is the average number of valency electrons per structural unit which is the basic rhombohedron in the present case. By assuming Hume-Rothery's valencies, the average number of valency electrons remains remarkably constant throughout the entire phase field, while the electron concentration varies with compositions. It has also been pointed out that for alloy phases where there is no unit cell change, the average number of electrons per structural unit is equivalent to the number of electrons per unit cell, and for alloy phase where there is no defect, this is in effect equivalent to the electron concentration.