环形非圆截面等离子体自由界面的磁流体平衡方程解

在有导体壁的条件下,对于各种趋肤的及趋中心分布的等离子体纵向电流,用一种统一的迭代方法,计算了相应的自由界面的磁流体平衡方程解,并讨论了这种方法适用的范围。 关键词：     

关于（e+e-）,（μ+μ-）原子在库仑场的裂解

本文应用了复合粒子场论的微扰展开理论和自旋为（1/2-1/2）的库仑相互作用原子的Bethe-Salpeter协变波函数的近似解,计算了（e⁺e^-）（μ⁺μ^-）原子的高速飞行下裂解截面及能谱。结果表明（e⁺e^-）原子的裂解截面比前人的计算约小20％。此外,计算还表明（e⁺e^-）及（μ⁺μ^-）原子的单态和三重态裂解截面对任意主量子数n,和极端相对论近似下将精确相等,而前人的计算中只是n=2时才有这一结果,而对n=1时,两者相差约有25％。看来很可能是计算中的错误所致。     

发散冷却叶片槽道内流动和传热的理论分析与试验

本文对发散冷却叶片槽道内气体的流动和传热作了理论分析,导出了有关的数学表达式,比较全面地考虑了影响槽道内热力参数改变的各种因素。试验表明:(1)在槽道内控流孔附近,已经不是一元流动,计算中引入修正是十分必要的;(2)按紊流管内放热强度的五倍来描述槽道内冷气与蒙皮间的放热已不适宜。文中的计算公式为叶片总体传热设计提供了方便。文中列出的试验数据可供设计同型发散叶片用。     

Study on the approximative formula for the far-field of a Gaussian beam under circular aperture diffraction and its divergence

The approximative formula for the far-field diffraction of a Gaussian beam through a circular aperture is obtained by using the superposition of Gaussian beams instead of the aperture function, and the explicit expression for calculating the beam divergence is also gained. Using the formula, the influences of the aberrations on the far-field wavefront and the beam's divergence are researched, and the results show that the large aberrations badly affect the far-field wavefront and the divergence. It is suggested that the aberrations and the diffractions should be avoided when designing the transmitter.     

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using computer-aided design three-dimensional simulation technology,the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated.It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing,which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design.Additionally,the effect of supply voltage on charge collection is also investigated.It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor(BJT) and the existence of the source plays an important role in supply voltage variation.     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

Structural and optical investigation of nonpolar α-plane GaN grown by metalben organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Nonpolar (1120) α-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1102) sapphire. The samples are irradiated with neutrons under a dose of 1 × 10¹⁵ cm^-2. The surface morphology, the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The AFM result shows deteriorated sample surface after the irradiation. Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction. Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample, indicating that more point defects appear in the irradiated sample. The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results. The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.     

空间激光通信最新进展与发展趋势

空间激光通信凭借其带宽优势,成为未来高速空间通信不可或缺的有效手段,是近年来国际上的研究热点。本文详细介绍了美国、欧洲和日本在空间激光通信技术领域的最新研究进展和未来发展规划,总结了国内外空间激光通信演示计划的主要参数指标。通过对空间激光通信最新研究计划的分析,归纳出空间激光通信高速化、深空化、集成化、网络化、一体化5个发展趋势,以及需要突破的高阶调制、高灵敏度探测、多制式兼容、"一对多"通信等关键技术。为我国激光通信设备及相关研究提供借鉴和参考。     

LED用La2(WO4)3:Eu3+红色荧光粉合成及光谱性能

采用水热法并进行热处理成功合成了Eu3+掺杂La2(WO4)3红色荧光粉,通过粉末X射线衍射、扫描电子显微镜,以及能谱来表征荧光粉的晶体结构、颗粒大小、形貌及成分;用激发光谱和发射光谱以及荧光衰减曲线来表征荧光粉的荧光性能.X射线衍射分析确认了水热的前驱体和后期热处理的样品主要相分别为三斜晶系的La2W2O9和单斜晶系...     

The modulation effect of substrate doping on multi-node charge collection and single-event transient propagation in 90-nm bulk complementary metal-oxide semiconductor technology

Variation of substrate background doping will affect the charge collection of active and passive MOSFETs in complementary metal-oxide semiconductor (CMOS) technologies, which are significant for charge sharing, thus affecting the propagated single event transient pulsewidths in circuits. The trends of charge collected by the drain of a positive channel metal-oxide semiconductor (PMOS) and an N metal-oxide semiconductor (NMOS) are opposite as the substrate doping increases. The PMOS source will inject carriers after strike and the amount of charge injected will increase as the substrate doping increases, whereas the source of the NMOS will mainly collect carriers and the source of the NMOS can also inject electrons when the substrate doping is light enough. Additionally, it indicates that substrate doping mainly affects the bipolar amplification component of a single-event transient current, and has little effect on the drift and diffusion. The change in substrate doping has a much greater effect on PMOS than on NMOS.