三塔以上悬索桥关键力学行为及结构成立特征

为探究三塔以上悬索桥在不同跨径及桥塔数目时的力学行为和成立特征,建立了主跨径为500～1500 m、桥塔数目为3～8的24个悬索桥计算模型,明确了竖向刚度及主缆抗滑的最不利简化布载模式,分析了汽车荷载和温度荷载作用、结构振型基频以及颤振临界风速,探讨了中塔纵向刚度对结构成立特征的影响.结果 表明:单主跨及单侧简化满载可...     

调和α-Bloch函数和调和小α-Bloch函数

用给定的增函数刻画调和α-Bloch函数和调和小α-Bloch函数的特征,它们改进了第二作者早期的一些结果。     

应用于TV Tuner的片上LDO设计

给出了一种应用于电视调谐器(TV Tuner)中的片上低压差线性稳压器(LDO)的设计方案.分别设计了一个瞬态增强型的LDO和一个低噪声高电源抑制比(PSR)的LDO,芯片在0.18μm CMOS工艺下流片,面积分别为0.014mm2与0.045mm2.瞬态增强LDO在负载从0变化到30mA时,输出动态电压变化为100mV;低噪声高PSR LDO 100Hz到100kHz的积分噪声为9.2μV,PSR在1kHz处为-80dB,在1MHz下为-46dB.     

仁用杏SRAP-PCR体系的正交设计优化

改良CTAB法提取仁用杏基因组DNA,用于建立SRAP-PCR体系。采用L16（44）正交设计试验,对影响仁用杏SRAP-PCR反应体系的4因素（dNTPs浓度、Mg^2＋浓度、引物浓度、Taq聚合酶量）4水平进行筛选,PCR结果经统计软件SPSS V13.0分析,并对退火温度进行了摸索,确立了仁用杏SRAP-PCR的优化体系：总体积为20 L,dNTPs浓度为0.2 mmol/L,Mg^2＋浓度为2.5mmol/L,引物浓度为0.9μmol/L,Taq聚合酶量为1.5 U,退火温度为52℃。本优化体系为仁用杏资源遗传分析奠定了技术基础。     

石桥镇一代家庄一带主要矿种找矿模型

本区地层发生过沉积了、构造或两者兼有的混杂作用,由于它们经历了不同的变形变质作用,因而需按非史密斯地层进行野外调查和研究,并在厘清构造格架的基础上对该区主要具代表性矿产成矿地质条件的分析,重新划分了区内矿产的成因类型,提出了同生沉积一改造型层控矿床、沉积一再造型层控矿床、火山热液型层控矿床、岩浆热液型矿床、接触交代（矽卡岩）型矿床、风化淋滤型褐铁矿等六大成因类型。通过对区内矿点、矿化点、各类异常检查评价以及各类资料的综合对比,对区内矿产的控矿地质条件进行了总结,初步建立了该区主要矿种的区域找矿模型。     

Fabrication and Investigation of an Upconversion Quantum-Well-Infrared Photodetector Integrated with a Light-Emitting Diode

We report the fabrication of an upconversion infrared detector, i.e. a quantum well infrared photodetector integrated with a light-emitting diode (named as QWIP-LED). The infrared photo-response spectrum in the upconversion process is in good agreement with the normal photocurrent spectrum of the QWIP, which demonstrates that the long wavelength infrared band at 8μm has been transferred to the near infrared band at 0.8μm by the upconversion process.     

基于Matlab的动态规划顺序算法的实现

运用Matlab编程实现动态规划顺序算法，以实例说明了该实现方法的确性以及实时性的特点，通过对不同问题编制不同的子函数，表明该实现方法具有一定的通用性．     

Low Resistivity C54 Phase TiSi2 Films Synthesized by a Novel Two—Step Method

Synthesis and growth properties of the TiSi2 film on a Si (001) substrate are investigated. A novel two-step method is used for deposition of the C54 phase TiSi2 film with low resistivity. The first step is the formation ofthe C49 phase TiSi2 at a relative low substrate temperature of 400℃, followed by rapid thermal annealing processat 850℃ in N2 for the formation of the C54 phase TiSi2 as the second step. Finally, selective wet, etching isemployed to remove the un-reaction Ti on the surface and the low resistivity C54 TiSi2 film can be obtained. Thefilms deposited under various parameters are evaluated by scanning electron microscopy, x-ray diffraction and the resistivity measurement. Compared with other sputtering technologies used commonly for TiSi2 synthesis,this two-step method has apparent advantages such as the mild synthesis temperature and the high purity of the final product with low resistivity, uniform large area and improving surface roughness. In addition, the film also shows that the low coefficient of resistivity-temperature appears in the temperature range from 20℃to 800℃.     

多金属氧酸盐的氧化性及氧化催化作用研究新进展

结合作者近期工作，从分子及原子水平上评述了同多与杂多金属氧酸盐的氧化性及其氧化还原催化作用研究的新进展．