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Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
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This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have
been grown on InP substrates by molecular beam epitaxy. Peak to valley
current ratio of these devices is 17 at 300K. A peak current density of
3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten
monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with
four monolayers of InAs insert layer. The effects of growth interruption for
smoothing potential barrier interfaces have been investigated by high
resolution transmission electron microscope. 相似文献
12.
We report a resonant tunnelling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps. 相似文献
13.
A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices. 相似文献
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文章从异质界面的三角势阱中二维电子气的形成人手,计算了二维电子气的量子化能级及其面电子密度.对HEMT器件材料结构参数的优化、器件的电荷控制模型及I-V特性作了分析. 相似文献
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