Gd替代对La0.6-xGdxSr1.4MnO4磁性和输运性质的影响

随着x的增加，多晶La0.6-xGdxSr1.4MnO4（x=0, 0.1, 0.2, 0.4, 0.6）的零场冷却 曲线从类自旋玻璃型转变成顺磁型，并且每条零场冷却 曲线都有一在20K的拐点。这一行为可以从Gd和Mn各自对材料总磁性的不同贡献来理解。另外，在所有的样品中，从100K到室温，都观察到了热激活导电行为。由于Mn-Mn间强的反铁磁耦和，直到外场达到50 kOe，都没有观察到明显的磁电阻效应。     

光谱法研究2-(4-二甲氨基苯基)-5-氟-6-吗啉-1-氢-苯并咪唑与小牛胸腺DNA的相互作用

研究了2-(4-二甲氨基苯基)-5-氟-6-吗啉-1-氢-苯并咪唑(1)在不同pH条件下的紫外-可见吸收光谱,采用非线性最小二乘法得出分子1的三级加质子常数lgβ₁, lgβ₂, lgβ₃分别为4.96±0.03, 5.72±0.07和7.95±0.10。当pH 3.40时,分子1主要以一价离子状态存在,紫外-可见吸收光谱及荧光光谱表明该条件下分子与小牛胸腺DNA存在明显的相互作用,并得出分子1与DNA的结合常数K_b为(2.30±0.10)×104 mol-1·L。当分子浓度为10-8～1.2×10-6 mol·L-1时,荧光强度随DNA含量的增加而线性增强,分子1是一种潜在的测定DNA的定量试剂。     

一种高压光学样品池系统的设计与实验研究

设计和研制了一种用于溶液样品光学特性原位检测的高压光学样品池成套系统,组件包括手动泵、增压器和高压样品池。其中样品池开有3处光学窗口,以水为传压介质,设计的最高使用压力为600MPa。当用JGS1石英作窗口时,密封和保压效果良好;由于受到石英材质强度的限制,使用压力应控制在300MPa以下。为检验该系统在高压原位检测方面应用的可行性,进行了色氨酸高压荧光光谱的采集。     

N掺杂对α-石墨炔表面吸附H_2O,H,O和OH的电子性质和磁性的影响

石墨炔是一种新型的二维(2D)碳的同素异形体,炔键单元的高活性使其在小分子吸附方面相比石墨烯更具优势.本文基于密度泛函理论(DFT),研究了H_2O和H、O及OH分别在原始的和掺杂了N原子的α-石墨炔上的相互作用.研究结果表明,N掺杂和小分子吸附能够改变α-石墨炔的电子结构和磁性. N原子掺杂后α-石墨炔对小分子的吸附能力明显增强. H、O原子和OH吸附在N原子掺杂体系前后表现出明显的磁性差异:H原子和OH吸附在纯净的α-石墨炔上体系显示磁性,N原子掺杂后,磁性消失;而O原子则是吸附在纯净的α-石墨炔上未表现出磁性,N原子掺杂后,体系出现磁性.此外,α-石墨炔对水分子的吸附作用较弱,受范德瓦耳斯作用影响较大,属于物理吸附.本研究将为α-石墨炔中N杂质检测以及α-石墨炔基气体传感器的设计研究提供新的思路.     

Low-loss terahertz waveguide with InAs-graphene-SiC structure

We demonstrate a low-loss terahertz waveguide based on the InAs-graphene-SiC structure. By analyzing the terahertz waveguide proposed in this paper, we can obtain that it is the characteristic of a low transmission loss coefficient(αloss≈0.55 dB/m) for fundamental mode(LP01) when the incident frequency is larger than 3.0 THz. The critical radii of the inside and outside cylinders have been found for the high-quality transmission. The large inside radius and the high transmission frequency result in a flat transmission loss coefficient curve. As a strictly two-dimensional material, the double graphene surface rings perform better to improve the quality of transmission mode. These results provide a new idea for the research of the long-distance THz waveguide.     

High performance oscillator with 2-mW output power at 300 GHz

Material structures and device structures of a 100-GHz InP based transferred-electron device are designed in this paper. In order to successfully fabricate the Gunn devices operating at 100 GHz, the InP substrate was entirely removed by mechanical thinning and wet etching. The Gunn device was connected to a tripler link and a high RF(radio frequency)output with power of 2 mW working at 300 GHz was obtained, which is high enough for applications in current military electronic systems.     

不同工艺尺寸CMOS器件单粒子闩锁效应及其防护方法

基于建立的不同工艺尺寸的CMOS器件模型,利用TCAD器件模拟的方法,针对不同工艺CMOS器件,开展了不同工艺尺寸CMOS器件单粒子闩锁效应(SEL)的研究。研究表明,器件工艺尺寸越大,SEL效应越敏感。结合单粒子闩锁效应触发机制,提出了保护带、保护环两种器件级抗SEL加固设计方法,并通过TCAD仿真和重离子试验验证防护效果,得出最优的加固防护设计。结果表明,90nm和0.13μm CMOS器件尽量选用保护带抗SEL结构,0.18μm或更大工艺尺寸CMOS器件建议选取保护环抗SEL结构。     

PrxLa1-xP5O14的发光理论和浓度效应

本文利用Judd-Ofelt理论求得PrP₅O₁₄晶体的振子强度参数Q₂,比较了计算和实验的振子强度,计算了³P₁,³P₀,¹D₂和¹G₄能级的电偶极和磁偶极辐射跃迁几率及¹D₂→¹G₄和³H₄→³F₄能级对间的多极矩耦合的无辐射迁移几率。讨论了¹D₂能级发射强度的浓度效应。并且,给出¹D₂能级发射强度的表达式和强度随着浓度和单位时间内激发光引起的³H₄到¹D₂跃迁的诱导跃迁几率的变化图。 关键词：     

Electronic and optical properties of 3N-doped graphdiyne/MoS2 heterostructures tuned by biaxial strain and external electric field

The construction of van der Waals (vdW) heterostructures by stacking different two-dimensional layered materials have been recognised as an effective strategy to obtain the desired properties. The 3N-doped graphdiyne (N-GY) has been successfully synthesized in the laboratory. It could be assembled into a supercapacitor and can be used for tensile energy storage. However, the flat band and wide forbidden bands could hinder its application of N-GY layer in optoelectronic and nanoelectronic devices. In order to extend the application of N-GY layer in electronic devices, MoS₂ was selected to construct an N-GY/MoS₂ heterostructure due to its good electronic and optical properties. The N-GY/MoS₂ heterostructure has an optical absorption range from the visible to ultraviolet with a absorption coefficient of 10⁵ cm^-1. The N-GY/MoS₂ heterostructure exhibits a type-Ⅱ band alignment allows the electron-hole to be located on N-GY and MoS₂ respectively, which can further reduce the electron-hole complexation to increase exciton lifetime. The power conversion efficiency of N-GY/MoS₂ heterostructure is up to 17.77%, indicating it is a promising candidate material for solar cells. In addition, the external electric field and biaxial strain could effectively tune the electronic structure. Our results provide a theoretical support for the design and application of N-GY/MoS₂ vdW heterostructures in semiconductor sensors and photovoltaic devices.     

基于气泵的声管实验及分析

为研究声管的发声频率,进行了实验设计和分析.声管转动发声是由于空气在声管中的流动,考虑实际的实验条件,设计了气泵吹气代替声管转动的实验方式,改变吹气速率并测量发声频率.通过对实验结果的分析发现,此时的声管不符合两端开口即两端为波腹的条件,而是一端波节、一端波腹.声管的发声频率取决于其长度,符合驻波特性,发声时吹气速率与波纹长度须满足共振条件.研究结果有助于对驻波的理解和相关内容的实验设计.