Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

ICP—AES法测定U3O8标样中Al、Cr、Fe、Mg、P、Pb、Ti、V、W

用7402季铵－Kel-F粉萃取色层使铀和待测杂质元素分离，接着用975型ICP光量计测定U3O8标样中Al、Cr、Fe、Mg、P、Pb、Ti、V、W，回收率为95－110％，相对标准偏差≤5％。     

鄂尔多斯草地荒漠化过程与植被特征的变化

就鄂尔多斯草地荒漠化过程与植被特征变化的关系进行了研究。结果表明：在鄂尔多斯草地荒漠化过程中,植物群落退化的趋势为本氏针茅群落→本氏针茅 油蒿群落→油蒿群落→沙地以及油蒿群落→油蒿 牛心朴子群落→牛心朴子群落→沙地。退化阶段植被区系组成的变化表现为物种数和密度先降后升的的过程,本氏针茅群落→油蒿群落→牛心朴子群落密度的变化幅度为51.98→31.12→62.76→(ind.(tus.)/m^2),种数为15→12→17种;生活型谱变化不明显,说明植被的退化主要是群落中优势种的衰退造成的;生物量的变化幅度较大,为218.1→748.72→155.6(g/m^2);植物水分生态类型表现为中旱生植物逐渐减少,强旱生植物逐渐增多。     

番茄灰霉病菌侵染途径试验研究

番茄灰霉菌（Bofryfis cinereca pers)可浸染叶、茎、花、果等部位，果实受害造成的损失最为严重。为了给防治工作提供经济、有效、简便、易行的防治关键措施，于1992-1995年开展了病菌侵染途径试验研究。     

动荷载作用下海底粉土的孔压响应及其动强度

本文选用近海分布较广的粉土为研究对象，利用室内动三轴试验结果，找出动荷载作用下粉土的动应力应变关系。分析模拟波浪荷载作用下粉土中的孔压响应，临界循环次数，确定波浪作用下粉土的应力状态，破坏临界循环次数，判断不同深度处的粉土发生液化的可能性及发生液化所需要的时间；研究粉土在动荷载作用下的强度降低，为海上工程设计和施工提供科学依据。     

A Novel Contactless Method for Characterization of Semiconductors：Surface Electron Bean Induced Voltage in Scanning Electron Microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices.The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM).The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface.The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64pf.It is large enough for the detection of the induced surface potential.The irradiation mode of electron beam (e-beam) influences the signal generation When the e-beam irradiates on the surface of semiconductors continuously,a differential signal is obtained.The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection.The polarity of induced potential depends on the structure of potential barriers and surface states of samples.The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.     

基于有限元分析的特征值反问题求解的逆摄动方法

本文研究特征值反问题的求解方法,根据广义特征值反问题理论和有限元法的特点,以转子系统平面梁单元有限元模型结构分析的特征值反问题求解为例,给出一种新的逆摄动方法,给出了本逆摄动法较完整的理论基础,给出了其逆摄动参数的显式计算公式及相应的取值方法,本逆摄动法也可推广到其他单元类型的有限元模型特征值反问题的求解。     

改进的价连性指数用于烃衍生物标准生成焓的研究

对分子价连接性拓扑指数中杂原子价点价δi进行了改进,重新定义了一个价点价δi^h。并用δi^h构建的新价连接性拓扑指数^nX^h(n=0,1,2,3,…,n）中0价、1价、2价连接性拓扑指数研究了烃衍生物标准生成焓－△fHm(g)^θ与其之间的相关性,相关系数均在0．99以上。δi^h和^nX^h具有物理意义明确、计算简便等优点。     

膜片弹簧设计的概率优化研究

详细讨论了膜片弹簧尺寸参数的公差范围对其载荷、强度性能的影响,建立了膜片弹簧的优化设计数学模型,并运用概率统计方法确定约束条件,编制概率优化程序。以某膜片弹簧为例进行仿真计算,对比概率优化善后膜片弹簧的产品合格率,分析原因,得出了膜片弹簧主要尺寸的公差带宽是影响其生产成本的关键因素的结论,因而应适当控制公差带植。仿真计算结果表明：概率优化设计方法提高了膜片弹簧的设计水平,进而掌握了其产品质量控制的主动权,使生产成本得到降低。     

甲壳胺作为果汁澄清剂的应用研究

应用甲壳胺作为果汁澄清剂的研究结果表明,在640nm处,甲壳胺浓度320ppm,4小时后梨汁透光率>92％;加入甲壳胺480ppm,6小时后苹果汁透光率>90％;甲壳胺浓度240ppm的菠萝汁,6小时后透光率>85％。在澄清过程中,果汁的总糖度和pH无明显变化。澄清后的果汁,室温贮存150天仍清澈透明,无沉淀不浑浊,保持浓郁的原果汁风味。