Chemical Synthesis and Characterization of Flaky h-BCN at High Pressure and High Temperature

Hexagonal boron carbonitrogen （h-BCN） compound is synthesized from a mixture of boron powder and CNH compound prepared by pyrolysis of melamine （CaH6N6） under high temperature （1400-1500℃） and high pressure （5.0-5.5 GPa）. X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy and Raman spec- troscopy are used to determine the chemical composition and bonds of the product. The results show that the product has composition of B0.18C0.64N0.16 （near BC4N） and atomic-level hybrid. X-ray diffraction analysis indicates that the powder has a hexagonal network structure. Scanning and transmission electron microscopy results suggest that h-BCN compound morphology is mainly flaky in width about 1 μm and thickness 200nm.     

基于小波变换的眉毛识别方法

提出了一种基于小波变换的眉毛识别方法.该方法利用小波变换进行眉毛特征提取,选取奇偶行三层小波变换的高频、水平分量、垂直分量和整体二层小波变换的低频部分作为特征,利用最近邻法则进行识别.实验结果对比表明,该方法简单且识别率较高.     

分数阶四翼超混沌系统的控制与同步

四翼混沌吸引子的系统信号具有较宽的频谱带宽,在保密通信领域中具有重要的应用价值,研究四翼混沌吸引子的同步问题具有重要的意义;研究了一个新的分数阶四翼超混沌系统的控制与同步;基于分数阶系统稳定性定理,设计了非线性控制器实现了系统的镇定;通过构造合适的非线性观测器作为响应系统设计了一个系统同步方案,理论分析与数值模拟均验证了所得结果的准确性与有效性.     

某高校少数民族大学生生殖健康知识需求调查

目的:通过调查少数民族大学生生殖健康知识需求,为探索民族高校有效的健康教育模式提供依据.方法:采用不记名自填式问卷,对1000名少数民族大学生进行生殖健康知识需求调查.结果:少数民族大学生生殖健康知识不足,希望获得生殖健康知识.结论:民族院校少数民族大学生对生殖健康教育存在需求,高校有必要结合民族特点在民族院校开展生殖健康教育,提高学生的生殖健康知识水平,培养科学的生活行为.     

Tb3+，Sm3+掺杂的YNbO4多色荧光材料的制备及发光性能

采用溶胶-凝胶法合成了YNbO4∶Tb^3+,Sm^3+系列荧光粉。光谱测试表明:体系中的NbO43-基团能够吸收紫外光并将能量传递给Tb^3+和Sm^3+,从而增强荧光粉的发光强度。在290 nm激发下,YNbO4∶Tb^3+,Sm^3+荧光粉的发射光谱中既出现了Tb^3+的绿光发射又出现了Sm^3+的橙光发射。通过改变Sm^3+的掺杂浓度,实现了荧光粉发射光的光色可调。     

基于LabVIEW的三极管特性测试仪的设计

本文讨论以虚拟仪器的方式来实现三极管伏安特性的测试。主要通过在LabVIEW环境下编写出信号发生、数据采集、波形显示等程序,并在前面板中设计测试界面,完成对相应电路中三极管各极电流与集射电压信号的精确采集。通过框图程序对数据进行处理,直观地显示出输入\输出特性曲线及其他参数。     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

A GaN/Al_0.3Ga_0.7N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO₂ insulator (HfO₂-FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO₂-FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO₂ insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly.     

Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate

The anisotropic strain of a nonpolar (1120) a-plane GaN epilayer on an r-plane (1102) sapphire substrate, grown by low-pressure metal-organic vapour deposition is investigated by Raman spectroscopy. The room-temperature Raman scattering spectra of nonpolar a-plane GaN are measured in surface and edge backscattering geometries. The lattice is contracted in both the c- and the m-axis directions, and the stress in the m-axis direction is larger than that in the c-axis direction. On the surface of this sample, a number of cracks appear only along the m-axis, which is confirmed by the scanning electron micrograph. Atomic force microscopy images reveal a significant decrease in the root-mean-square roughness and the density of submicron pits after the stress relief.     

精确制导武器的导引头综述

精确制导武器已经成为衡量一个国家军事现代化程度的重要标志之一。导引头好比导弹的眼睛,在导弹的制导和控制中起着十分重要的作用。文中对雷达导引头,红外导引头,电视导引头,激光导引头及多模复合制导进行了综述,阐述了它们各自的特点、组成、原理,并对比了这些导引头的优缺点及应用环境。最后介绍了导引头的发展状况,预测了导引头今后的发展空间、应用领域等问题。