In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

N和F共掺杂C3N4的制备及其可见光催化性能

针对氮化碳（C₃N₄）光生电荷易复合、光催化性能有限的不足,我们制备N和F共掺杂C₃N₄（NF-C₃N₄）,以提升其光催化性能。利用NH₄F在高温下原位分解产生的HF和NH₃,对C₃N₄刻蚀的同时实现N和F双元素共掺杂。以氯化铵（NH₄Cl）为对照,制备N掺杂C₃N₄（N-C₃N₄）。利用扫描电子显微镜（SEM）、能谱仪（EDS）、X射线光电子能谱（XPS）、X射线衍射（XRD）、比表面积测试和电化学表征手段研究N、F共掺杂对C₃N₄形貌、成分、结构和物化性质等的影响规律。相比于C₃N₄和N-C₃N₄,NF-C₃N₄呈多孔状,比表面积增大,光生电荷的生成、分离和转移均被促进,NF-C₃N₄光催化还原Cr （Ⅵ）的速率是C₃N₄的2.6倍、N-C₃N₄的1.7倍。进一步考察了不同前驱体（尿素、双氰胺和三聚氰胺）对制备C₃N₄的影响,发现以尿素为前驱体的C₃N₄与NH₄F的质量比为3∶2时,NF-C₃N₄呈现最佳的光催化性能。催化剂用量、光照强度、空穴捕获剂浓度的增加和pH的降低均能提高Cr （Ⅵ）还原速率。在NF-C₃N₄浓度为0.1 g·L^-1、pH=3、c_EDTA-2Na=2 mmol·L^-1、40 min可见光照射后,Cr （Ⅵ）去除率达到90%。5次循环实验表明,优化制备的NF-C₃N₄光催化还原Cr （Ⅵ）的性能保持良好,具有较高的稳定性。     

催化材料对病毒的吸附和灭活作用及对哺乳动物细胞的毒性

 提出了以吸附和催化原理灭活病毒的设想，旨在开发出对病毒有过滤、吸附及灭活作用的高效非特异性催化材料，应用于各种防护设施，有效控制非典型肺炎（SARS）的传播．采用与SARS病毒相似的副流感病毒作为模拟对象，进行了吸附及灭活该病毒的催化材料研究，并考察了催化材料对哺乳动物细胞的毒性．结果表明，病毒气溶胶的阻留及吸附结果与基于DNA吸附的色谱分析结果相一致；部分材料可以强烈地吸附病毒（100％），甚至在强烈振荡下并洗脱至第3次，病毒也不能脱附；一些材料不仅可以吸附病毒，而且强烈振荡后的洗脱液虽然表现出一定的血凝效价，但接种鸡胚后，病毒并不增殖，说明材料具有明显的催化病毒灭活性能；对细胞毒性极低的材料可以用在与人体接触的防护材料和设施中．筛选出的性能优异的催化材料，拟进一步考察其对SARS病毒的灭活作用．     

无藻满江红(Anabena-free Azolla)和满江红鱼腥藻(Anabaena azollae)重建共生体

切除满江红大孢子果顶端漏斗状膜和囊群盖,可彻底清除大孢子果内所含的鱼腥藻,并发育成无藻满江红。移植囊群盖于种内或种间去顶孢子果,成功地得到了重组的共生体。“新组合满江红”经扫描电子显微镜观察、固氮酶活性测定和体内鱼腥藻单克隆抗体鉴定,得以证实。其重建机率为10％。接种人工培养的鱼腥藻于无藻满江红上,发现有不完全共生现象存在。本文对萍藻交换的条件及其在满江红研究和应用前景,做了简要的讨论。     

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

This paper investigates the impact of electrical degradation and current collapse on different thickness SiNx passivated AlGaN/GaN high electron mobility transistors.It finds that higher thickness SiNx passivation can significantly improve the high-electric-field reliability of a device.The degradation mechanism of the SiNx passivation layer under ON-state stress has also been discussed in detail.Under the ON-state stress,the strong electric-field led to degradation of SiNx passivation located in the gate-drain region.As the thickness of SiNx passivation increases,the density of the surface state will be increased to some extent.Meanwhile,it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

我校与陕西福天宝集团公司签定技术转让协议

20 0 0年 1 1月 9日 ,我校与陕西福天宝集团公司在该集团公司举行了“年产 50 0 t含重金属离子污水处理剂 DTCR技术成果转让签约仪式”,技术转让费成交 60万元。这是继 7日在杨凌农高会对该项目拍卖后双方具有实质性进展的再合作。我校副校长朱恪孝 ,“2 1 1工程”办公室、科研处有关负责人 ,以及陕西福天宝集团公司董事长吴言强、总经理黄翠萍等出席了签约仪式。这项技术成果是由我校化学研究所孙来九教授、王文丰副教授等人开发研制的环保产品 ,该产品是一种液体高分子螯合树脂 ,能与废水中的重金属离子迅速反应生成水不溶性络合盐而达…     

建构主义学习理论对＂纲要＂教学的启示

建构主义是现代西方教学理论,强调以学生为中心,突出学习的主动性、社会性和情境性。这一观点引入高校＂纲要＂教学可以让学生自己主动建构＂纲要＂课的知识体系;提高学生的学习兴趣,调动他们的学习积极性和主动性,提高学习效率;也能大大提高理论课的说服力,使其成为大学生真心喜爱、终身受益的思想政治理论课。