数字滤波器在惯性测量装置中的应用

分析了数字电压表和数字示波器对惯性测量装置（IMU）模拟输出的测量数据，为了减少惯性测量装置模拟输出中的干扰信号对模数转换结果的影响，设计了数字巴特沃斯滤波器和中值平均滤波器。通过计算机仿真和实测说明：这两种数字滤波方法均可以在几乎不增加硬件的条件下提高IMU数字输出精度。     

球面空间中的一类几何不等式

本文获得关于面空间中ｎ维单形的极正弦的一类几何不等式。     

基于Mueller矩阵椭偏仪的纳米压印模板与光刻胶光栅结构准确测量

在纳米压印工艺中,对模板和压印结构的几何参数进行快速、低成本、非破坏性地准确测量具有非常重要的意义.与传统光谱椭偏仪只能改变波长和入射角2个测量条件并且在每一组测量条件下只能获得振幅比和相位差2个测量参数相比,Mueller矩阵椭偏仪可以改变波长、入射角和方位角3个测量条件,而且在每一组测量条件下都可以获得一个4×4阶Mueller矩阵共16个参数,因此可以获得更为丰富的测量信息.通过选择合适的测量条件配置,充分利用Mueller矩阵中的测量信息,有望实现更为准确的纳米结构测量.基于此,本文利用自主研制的Mueller矩阵椭偏仪对硅基光栅模板和纳米压印光刻胶光栅结构进行了测量.实验结果表明,通过对Mueller矩阵椭偏仪进行测量条件优化配置,并且在光学特性建模时考虑测量过程中出现的退偏效应,可以实现压印工艺中纳米结构线宽、线高、侧壁角以及残胶厚度等几何参数更为准确的测量,同时对于纳米压印光刻胶光栅结构还可以直接得到光斑照射区域内残胶厚度的不均匀性参数.     

自适应双树复小波遥感图像复原

由于遥感图像先验知识难以获取,提出了一种自适应的双树复小波迭代收缩复原算法。该算法根据模糊程度和噪声程度估计正则化参数,并利用经验公式计算收缩阈值。在实际应用中,算法能有效解决两步迭代算法使用固定参数的缺点,从而达到提高图像复原质量的目的。实验表明：相对于两步迭代算法,该算法复原图像的峰值信噪比提高0.64~12.23 dB,收敛速度提高1.4~16倍;同时,算法在提高图像复原质量、抑制噪声干扰及减少计算时间方面优势明显。     

不同管排方式下三维鼓泡床内气固流型及埋管磨损的LES-DEM研究

埋管具有限制气泡大小和改变床内气固流动特性而被广泛用于密相流化床内,但不同管排方式对改善气固流型特性的作用不同。本文基于LES-DEM耦合方法,在颗粒尺度层面研究了不同管排方式下鼓泡床内颗粒流动特性以及埋管磨损分布特性。发现埋管的存在使得在管束的上部和下部区域存在四个明显的局部颗粒循环.另外,错列管排对颗粒的轴向迁移的限定更为明显,使得颗粒浓度在水平方向上分布更为均匀。由于不同的管排方式导致不同的气固流动特性,管束周围磨损特性差异明显.     

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.     

Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs

Ferroelectric (FE) HfZrO/Al$_{2}$O$_{3}$ gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mobility transistors (MFSHEMTs) with varying Al$_{x}$Ga$_{1-x}$N barrier thickness and Al composition are investigated and compared by TCAD simulation with non-FE HfO$_{2}$/Al$_{2}$O$_{3}$ gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors (MISHEMTs). Results show that the decrease of the two-dimensional electron gas (2DEG) density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching efficiency. The electrical characteristics of MFSHEMTs, including transconductance, subthreshold swing, and on-state current, effectively improve with decreasing AlGaN thickness in MFSHEMTs. High Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG density and FE polarization in MFSHEMTs, improving the transconductance and the on-state current. The subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs, affording favorable conditions for further enhancing the device.     

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic computing. In this work, we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin-orbit toque can be tuned into a multistate one as decreasing the domain nucleation barrier. Therefore, the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic field. Moreover, we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation behavior. This work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.     

Adaptive synchronization of a class of fractional-order complex-valued chaotic neural network with time-delay

This paper is concerned with the adaptive synchronization of fractional-order complex-valued chaotic neural networks (FOCVCNNs) with time-delay. The chaotic behaviors of a class of fractional-order complex-valued neural network are investigated. Meanwhile, based on the complex-valued inequalities of fractional-order derivatives and the stability theory of fractional-order complex-valued systems, a new adaptive controller and new complex-valued update laws are proposed to construct a synchronization control model for fractional-order complex-valued chaotic neural networks. Finally, the numerical simulation results are presented to illustrate the effectiveness of the developed synchronization scheme.     

Φ1m平面镜的力学分析及实验研究

空间太阳望远镜(SST)的装校需要一个倒置的直径为1m的平面镜,此平面镜的面形精度决定了SST的装校成败。平面镜的支撑采用滑轮砝码机构,具有18个牵引点,每个牵引点的牵引力是独立可调的。在此支撑下,利用有限元分析方法分析了平面镜的变形情况,提出了用主动光学原理对牵引力大小进行优化的方法,计算出了保持平面镜具有良好面形时所需要的牵引力的大小。采用Ritchey_Common方法对平面镜进行了测量。测量结果表明,平面镜面形精度的均方根值优于λ/30(λ=633nm),满足了SST的装校要求。