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Nanowire-like,condyloid-like and flakes of Si-nanostructures were synthesized by thermal evaporation under different mass transport conditions by changing the ambient pressure.The structural analysis shows that a higher mass transport rate is not favourite for the formation of fine single crytalline nanowires when the substrate placed closely to the thermal vapour source,The higher mass transport rate can induce a lower Si partial pressure near the source and hence results in a lower supersaturation near the substrate.Experimental results reveal that the formation of Si-nanowires is not controlled by mass transport but by surface process.The driving force on the surface in the key factor for the formation of well-crystallized nanowires. 相似文献
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用X射线双晶衍射摇摆曲线以及双晶X射线形貌对两个SrTiO3基片的单晶质量进行了对比研究,并用X射线掠入射镜面反射及漫散射研究了它们的表面粗糙结构.结果表明,两个SrTiO3基片中都存在镶嵌缺陷,其中一个样品的晶体质量相对较高.两个样品的表面粗糙结构相差很大,包括均方根粗糙度σ和横向相关长度ξ.σ分别为(0.5±0.1)和(1.3±0.1)nm,ξ分别为(1200±200)和(300±20)nm.样品的表面粗糙将增加X射线的漫散射强度而降低镜面反射的强度.晶体质
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Sterilization of mycete attached on the unearthed silk fabrics by an atmospheric pressure plasma jet 下载免费PDF全文
The sterilization of the simulated unearthed silk fabrics using an atmospheric pressure plasma jet(APPJ) system employing Ar/O_2 or He/O_2 plasma to inactivate the mycete attached on the silk fabrics is reported. The effects of the APPJ characteristics(particularly the gas type and discharge power) on the fabric strength, physical-chemical structures,and sterilizing efficiency were investigated. Experimental results showed that the Ar/O_2 APPJ plasma can inactivate the mycete completely within 4.0 min under a discharge power of 50.0 W. Such an APPJ treatment had negligible impact on the mechanical strength of the fabric and the surface chemical characteristics. Moreover, the Ar ions, O and OH radicals were shown to play important roles on the sterilization of the mycete attached on the unearthed silk fabrics. 相似文献
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Deliberately introducing defects into photonic crystals is an important way to functionalize the photonic crystals. We prepare a special large-scale three-dimensional(3D) photonic crystal(PC) with designed defects by an easy and low-cost method. The defect layer consists of photoresist strips or air-core strips. Field emission scanning electron microscopy(FESEM) shows that the 3D PC is of good quality and the defect layer is uniform. Different defect states shown in the ultraviolet-visible spectra are induced by the photoresist strip layer and air-core strip layer. The special large-scale 3D PC can be tested for integrated optical circuits, and the defects can act as optical waveguides. 相似文献
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自然界中三角和斐波纳契数的叶序花样随处可见.通过控制几何条件以及冷却之后产生的应力,这些花样能在Ag内核/SiOx壳层微结构(约10μm大小)上予以实现.在这种内核/壳结构表面上,大小形状十分一致的小球通过自组装是形成斐波纳契数花样(我们观察到5×8, 8×13和13×21三种)还是三角花样,取决于基座面的几何构形.作者工作的意义在于揭示了在适当的几何约束下,自组装形成的花样是总应变能最小的结果.这对叶序花样的形成来源提出了一种非遗传的机理.此外,作者的研究表明,高度有序的、甚至含有内禀缺陷的微结构可以通过应力工程在大面积范围内同时得到. 相似文献
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自然界中三角和斐波纳契数的叶序花样随处可见.通过控制几何条件以及冷却之后产生的应力,这些花样能在Ag内核/SiOx壳层微结构(约10μm大小)上予以实现.在这种内核/壳结构表面上,大小形状十分一致的小球通过自组装是形成斐波纳契数花样(我们观察到5×8,8×13和13×21三种)还是三角花样,取决于基座面的几何构形.作者工作的意义在于揭示了在适当的几何约束下,自组装形成的花样是总应变能最小的结果.这对叶序花样的形成来源提出了一种非遗传的机理.此外,作者的研究表明,高度有序的、甚至含有内禀缺陷的微结构可以通过应力工程在大面积范围内同时得到. 相似文献
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Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of InxGa1-xN/GaN Multiple Quantum Wells 下载免费PDF全文
Inx Ga1-x N/GaN multiple quantum well (MQW) samples with strain-layer thickness larger/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations. 相似文献
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In this article, mono-dispersed hexagonal structure CdSe nanocrystals with polyhedron shape were prepared by an open solvent thermal reaction. They show a discrete excitonic transition structure in the absorption spectra and the minimal photoluminescence (PL) peak full-width at half-maximum of 19nm. The PL quantum yield is about 60%. Transmission electron micrographs, high-resolution transmission electron micrographs, x-ray powder diffraction patterns, UV-vis absorption spectra and PL spectra were obtained for the as-prepared CdSe nanocrystals. The size of the CdSe nanocrystals can be tuned by changing the reaction temperature or time. Due to the improved synthesis method, a different growth mechanism of the CdSe nanocrystals is discussed. 相似文献
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