热丝辅助双偏压氢等离子体制造金刚石锥状表面研究

利用热丝辅助双偏压氢等离子体对化学气相沉积金刚石薄膜进行了纳米尺度上的表面改装,制造出锥状金刚石列阵.金刚石薄膜内在的柱状结构使氢离子在刻蚀薄膜时产生非均匀的刻蚀速率,对锥状表面的形成起着重要作用.另一方面,溅射出的含碳粒子会发生二次沉积,最终的特征表面形貌取决于刻蚀与含碳基团再沉积之间的相互竞争.栅极的使用影响基底区域放电的伏安特性,改变栅极电流可以对形成的金刚石特征表面结构进行有效调节.在处理过程中少量掺入甲烷,提高了金刚石表面附近的含碳基团浓度,促进二次成核,进而诱发均匀分布的锥状列阵. 关键词： 等离子体 表面 金刚石薄膜     

溶胶-凝胶SiO2薄膜氨热两步后处理

 以正硅酸乙酯为前驱体,氨水作催化剂,采用溶胶-凝胶法提拉镀制SiO₂双面膜,对薄膜进行氨处理和热处理。采用椭偏仪、分光光度计、红外光谱、扫描探针显微镜、静滴接触角测量仪表征薄膜的特性。研究表明：经氨热两步后处理,膜厚持续减小,折射率经氨处理先增大了0.236,再经热处理又减小了0.202,膜层透光性变好,透过率峰值持续向短波方向移动;经两步后处理的膜面平整度明显变好,与水的接触角先增大到58.92°后减小到38.07°。     

^12C和X射线辐照人肺癌细胞H1299的生物学效应

用高传能线密度（LET）的^12C离子束和低LET的X射线辐照体外培养的非小细胞肺癌H1299（p53基因缺失）,研究它们的辐照生物学效应的差异。用克隆形成率法测定了细胞对射线的辐射敏感性;用AnnexinV/PI试剂盒检测了细胞早期凋亡;用流式细胞仪检测了细胞周期变化。实验结果表明,^12C离子束辐照H1299细胞的存活率明显低于用X射线辐照的;^12C离子束引起H1299细胞的早期凋亡率明显高于X射线辐照引起的,且持续时间更长;^12C离子束引起的H1299细胞G2/M期的抑制更明显。说明H1299细胞对高LET的^12C离子束的辐射敏感性高于对X射线的,重离子对p53基因缺失型肿瘤的治疗可实施较低的照射剂量、较少的照射次数和较长的时间间隔。     

理想情况下电感中电流和电容电压的突变

本文将实际物理系统的暂态过程理想化，得到 了便于进行定量分析的理想电路，并说明了这类电路 电感电流和电容电压发生突变的可能性．本文还从电路结构上讨论了电感电流和电容电压发生突变的必要 条件．     

Kondo Resonance versus Fano Interference in Double Quantum Dots Coupled to a Two-Lead One-Ring System

We analyse the transport properties of a coupled double quantum dot （DQD） device with one of the dots （QD1） coupled to metallic leads and the other （QD2） embedded in an Aharonov-Bhom （A-B） ring by means of the slaveboson mean-field theory. It is found that in this system, the Kondo resonance and the Fano interference exist simultaneously, the enhancing Kondo effect and the increasing hopping of the QD2-Ring destroy the localized electron state in the QD2 for the QD1-leads, and accordingly, the Fano interference between the DQD-leads and the QD1-leads are suppressed. Under some conditions, the Fano interference can be quenched fully and the single Kondo resonance of the QD1-leads comes into being. Moreover, when the magnetic flux of the A-B ring is zero, the influence of the parity of the A-B ring on the transport properties is very weak, but this influence becomes more obvious with non-zero magnetic flux. Thus this model may be a candidate for future device applications.     

基于驻留时间补偿的抛光误差控制方法

 针对计算机控制光学表面成形中光学表面存在中高频误差的问题,提出了一种基于驻留时间补偿的有效控制方法。分析了抛光误差的形成机理和影响因素,对系统的误差影响因素进行分类和定量描述,构建了抛光过程中磨损影响因子、浓度变化影响因子和系统影响因子。基于各影响因素的影响因子对抛光驻留时间的求解函数进行了修正,提出采用离散最小二乘法对修正的函数求解驻留时间。研究表明：这种补偿方法能提高计算机控制光学表面成形技术中加工模型的精度,减小光学表面的残余误差。     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

激光钝化对熔石英修复后损伤性能影响的实验研究

采用10.6 μupm 的 CO₂激光, 对单次激光脉冲辐照修复熔石英存在的烧蚀采用大光斑钝化去除. 经过辐照修复的区域置于前表面测试初始损伤阈值, 结果表明调制造成的损伤得到了一定程度的抑制; 辐照区域置于后表面修复后 熔石英的初始损伤阈值超过了基底的初始损伤阈值. 实验观察到了应力分布外扩, 同时明显减弱. 对损伤增长的测试说明, 经过激光熔融辐照后的损伤点, 当应力释放以后, 损伤扩展初期表现出指数增长趋势, 后期随着辐照次数的增加, 损伤增长不再明显, 并且趋于恒定值.     

Two localized CO2 laser treatment methods for mitigation of UV damage growth in fused silica

Two methods：high-power,short-time,single-shot irradiation（Method A） and low-power,long-time,multi-shot irradiation（Method B） are investigated to mitigate the UV damage growth in fused silica by using a 10.6-μm CO2 laser.To verify the mitigation effect of the two methods,the laser induced damage thresholds（LIDTs） of the mitigated sites are tested with a 355-nm,6.4-ns Nd：YAG laser,and the light modulation of the mitigation sites are tested with a 351-nm continuous Nd：YLF laser.The mitigated damaged sites treated with the two methods have almost the same LIDTs,which can recover to the level of pristine material.Compared with Method A,Method B produces mitigated sites with low crater depth and weak light modulation.In addition,there is no raised rim or re-deposited debris formed around the crater edge for Method B.Theoretical calculation is utilized to evaluate the central temperature of the CO2 laser beam irradiated zone and the radius of the crater.It is indicated that the calculated results are consistent with the experimental results.     

Si掺杂Ag基超分辨薄膜读出性能研究

超分辨薄膜是一种能够实现突破光学衍射极限的功能薄膜,它在超分辨近场光存储技术中起到至关重要的作用。采用磁控溅射共溅的方式制备了Ag掺杂一定量Si的超分辨复合薄膜,测试了其作为掩膜层的超分辨光盘读出性能,并获得了最佳的薄膜制备条件,即当Ag溅射功率为55 W,Si为95 W,溅射时间为80s,薄膜厚度为39nm时,超分辨光盘的读出信号载噪比(CNR)最高为28dB。用X射线光电子能谱测量了上述薄膜的组成,用扫描电子显微镜观察了薄膜微区形貌,并用椭圆偏振光谱仪测量了薄膜的光学常数和厚度。超分辨复合薄膜的读出机理可以用Ag的散射型机理解释。光盘在持续读出10万次以后读出信号基本没有下降。