无穷水平倒向双重随机微分方程解的存在唯一性及比较定理

研究无穷区间上的倒向双重随机微分方程,在一类Lipschitz条件下,通过有限区间的逼近,运用Gronwall不等式和It公式,证明了方程解的存在性、唯一性以及比较定理.     

企业培育人才的对策

企业是由人组成的集合体。破解“企”字，有一个精当的说法：“有人则企，无人则止。”人才是企业发展的非常重要的战略性资源。成功的企业，必然是能不断聚集和持续造就高素质人才的企业。培育人才的结果，就企业而言，是生产力和竞争力的增强，就员工而言，是工作生活质量和人生满意程度的提高。面对建筑安装企业改革带来的机遇和挑战，必须坚持把人才资源的开发和使用放在优先发展的地位，为企业的长远发展提供强有力的技术保障和智力支持。     

中国现代时期管理思想的提炼

抗战胜利到中共十一届三中全会召开期间,是中国现代管理思想提炼的时期.代表着中国共产党领导集体智慧的毛泽东思想是中国古往今来最系统、全面、深刻的管理思想,它既有马克思列宁主义的精神,又有中华文化的灵魂,古为今用,洋为中用,集古今优秀管理思想之大成.其代表人物有毛泽东、周恩来、刘少奇和朱德等.     

鞍山玉文化旅游开发研究

在分析鞍山发展"玉文化之旅"心理、历史、现实的基础上,提出了发展鞍山玉文化旅游的必要举措及保障措施,如整合玉、佛文化,打造特色旅游线路,创办旅游节、会等.     

富营养水体中磷化氢的测定

1　引　　言磷化氢作为大气中普遍存在的气体已经得到了各方面的承认 ,但由于其浓度过低 ,用传统的方法不能做出定量的结论。Ｄｅｖａｉ等人 1 988年首次在污水处理厂的挥发物中成功地检测到磷化氢的存在。其后 ,Ｄ .Ｇｌｉｎｄｅｍａｎｎ等对传统的分析方法进行了改进 ,在大气环境中检测到磷化氢的存在 ,同时 ,土壤中吸附态的磷化氢的测定也得到了解决。在富营养化水体中 ,也有磷化氢的存在 ,但由于磷化氢易受到光、氧气等因素的影响 ,其测定方法仍没有得到很好的解决 ,本文用多项平衡技术第一次测到了富营养化水体中的磷化氢。2　实验部分…     

分子动力学研究V82A和L90M变异对HIV PR-IDV复合物的影响

为了说明V82A和L90M变异对蛋白酶(PR)和茚地那韦(IDV)复合物的影响,进行了5.5ns的MD模拟.用MM-PBSA方法计算了体系的结合自由能,计算和实验结果一致.分解自由能为不同能量项说明,这两个变异引起熵的贡献变化大于焓的贡献变化.分解自由能到每个残基说明Wild,V82A和L90M具有相似的结合模式,结合能的贡献主要来源于A28/A28',I50/I50'和I84/I84'这六个残基组,详细分析了Wild和IDV的结合模式,对比分析了V82A和L90M变异引起结合模式的细小变化.V82A变异引起结合模式的变化是由于变异后位阻减小导致的.L90M变异引起D25和L90间的作用增强并引起结合模式的细小变化.研究结果有助于更好地理解变异对抑制剂和HIV-1PR结合模式的影响,并可以用来帮助设计更高效的PR抑制剂.     

FKBP12蛋白与其抑制剂结合的分子动力学模拟和结合自由能计算

FKBP12 (FK506-binding protein-12)是一种具有神经保护和促神经再生作用的蛋白. 采用分子动力学模拟取样, 运用MM-GBSA方法计算了FKBP12和3个抑制剂(GPI-1046, 308和107)的绝对结合自由能, GPI-1046的结合能最小, 308小于107的结合能. 通过能量分解的方法考察了FKBP12蛋白的主要残基与抑制剂之间的相互作用和识别, 计算结果表明: 3个抑制剂具有相似的结合模式, Ile56和Tyr82主要表现为氢键作用, Tyr26, Phe46, Val55, Ile56, Trp59, Tyr82, Tyr87和Phe99形成疏水作用区. 计算结果和实验结果吻合.     

Device research on GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistors grown by metal organic chemical vapour deposition

This paper applies a novel quad-layer resist and e-beam lithography technique to fabricate a GaAs-based InAlAs/InGaAs metamorphic high electron mobility transistor (HEMT) grown by metal organic chemical vapour deposition (MOCVD). The gate length of the metamorphic HEMT was 150~nm, the maximum current density was 330~mA/mm, the maximum transconductance was 470~mS/mm, the threshold voltage was -0.6~V, and the maximum current gain cut-off frequency and maximum oscillation frequency were 102~GHz and 450~GHz, respectively. This is the first report on tri-termination devices whose frequency value is above 400~GHz in China. The excellent frequency performances promise the possibility of metamorphic HEMTs grown by MOCVD for millimetre-wave applications, and more outstanding device performances would be obtained after optimizing the material structure, the elaborate T-gate and other device processes further.     

The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.