Quantum Correlations in a Family of Two-Qubit Separable States

Quantum correlations in a family of two-qubit separable classical-quantum correlated states are intensively studied with four diferent approaches,namely,quantum discord[Phys.Rev.Lett.88(2002)017901],measurementinduced disturbance(MID)[Phys.Rev.A 77(2008)022301],ameliorated MID[J.Phys.A:Math.Theor.44(2011)352002]and quantum dissonance[Phys.Rev.Lett.104(2010)080501].Quantum correlations captured with diferent approaches are compared and discussed so that their three distinct features are exposed.     

应变Si NMOSFET阈值电压集约物理模型

本文采用渐变沟道近似和准二维分析的方法, 通过求解泊松方程, 建立了应变Si NMOSFET阈值电压集约物理模型. 模型同时研究了短沟道, 窄沟道, 非均匀掺杂, 漏致势垒降低等物理效应对阈值电压的影响. 采用参数提取软件提取了阈值电压相关参数, 通过将模型的计算结果和实验结果进行对比分析, 验证了本文提出的模型的正确性. 该模型为应变Si超大规模集成电路的分析和设计提供了重要的参考. 关键词： 应变Si NMOSFET 阈值电压 集约物理模型     

Laser output of radial-slab solid-state laser

In this letter, numerical simulation and experimental study of a radial-slab solid-state laser are presented. The laser includes four crossing-slabs pumped by four Xe flashlamps. The numerical simulation of coherent intensity in the near field and the far field indicates that the laser with the structure can improve the quality of output beam compared with incoherent beam combination. The radial-slab solid-state laser is fabricated, and initial experiments are carried out at a pulse repetition of 1 Hz. Nine beams in the near field and one combined beam in the far field are obtained in our initial experiment. The experimental results are consistent with the numerical analysis in the coherent condition. The results show that coherent beam combination is obtained by this laser.     

Characterization of spectral hole depth in Tm^3＋ ：YAG within the cryogenic temperature range

In this paper, spectral hole depth dependence on temperature below 10 K in Tm^3＋ ：YAG crystal is investigated in detail. A novel model is proposed to analyze the temperature dependence on the spectral hole. By using the proposed model, we theoretically deduce the temperature dependence of spectral hole depth. The results are compared with experimental results and they are in good agreement. According to the theoretic results, the optimum temperature in experiment can be found.     

Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.     

Cu2O/C60梯度薄膜的制备

 功能梯度材料应用前景广阔,特别在ICF研究中,梯度靶是一种重要的基础-基准靶。以Cu₂O和C₆₀为原料,用真空蒸镀法在石英基底上制备了Cu₂O/C₆₀梯度薄膜,并用XPS, AFM, 紫外光谱仪对其成份分布、表面形貌、紫外吸收谱进行了测试。测量结果表明,薄膜的组成沿厚度方向呈连续梯度变化,符合梯度功能材料的变化规律。     

同位旋激发能研究

在扩展的Skyrme有效相互作用下,利用Hartree-Fock理论研究了同位旋激发能与温度、密度的关系.结果表明同位旋激发能随密度的降低以及温度的增加而降低.同时研究了对称能与同位旋激发能的关系,指出对称能是同位旋激发能的一部分,且占相当大的比重.最后研究了不同的势参数下,同位旋激发能随相对中子过剩的变化关系,发现同位旋激发能较强地依赖于对称能强度系数,而对不可压缩系数以及有效质量不太敏感.从而为实验上通过研究同位旋激发能来提取核物质状态方程中的对称能部分指出了一条途径.     

AN EFFECTIVE TWO-LEVEL CHANNEL FOR AN IMPURITY IN A SUPERLATTICE

The eigenstates and eigenspectrum of a charged particle in a one-dimensional semiconductor superlattice with an impurity under the action of a dc electric field are investigated employing the single-band tight-binding model. We find that the system undergoes a series of avoided crossings, at which resonant oscillations between the impurity and its nearest neighbour occur if appropriate conditions are met, suggesting an effective two-level approximation. This phenomenon shows that introducing an impurity in a perfect lattice provides a promising structure for the observation of terahertz radiation.     

绝缘微堆质子直线加速器关键技术研究进展北大核心CSCD

基于绝缘微堆技术的直线加速器由于其能够实现较高的粒子加速梯度,尤其在质子加速及肿瘤治疗领域的优势得到高度关注。目前该种加速器处于研发阶段,有一系列技术和工程问题有待解决。介绍了课题组在过去的两年里围绕建立一台1 MeV质子注入器原型样机在固态脉冲功率系统、绝缘微堆及质子束源等方面取得的研究进展。实现了耐压梯度接近20 MV/m的环形绝缘微堆样品,样品内径30 mm,外径50mm,厚度15mm,基本达到设计要求;固态脉冲功率系统实现了光导开关多路稳定工作模式,开关直流偏置耐压达到20kV,采用激光二极管触发同步系统在15路同步时实现了低于1ns的抖动,输出300kV的电压脉冲,输出电压脉冲宽度10ns;进行了低能质子加速束流动力学的初步分析和模拟工作,模拟结果表明采用微堆结构可以实现质子束的有效加速和传输。