Comparison of Nd:YAG Ceramic Laser Pumped at 885nm and 808nm

Laser performance of 1064 nm domestic Nd：YAG ceramic lasers for 885 nm direct pumping and 808 nm traditional pumping are compared. Higher slope efficiency of 34% and maximum output power of 16.5 W are obtained for the 885nm pump with a 6ram length 1 at.% Nd：YAG ceramic. The advantages for 885nm direct pumping are discussed in detail. This pumping scheme for highly doping a Nd：YAG ceramic laser is considered as an available way to generate high power and good beam quality simultaneously.     

High speed and wide temperature range uncooled 1.3-μm ridge waveguide DFB lasers

A 1.3-μm wavelength vertical-mesa ridge waveguide mulitple-quantum-well （MQW） distributed feedback （DFB） laser with high directly modulated bandwidth and wide operation temperature range is reported. With the optimization of the strained-layer MQWs in the active region, the surrounding graded-index separated-confinement-heterostructure waveguide layers, together with the optimization of the detuning and coupling coefficient of the DFB grating, high directly modulation bandwidth of 16 GHz at room temperature and wide working temperature range from -40 to 85 ℃ are obtained. The mean time to failure （MTTF） is estimated to be over 2×10^6 h. The device is suitable as light source of high-bit-rate optical transmitters with small size and reduced cost.     

低能离子注入宫颈癌细胞的红外光谱分析

利用离子注入机所产生的低能N+模仿宇宙中低能离子作用于人宫颈癌细胞(HeLa cell),探索其对人类细胞的影响及作用机制。因实验中的低能离子产生和加速要在真空中进行,细胞在离子注入同时将受到真空的影响,为此研究人员利用石蜡油保护细胞以防止注入时的水份蒸发。注入处理完毕后收集细胞,采用傅里叶变换红外光谱法(FTIR)分析真空和低能N+束注入后细胞中大分子的相对含量、构型及其构象变化等方面的信息。结果表明：(1)不同处理后的样品在3 300 cm-1附近吸收谱带存在明显差异。对照样品的特征峰位为3 300 cm-1,而其他样品中除了注入5×1014 N+·cm-2外,红外吸收峰均向长波数方向移动,真空2×1015 N+·cm-2样品的频移尤为明显至3 420 cm-1处。(2)与对照样品相比较,各处理样品的1 378 cm-1处吸收峰峰位均向长波数方向频移。(3)处理样品相对于对照样品而言,2 360 cm-1处吸收峰均向长波数方向移动。该结果说明低能离子注入处理可以引起细胞中核酸、蛋白的含量和构象变化。     

非线性Schr■dinger方程的一种数值模拟方法

该文通过对非线性Schr■dinger方程增加耗散项,提出了一种新的三层线性差分格式.证明了该格式满足连续方程所具有的两个守恒量及收敛性和稳定性.通过数值例子与已知格式进行比较,结果表明该格式计算简单且具有较高精度.     

复合材料弹侵彻混凝土靶的研究

 利用碳纤维复合材料壳体和金属弹头组成的复合弹体,对混凝土靶进行了高速侵彻实验,弹体分别以336、447和517 m/s的速度对强度为30 MPa、厚度为200 mm的混凝土靶进行正侵彻和30°斜侵彻。实验结果表明：碳纤维复合材料壳体具有较高的强度,在高速侵彻靶体的过程中弹体结构能够保持完整,复合材料壳体没有纤维分层和断裂产生。相对于同样结构尺寸的金属弹体（将复合材料壳体替换为密度7.8 g/cm³的金属材料）,复合材料弹填充物的质量分数（18.5%）约为金属弹体的两倍,因此采用轻质高强复合材料替代高密度金属弹身,不仅可以提高弹体装填比、增加比毁伤威力,而且还具有较高的侵彻能力。     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.     

有限秩的幂零p-群的p-自同构

设G是一个有限秩的幂零p-群,α和β是G的两个p-自同构,记I= ((αβ(g))(βα(g))-1)|g∈G),则(i)当I是有限循环群时,α和β生成一个有限P-群; (ii)当I是拟循环p-群时,α和β生成一个可解的剩余有限P-群,它是有限生成的无挠幂零群被有限p-群的扩张．     

高阶特征线性及其与semi-Lagrangian方法的比较

特征线性与semi-Lagrangian方法都是处理流体方程时间离散的两种有效的方法．它们比经典的半隐格式，如Backward-Euler／Adams-Bashforth方法有更好的稳定性．本提出一种基于高阶空间离散的特征线法，通过稳定性，精度和计算复杂性与semi-Lagrangian方法进行比较，分析了高阶特征线法的有效性和适用性，并从数值试验上对分析结果进行验证．     

一类齐次对称多项式上的切比雪夫不等式

本文借助于控制不等式及数学归纳法，将著名的切比雪夫不等式推广到m次一般齐次对称多项式上(如文中定理及引理7)，并将此结果用于对称平均等．旨在展示证明解析不等式的一些有效的方法和技巧，同时为数学研究特别是高维几何研究提供一些新的有趣而有用的解析不等式．