界面态电荷对n沟6H-SiC MOSFET场效应迁移率的影响

针对界面态密度在禁带中的不均匀分布，分析了界面态电荷对n沟6H碳化硅MOSFET场效应迁移率的影响.分析结果显示，界面态电荷使n沟碳化硅器件的场效应迁移率明显降低.并给出了实验测定的场效应迁移率和反型层载流子迁移率的比值与界面态密度之间关系. 关键词： 碳化硅 界面态 反型层迁移率 场效应迁移率     

高电荷态离子40Arq+与Si表面作用中的电子发射产额

报道了在兰州重离子加速器国家实验室电子回旋共振离子源原子物理实验平台上，用高电荷态⁴⁰Ar^q+(1≤q≤12)离子作用于半导体Si固体表面时的电子发射产额实验测量.实验中，通过改变炮弹离子的电荷态和引出电压选取其不同的势能和动能，系统地研究了入射离子势能沉积和与其在固体中的电子能损对表面电子发射产额的贡献.结果表明，作为引起表面电子发射的两个主要因素，单离子的电子发射产额与炮弹离子在固体表面的势能沉积和电子能损都有近似的正比关系.     

GROWTH CHARACTERISTICS OF DIAMOND FILMS DEPOSITED ON Si AND W SUBSTRATES

Growth characteristics of diamond films synthesized by using a dc arc discharge plasma CVD were studied by means of XRD,SEM and reflection electron diffraction. The results showed that columnar growth of the diamond films was observed, the columns having an average diameter of about 15μm, with sharp and regular base edges. Diamond grains grows on the substrata were initially of uniform polygons. An interfacial transition layer of polycrystalline SiC was observed between the diamond film and Si substrate. Diamond grains grown during the early-stage on W substrate were also uniform, and an interfacial transition layer of polycrystalline WC was observed between the diamond film and the substrate.     

连续氢化法电感耦合等离子体发射光谱同时测定生物样品…

本文叙述用氢化法电感耦合等离子体发射光谱同时测定生物样品中痕量硒，砷，锡，锑的方法。比较了浓度为２．８８ｍｏｌ／Ｌ，４．８ｍｏｌ／Ｌ和６．０ｍｏｌ／Ｌ的ＨＣｌ对Ｓｅ，Ａｓ，Ｓｎ，Ｓｂ，Ｈｇ和Ｇｅ谱线强度的影响，也比较了ＮａＢＨ４溶液中ＶＣ对测定Ｓｅ，Ａｓ，Ｓｂ，Ｓｎ，Ｈｇ和Ｇｅ的影响。在４．８ｍｏｌ／Ｌ ＨＣｌ浓度下，在１％ＮａＢＨ４溶液中加０．５％ＶＣ，ＨＹ－ＩＣＰ－ＡＥＳ的检出限是：Ｓｅ ０．     

恒定磁场中物质的能量密度

本讨论了在恒定磁场中移入有限体积的物质后磁场中能量的变化，并导出了恒定磁场中的物质的能量密度表达式。