某烟草加工车间的改造加固设计

介绍了某建于1930年的烟草加工车间的改造加固情况.由于使用功能的改变,其建筑布局与相应使用荷载均有较大变化.在全面分析原结构的结构体系、构造措施、材料性能以及结构损伤等问题基础上,提出了建筑改造加固方案.对原框架梁、柱的加固以及典型节点的处理方法进行了介绍,并对屈曲约束支撑在建筑改造加固中的应用进行探讨.改造后,结构可以满足安全性、适用性要求,达到了预期加固效果,可为同类工程提供参考.     

构建《矿物岩石学》的“核特色”课程教学新体系

当前,我国地质学专业的人才培养与核工业发展紧密相连,该文针对南华大学资源勘查工程专业《矿物岩石学》课程教学改革进行了探索.提出立足本校核特色,加强实践环节,创建核特色《矿物岩石学》野外教学实习基地,完善考试制度等措施,从而达到构建《矿物岩石学》的“核特色”课程教学新体系设想.     

一期22列车乘客信息系统客室广播主机改造

通过对深圳1号线一期庞巴迪列车乘客信息系统客室广播主机内部结构及电子元器件的研究分析,对故障较高的电路部分进行改造,降低故障率。     

职业教育校地合作分析与合作路径构建研究

通过分析职业教育与地方的"粘度",剖析当前校地合作存在的"雾区",构建校地合作的路径,指出职业教育校地合作应从战略上实施"学校与政府对接,专业与企业对接,师生与农村家庭对接"宏观、中观、微观三个层面的对接,开发"政府,学校,企业,学生"四方主体的内在驱动,开展"低、小、微"合作。     

含噪运动模糊图像恢复

提出一种新算法来估计含噪图像线性运动模糊的方向和长度。结合空间域及频域分析,使用Radon变换检测运动方向,双谱模型估计运动长度,最后利用Richardson-Lucy滤波恢复清晰图像。仿真实验结果表明,对于含噪图像该算法比以往算法更优胜。基本满足图像复原的稳定性、可靠性、精度高等要求。     

虚拟空间表现系统在建筑学专业教学中的应用

该文针对基于虚拟现实技术和建筑学教学特点而建设的"虚拟空间表现系统"进行了介绍,以建筑与环境学院建筑学专业利用该系统开展的教学探索与改革为基础,总结了其在教学中的主要应用形式,并对效果、价值与前景作了分析讨论。实践证明,虚拟现实技术在建筑设计领域有广阔的应用前景,同时,"虚拟空间表现系统"本身也有很多亟待完善的问题。     

Depth resolution improvement of streak tube imaging lidar system using three laser beams

The work proposes a three-laser-beam streak tube imaging lidar system. Besides the main measuring laser beam,the second beam is used to decrease the error of time synchronization. The third beam has n+0.5 pixels' difference compared to the main measuring beam on a CCD, and it is used to correct the error caused by CCD discrete sampling. A three-dimensional(3D) imaging experiment using this scheme is carried out with time bin size of 0.066 ns(i.e., corresponding to a distance of 9.9 mm). An image of a 3D model is obtained with the depth resolution of 2 mm, which corresponds to ~0.2 pixel.     

高强度复合式训练对健美操选手体脂及组织损伤的影响研究

目的:探讨高强度训练(HIT)与高负荷训练(HVT),对健美操运动员组织损伤的影响.方法:针对健美操选手进行为期12周高强度复合式训练,并于运动前、训练中、训练后对受试者血清肌肉损伤的生化指标、体脂率等进行监测.结果:(1)高强度复合式训练能显著降低受试者体质量、体脂、甘油三酯、总胆固醇及尿素氮浓度;(2)提升血液葡萄糖、乳酸、肌酸酐浓度,增强天门冬胺酸转胺酶及肌酸激酶活性;(3)血液中的肌肉损伤指标值的提升与体脂下降率呈负相关,这暗示高强度复合式训练有利于肌肉再生,从而促使脂肪组织下降.结论:12周高强度复合式训练使健美操选手体脂明显减少、血液中肌肉损伤指标值提升,表明该训练方式可以促使肌肉再生,吸引全身含碳资源重新分配,使脂肪组织下降、肌肉组织增加,强度越高,碳资源重新分配效果越好.     

Monolithic integration of an AlGaN/GaN metalinsulator field-effect transistor with an ultra-low voltage-drop diode for self-protection

In this paper,we present a monolithic integration of a self-protected AlGaN/GaN metal-insulator field-effect transistor(MISFET).An integrated field-controlled diode on the drain side of the AlGaN/GaN MISFET features a selfprotected function for a reverse bias.This diode takes advantage of the recessed-barrier enhancement-mode technique to realize an ultra-low voltage drop and a low turn-ON voltage.In the smart monolithic integration,this integrated diode can block a reverse bias(> 70 V/μm) and suppress the leakage current(< 5 × 10-11 A/mm).Compared with conventional monolithic integration,the numerical results show that the MISFET integrated with a field-controlled diode leads to a good performance for smart power integration.And the power loss is lower than 50% in conduction without forward current degeneration.     

Optical pulse shaper with integrated slab waveguide for arbitrary waveform generation using optical gradient force

Integrated optical pulse shaper opens up possibilities for realizing the ultra high-speed and ultra wide-band linear signal processing with compact size and low power consumption. We propose a silicon monolithic integrated optical pulse shaper using optical gradient force, which is based on the eight-path finite impulse response. A cantilever structure is fabricated in one arm of the Mach–Zehnder interferometer（MZI） to act as an amplitude modulator. The phase shift feature of waveguide is analyzed with the optical pump power, and five typical waveforms are demonstrated with the manipulation of optical force. Unlike other pulse shaper schemes based on thermo–optic effect or electro–optic effect, our scheme is based on a new degree of freedom manipulation, i.e., optical force, so no microelectrodes are required on the silicon chip,which can reduce the complexity of fabrication. Besides, the chip structure is suitable for commercial silicon on an insulator（SOI） wafer, which has a top silicon layer of about 220 nm in thickness.