Fabrication and Characterization of Well-Aligned Zn1-xMnxO Nanorods

Well-Migned Zn1-xMnxO nanorods have been synthesized successfully on bare silicon substrates by a simple evaporation method without using any catalyst. X-ray diffraction and electron microscopy studies demonstrate that the as-grown nanorods are of single wurtzite phase with a preferential growth direction along their c- axes, Quantitative energy-dispersive spectrum analysis reveals that the concentration of manganese is around 4 at,%, Magnetic measurements show the single-phase Zn1-xMnxO nanorod arrays exhibiting the paramagnetic behaviour. Photolumlnescence spectra demonstrate that the Zn1-xMnxO nanorods preserve ultraviolet emission at room temperature.     

Effect of Crystalline Quality on Magnetic Properties of Mn-Doped ZnO Nanowires

The diluted magnetic semiconductor （DMS）, which exploits both the spin and the charge of car- riers, is one of the most important materials to re- alize semiconductor spintronies.Many research works have been focused on the magnetic properties of Mn-doped ZnO due to its room-temperature ferro- magnetism （RT-FM）, which is very important for commercial applications. Recently, Mn-doped ZnO nanostruetures were developed for the nano spintronic devices, and kinds of Mn-doped ZnO nanostrue- tures have been prepared with room-temperature fer- romagnetic behavior, while conflicting arguments produced no consensus on the origin of RT-FM in these systems. Vinod et al. reported that the RT-FM in 5 wt% Mn-doped ZnO nanorods is attributed to the increase in the specific area of grain boundaries and the interaction between Mn2＋ ions and Zn2＋ ions.Yihnaz et al. found that bound magnetic polarons are responsible to the RT-FM. Gao et al. reported that the exchange interaction between the donor electron trapped by the singly ionized oxygen vacancy and sur- rounding Mn ions is responsible for the RT-FM. It was also reported that the ferromagnetism of the Mn-doped ZnO nanowires could be controlled by the electric-field or Mn doping levels. This work will investigate the magnetic property of the Mn-doped ZnO nanowires grown by the chemical vapor deposi- tion （CVD） method under the air condition and under the vacuum condition, respectively, and it is found that crystalline quality plays an important role to-wards the room-temperature ferromagnetic behavior of the doped nanowires.     

利用数字式谐波反馈实现交流磁测量磁通波形正弦

在磁通正弦条件下进行软磁合金交流磁性测量可以获得高准确度的测量结果.利用数字式谐波反馈原理,通过对磁通波形的分析获得了磁通波形中的谐波含量,然后在电源输出端补偿与磁通波形中谐波幅值相反、相位相同的谐波,使磁通波形得到了改善.通过对硅钢样品在不同磁化程度时的测量,检验这一方法.当硅钢样品磁化为1.87T时,经谐波反馈后次级电压的波形系数也能满足国家标准的要求.     

Magnetic Properties of Diluted Magnetic Semiconductor Zn1-xMnxO Nanowires

Zn1-xMnxO nanowires (x = 0.035 and 0.13) have been synthesized by the vapour phase growth at 500℃. The compositional lines scanned in the energy dispersive x-ray spectroscopy (EDX) modes exhibit the homogeneous distribution of manganese in ZnO nanowires, The magnetic property measurement results show that the magnetization changes linearly with the field at high temperature, while it changes nonlinearly at low temperature,and all of the data can be well fitted by the modified Brillouin function. The magnetization of the Zn1-xMnxO nanowires show paramagnetic the behaviour for x -- 0.035 while it exhibits the ferromagnetic behaviour for x=0.13 at 5 K, which indicate that the ferromagnetism might be related to the manganese content.     

氢化对HoCu2化合物结构和磁性的影响

研究了氢化对磁性蓄冷材料HoCu2结构和磁性的影响。结果表明，HoCu2化合物吸氢后可以形成保持HoCu2化合（CeCu2型）结构不变的氢化物HoCu2Hx、或者形成具有HoH2和Cu两相结构的材料以及形成具有HoCu2Hx，HoH2，Cu三相结构的材料。氢化物HoCu2Hx的品格常数变化较小，氢含量最大的HoCu2H3.04的品格体膨胀率仅为2．27％，HoCu21-H3.04的磁性与HoCu2相比基本不变。具有HoH2和Cu两相结构的样品及具有HoCu2Hx，HoH2，Cu三相结构的样品在5K时具有磁有序结构，但是温度降到5K都未观察到磁性相变，这些材料有可能作为在5K下使用的磁性蓄冷材料。