有限秩的幂零p-群的p-自同构

设G是一个有限秩的幂零p-群,α和β是G的两个p-自同构,记I= ((αβ(g))(βα(g))-1)|g∈G),则(i)当I是有限循环群时,α和β生成一个有限P-群; (ii)当I是拟循环p-群时,α和β生成一个可解的剩余有限P-群,它是有限生成的无挠幂零群被有限p-群的扩张．     

以生活为源点的工业设计专业课题教学探究

专业课题是目前设计专业教学活动中比较有效的教学方式,它以多种形式出现在高校设计教学体系中.针对目前工业设计专业课题教学中存在的问题,突出以日常生活研究作为源点的教学理念,并探讨了其在具体设计教学实践中的实施与价值.     

Sensitivity of heavy-ion-induced single event burnout in SiC MOSFET

The energy deposition and electrothermal behavior of SiC metal-oxide-semiconductor field-effect transistor(MOSFET)under heavy ion radiation are investigated based on Monte Carlo method and TCAD numerical simulation.The Monte Carlo simulation results show that the density of heavy ion-induced energy deposition is the largest in the center of the heavy ion track.The time for energy deposition in SiC is on the order of picoseconds.The TCAD is used to simulate the single event burnout(SEB)sensitivity of SiC MOSFET at four representative incident positions and four incident depths.When heavy ions strike vertically from SiC MOSFET source electrode,the SiC MOSFET has the shortest SEB time and the lowest SEB voltage with respect to direct strike from the epitaxial layer,strike from the channel,and strike from the body diode region.High current and strong electric field simultaneously appear in the local area of SiC MOSFET,resulting in excessive power dissipation,further leading to excessive high lattice temperature.The gate-source junction area and the substrate-epitaxial layer junction area are both the regions where the SiC lattice temperature first reaches the SEB critical temperature.In the SEB simulation of SiC MOSFET at different incident depths,when the incident depth does not exceed the device's epitaxial layer,the heavy-ion-induced charge deposition is not enough to make lattice temperature reach the SEB critical temperature.     

大型先进压水堆中次锕系核素嬗变特性

随着核电事业的快速发展,核电厂卸载的乏燃料越来越多。如何处置核电站乏燃料中的次锕系核素（MA）既是核燃料再利用的重要过程,又是闭式循环中的关键步骤。如果处置得当,不仅可以提高燃料的利用率,而且可以将MA变成同位素燃料电池、中子源等有用的核素。国际上认可的处置方法是分离-嬗变,但是嬗变MA的难点是嬗变堆型的选取和如何提高嬗变率。压水堆(PWR)是国内外最成熟的堆型和商业运行的主要堆型,也是现阶段最具有可能进行MA嬗变的堆型。于是,本文利用MCNP程序研究了压水堆嬗变MA的特性,通过研究MA嬗变棒的设计、添加位置和添加量等对压水堆堆芯有效增殖因子的影响,初步探索出最佳的压水堆嬗变MA的设计方案,为我国现阶段进行压水堆嬗变MA奠定了理论基础。     

Chaos in fractional-order generalized Lorenz system and its synchronization circuit simulation

The chaotic behaviours of a fractional-order generalized Lorenz system and its synchronization are studied in this paper. A new electronic circuit unit to realize fractional-order operator is proposed. According to the circuit unit, an electronic circuit is designed to realize a 3.8-order generalized Lorenz chaotic system. Furthermore, synchronization between two fractional-order systems is achieved by utilizing a single-variable feedback method. Circuit experiment simulation results verify the effectiveness of the proposed scheme.     

Calculation of the reactor neutron time of flight spectrum by convolution technique

It is a very complex and time-consuming process to simulate the nuclear reactor neutron spectrum from the reactor core to the export channel by applying a Monte Carlo program. This paper presents a new method to calculate the neutron spectrum by using the convolution technique which considers the channel transportation as a linear system and the transportation scattering as the response function. It also applies Monte Carlo Neutron and Photon Transport Code （MCNP） to simulate the response function numerically. With the application of convolution technique to calculate the spectrum distribution from the core to the channel, the process is then much more convenient only with the simple numerical integral numeration. This saves computer time and reduces some trouble in re-writing of the MCNP program.     

空间弥散X射线对脉冲星导航精度的影响

基于RXTE卫星天基数据,建立了时空坐标系转换、时间修正及历元折叠方法,构建了用于提取导航信息的Crab脉冲星轮廓,剖析了该天基载荷结构及特性,对卫星运行空间背景辐射进行了模拟计算。结果表明,在设定导航条件下,空间弥散X射线对航天器单星定轨及多星定位影响在km量级以上。同时阐述了实用化脉冲星导航探测中,改进导航定位精度急需注意的技术问题。     

两种消解法测定烟用接装纸中铬、铅和镉的比较

采用两种不同的样品消解法消解烟用接装纸样品,并采用电感耦合等离子体-发射光谱仪测定了其中的3种有害元素铬、铅和镉的含量,通过几组样品的测定结果对比,证明两种样品前处理方法均可用于实际样品测定.     

新型反对称涡气膜冷却结构设计及其数值研究

针对中.高吹风比下容易产生反向涡对的问题,为了改善中、高吹风比下气膜孔的冷却效率,进行了新型抗涡气膜孔的设计和研发工作.根据造型参数不同,设计了四种新型反对称涡气膜孔结构,首先研究了不同几何结构的新型气膜冷却孔对平板气膜冷却特性的影响.然后将反对称涡新型气膜冷却结构运用于叶栅端壁,前缘冷却孔排采用了不同冷却结构的单,双...