Strong and broadband terahertz absorber using Si02-based metamaterial structure

We design and experimentally demonstrate a broadband metamaterial absorber in the terahertz （THz） band based on a periodic array of aluminum （A1） squares with two different sizes. A thin silicon dioxide （SiO2） film rather than a conventional polyimide （PI） layer is used as a dielectric spacer to separate A1 squares from the platinum （Pt） ground plane in our design, which significantly improves the design precision and the feasibility of the device fabrication. The combination of different sizes of AI squares gives rise to an absorption bandwidth of over 210 GHz with an absorption of over 90%. Our results also show that our device is almost polarization-insensitive. It works very well for all azimuthal angles with an absorption of beyond 80%.     

激光偏振性的量子理论与实验研究

本文建立了激光偏振性的全量子理论。分析了各向异性腔中多模运转下激光束的偏振特性。给出He-Ne激光器在6328振荡谱线上各模相互间角度随各向异性变化的基本方程、计算曲线及偏振组态。本文还给出了由应力导致相位各向异性对模式偏振性影响的实验结果。理论分析与实验结果相符。     

激光二极管泵浦单频连续工作的Nd：YAG激光器

在国内首次报道了激光二极管泵浦单频连续工作的Ｎｄ：ＹＡＧ激光器，采用扭摆模腔技术方法，在８０８ｎｍ激光二极管连续泵浦下，取得１０６４ｎｍ连续单频工作，输出功率５５ｍＷ的结果，泵浦阈值２７６ｍＷ，斜率效率２３％，线宽小于２５ＭＨｚ（受仪器测量精度限制）。     

混沌群作用

§ 1　ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｉｓｐａｐｅｒｉｓｔｈｅｓｅｑｕｅｌｔｏ[1 ,2 ].Ｃａｉｒｎｓｅｔａｌ.[1] ｉｎｔｒｏｄｕｃｅｄｔｈｅｎｏｔｉｏｎｏｆａｃｈａｏｔｉｃｇｒｏｕｐａｃｔｉｏｎａｓａｇｅｎｅｒａｌｉｚａｔｉｏｎｏｆｃｈａｏｔｉｃｄｙｎａｍｉｃａｌｓｙｓｔｅｍｓ(ｓｅｅｄｅｆｉｎｉｔｉｏｎｂｅｌｏｗ) .Ｔｈｅｙｓｈｏｗｅｄｔｈａｔｔｈｅｃｉｒｃｌｅｄｏｅｓｎｏｔａｄｍｉｔａｃｈａｏｔｉｃａｃｔｉｏｎｏｆａｎｙｇｒｏｕｐ ,ａｎｄｃｏｎｓｔｒｕｃｔｅｄａｃｈａｏｔｉｃａｃｔｉｏｎｏｆＧ =Ｚ×…     

快速发光二极管的性能与分析

本文叙述了用于光通信快速、高辐射度GaAs/GaAlAs双异质结发光管的性能.其电带宽大于60MHz,光带宽在100MHz以上.在200mA辐射度为1017W/cm2·sr.尾纤输出超过160μw(NA=0.2).分析和讨论了影响辐射输出和调制能力的诸因素,并选取了最佳折衷方案.     

利用可见-近红外-中红外超快光谱揭示离子交换法制备的少层MoS2中缺陷介导的载流子动力学

本文结合可见-近红外-中红外瞬态吸收光谱技术对离子交换法制备的少层MoS₂中缺陷介导的载流子动力学进行了详细的解析. 在近红外瞬态吸收光谱中观察到的宽带漂白信号表明少层MoS₂纳米片带隙中分布着大量的缺陷态. 实验结果明确揭示了载流子被缺陷态的快速捕获以及进一步的复合过程,证明带隙中的缺陷态对MoS₂光生载流子动力学过程起着至关重要的作用. 在中红外瞬态吸收光谱中观察到的正信号到负信号的转变进一步证实了在导带下小于0.24 eV处存在被载流子占据的缺陷态. 这些在少层MoS₂纳米片中存在的缺陷态可以作为有效的载流子捕获中心来辅助光生载流子在皮秒时间尺度内完成非辐射复合过程.     

噪声环境中两粒子纠缠态的纠缠消相干

借助于共生纠缠度和输入输出保真度考察了初始处于纠缠态的两粒子在联合噪声环境中的消纠缠特性。结果表明：两粒子纠缠态可分为相干保持态和脆弱纠缠态，对于脆弱纠缠态分析了它们在低温条件欧姆型耗散下的纠缠消相干演化动力学。     

Generation of Two-Atom Cluster State via Cavity QED

We propose a physical scheme for generating a two-atom cluster state through the simultaneous interaction of two two-level atoms with a single-mode cavity field prepared initially in an odd-coherent state under a large-detuned limit. The influence of the dissipation constant, the intensity of the field and the imperfect manipulation on the preparation scheme are investigated. It is shown that when the intensity of the cavity is large enough, the influence of the cavity decay is ettlciently suppressed. The possible error in the implementation of the cluster state is negligible when the time difference between two atoms crossing the cavity axis is small. It is suggested that the scheme can be realized by current technologies.     

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.     

2.45 GHz ECR离子源的微波阻抗匹配

ECR离子源的等离子体阻抗对其微波传输与阻抗匹配设计至关重要。在中国科学院近代物理研究所现有的2.45 GHz ECR 质子源上,对等离子体阻抗进行了测量。首先用水吸收负载代替等离子体负载测量得到了所用微波窗阻抗,然后根据质子源测量数据,推算得到了等离子体阻抗。实验结果表明,脊波导输出端阻抗与后续负载不完全匹配,等离子体阻抗随微波功率变化呈非线性。这些结果为ECR离子源过渡匹配和微波窗的设计提供了参考依据。Plasma impedance of an ECR ion source is important for microwave transmission and impedance matching design. Plasma impedance was measured indirectly with the 2.45 GHz ECR proton source at the Institute of Modern Physics, Chinese Academy of Sciences. In the test, we got microwave window mpedance by using water absorption load instead of plasma load, and the source plasma impedance was derived from the test data with the 2.45 GHz ECR proton source and microwave window impedance. The experimental results show that ridge waveguide output impedance and the subsequent load does not exactly match, plasma impedance variation is nonlinear with microwave power. The achievedresult is useful in the design of ridged waveguide and microwave window.