二胡音色的定量分析和一种改进方案

文章利用三色激励值和音色明亮度对二胡高低把位的音色一致性进行了定量分析,提出了一种可能的改善方案。其核心就是,利用空心琴杆和封闭琴桶,形成耦合程度可调的、一个亥姆霍茨谐振腔和一个类似竖笛的管状谐振腔的组合。测量了改造前后二胡的音色变化,并提出了进一步研究的建议。     

Eu3+摩尔浓度对Y2O2S:Eu3+,Mg2+,Ti4+红色长余辉材料光谱的影响

用高温固相法制备了Y2O2S：Eu^3 ,Mg^2 ,Ti^4 红色长余辉材料。测量了该材料的余辉曲线,余辉时间为1h以上;由X射线衍射得到晶体结构为Y2O2S.测量了不同Eu^3 摩尔浓度下的激发光谱和发射光谱,得到从^5DJ(J=0,1,2,3)^-7FJ(J=0,1,2,3,4,5)的发射谱线,并得到位于260,345,468和540nm激发峰。由于激活剂饱和效应,Y2O2S：Eu^3 ,Mg^2 ,Ti^4 发射光谱中513．6,540．1,556．4,587．3和589．3nm属于从^5D2,^5D1到^7FJ(J=0,1,2,3,4)跃迁的发射峰随Eu^3 摩尔浓度的增加相对削弱;激发谱包括位于350nm左右属于电荷转移态吸收(Eu^3 -O^2-,Eu^3 -S^2 )的激发主峰和在可见光区位于468,520和540nm属于Eu^3 离子4f-4厂吸收的激发峰。随着Eu^3 摩尔浓度的增加,位于468,520和540nm的激发峰相对增强。     

Engineering Double-Walled Carbon Nanotubes by Ar Plasma

Double-walled carbon nanotubes （DWCNTs） have been found to be promising nano-materials for nano-mechanical and nano-electrical devices due to their double-walled structures. Modifying DWCNTs would be one of the key technologies for device construction. We demonstrate engineering the geometry of DWCNTs by etching with Ar plasma. The characterization by atomic force rnicroscopy indicates that single atomic carbon layers could be removed from DWCNTs by Ar plasma. The etching effect is further investigated by electrical measurements on DWCNT field-effect transistors, which allow us to study the interwall screen effect as well.     

Study on electrical defects level in single layer two-dimensional Ta_2O_5

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta_2O_5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta_2O_5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta_2O_5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta_2O_5,exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta_2O_5.     

圆形截面微通道的双一阶彩虹现象研究

基于几何光学理论及Debye理论,研究圆形截面微通道这一双层圆柱产生的双一阶彩虹现象。由于全反射现象,双一阶彩虹并非始终存在,故通过数值模拟,得出内外径比的临界值来判断双一阶彩虹的存在性。当双一阶彩虹存在时,双一阶彩虹中的彩虹总是可被观察到;彩虹在某些情况下会因光强较弱而被淹没在以二阶彩虹为主的其他散射结构中。研究发现彩虹位于二阶彩虹主峰右侧时,其可被观测到。为此分析彩虹与二阶彩虹两者主峰散射角重叠这一临界情况,进而提出判断彩虹能否被被观测到的方法。最后,构建实验系统,以充满去离子水的高硼硅玻璃毛细管为对象进行实验研究,通过CCD相机拍摄彩虹图像。结果表明,毛细管内径为550 m、外径为600 m时,其内外径比大于上述临界值0.7485,故双一阶彩虹存在。但是由上述判断方法得出彩虹无法被观测到,这一结论与仅能从拍摄图像中获得彩虹结构的现象相符。     

基于经典小波变换的布里渊光时域反射计光信号处理

布里渊光时域反射计结构的布里渊散射分布式光纤传感器检测的是自发散射光,信号非常微弱,而且频带在几十兆赫兹以上,难以应用普通相干解调方法。针对传感散射光信号特点,提出基于经典(Morlet)小波变换的光相干检测方法。首先采用微波电光调制产生频移参考光和自发布里渊散射光进行相干检测,再应用经典小波变换进行散射光信号的幅度解调,得到信噪比改善的布里渊散射传感光信号。给出了数值模拟和实验数据处理结果,表明经典小波变换能较好地处理布里渊光时域反射计检测信号。并和基于希尔伯特(Hilbert)变换的传感信号处理方法进行了对比,发现此方法优于基于希尔伯特变换的信号处理。     

Fourth-Order Spatial Correlation of Thermal Light

We investigate the fourth-order spatial correlation properties of pseudo-thermal light in the photon counting regime, and apply the Klyshko advanced-wave picture to describe the process of four-photon coincidence counting measurement. We deduce the theory of a proof-of-principle four-photon coincidence counting configuration, and find that if the four randomly radiated photons come from the same radiation area and are indistinguishable in principle, the fourth-order correlation of them is 24 times larger than that when four photons come from different radiation areas. In addition, we also show that the higher-order spatial correlation function can be decomposed into multiple lower-order correlation functions, and the contrast and visibility of low-order correlation peaks are less than those of higher orders, while the resolutions all are identical. This study may be useful for better understanding the four-photon interference and multi-channel correlation imaging.     

均一球形PDP用荧光粉(Y,Gd)BO3:Eu的合成

利用共沉淀法通过控制稀土离子浓度、沉淀温度等得到稀土氧化物前驱体沉淀,再将其和H3BO3按化学计量比混合煅烧制备出了平均粒径在0．5～1．0μm的球形、粒径分布较小和无团聚的(Y,Gd)BO3：Eu荧光粉,其性能在一些方面优于商用荧光粉。利用X射线衍射、SEN、粒度分析仪和PL光谱进行表征。研究了不同的煅烧温度对荧光粉性能的影响,结果发现用本实验方法在800℃煅烧即可得到纯相的(Y,Gd)BO3：Eu。而传统固相合成纯相的(Y,Gd)BO3：Eu反应温度高达1200℃。因本方法工艺较易控制,适于在工业生产上推广。     

用于FED和PDP平板显示高压驱动电路的CMOS器件

在Synopsys TCAD软件环境下,结合中国科学院微电子研究所0.8μm标准CMOS工艺条件对于高压CMOS器件进行了工艺和器件模拟。由于考虑到与标准CMOS工艺的兼容性,高压CMOS器件均采用LDMOS结构;根据RESURF技术,对于器件的漂移区进行了优化。器件模拟结果表明,高压NMOS器件源漏击穿电压为220 V;阈值电压和驱动能力分别为0.8 V和1×10-4A/μm。高压PMOS器件源漏击穿电压为-135 V;阈值电压和驱动能力分别为-9.7 V和1.8×10-4A/μm。高压CMOS器件的研制可为进一步研制FED和PDP平板显示高压驱动电路奠定基础。     

相干多普勒测风激光雷达

 鉴于多普勒测风激光雷达在航空航天、遥感遥测、气象观测等军事及民用领域中的广泛应用,结合相干探测工作原理,介绍了国外几种典型波段相干多普勒测风激光雷达系统,重点分析了激光发射机/接收机、空间扫描、数据处理等关键技术,并对相干多普勒激光雷达的广阔应用前景进行了展望。指出国内相干多普勒测风激光雷达研究已取得的一些重要进展。