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本文利用化学气相沉积法高温分解甲烷在铜箔上制得单层石墨烯薄膜, 测量了石墨烯的拉曼光谱. 将石墨烯薄膜逐层转移到光纤跳线的氧化锆插芯端面上做成可饱和吸收材料, 实验研究了环形腔掺铒光纤脉冲激光器的输出特性, 获得了峰值波长为1560.1 nm, 3 dB带宽为0.27 nm, 重复频率为7.69 MHz, 脉冲宽度为58.8 ps 的锁模脉冲序列. 时间带宽积为1.98, 表明脉冲出现了啁啾. 最后, 通过改变两个光纤活动接头之间的空气腔的长度, 激光波长实现了4 nm的调谐.
关键词:
光纤激光器
石墨烯
锁模 相似文献
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本文在背景Ar气压力为8×104Pa、温度为1800~2000℃的条件下,对升华法生长SiC单晶的籽晶进行了原位退火处理,利用原子力显微镜和光学显微镜对退火后的6H-SiC晶片表面进行了观察,研究了退火温度和时间对晶片表面的影响.发现经过退火处理后的籽晶表面存在规则的生长台阶,有助于侧面生长模式的发展,进一步有助于台阶流生长模式的发展.通过对籽晶的退火处理,降低了螺旋生长中心的密度,从而减少多型夹杂、小角度晶界和微管等缺陷的出现,提高了晶体质量. 相似文献
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Choice of crucible material is a key issue during the growth of AlN crystal. The stabilities at high temperature and life-spans of boron nitride (BN) crucible,tantalum (Ta) crucible and tungsten (W) crucible were compared. Tantalum crucible behaved worse at high temperature and life-span was shortened as compared with the other two crucible materials. It was very crisp and easy to crack. In contrast,self-seeded AlN crystals with different morphologies could be obtained at different high temperatures using BN crucible. The boron nitride crucible was stable below 2200 ℃,above which it would decompose. Thus it was unsuitable for the bulky AlN crystal growth. Tungsten crucible could endure the temperatures higher than 2200℃. Unfortunately we could only get AlN polycrystallines using tungsten crucible. After 50~100 hours’ run,the crucible was destroyed completely due to the multiple deep cracks. XRD results of destroyed tungsten crucible indicated that the main phases are tungsten carbide and tungsten nitride. 相似文献