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Bulk metallic glasses are prepared in Pd4o.sNi4o.sSixP19-x (x = 0-14 at.%) alloys by a combination of flux treatment and water quenching technique. It is found that the thermal stability of the Pd4o.sNi4o.sSixP19=x glassy alloys depends on the addition of Si content. Among the Pd4o.sNi4o.sSixP19=x glassy alloys studied, the Pd4o.sNi4o.sSisPls bulk metallic glass exhibits the largest supercooled liquid region (△T = 119 K) and the highest activation energy of crystallization (283.3k J/tool), showing enhanced glass formation ability and extraordinary glassy thermal stability. 相似文献
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Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.90/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling 下载免费PDF全文
Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.90/ZnO heterostructare grown on a sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.90 layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with xmin = 5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal (1213) axis in the {1010} plane of both ZnO and MgZnO layer, the tetragonal distortion εT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of εT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer. 相似文献
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Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscopy, X-Ray Diffraction and Rutherford Backscattering 下载免费PDF全文
The composition, elastic strain and structural defects of InCaN/CaN multiple quantum wells (MQWs) are comparatively investigated by using x-ray diffraction (XRD), transmission electron microscopy and Rutherford backscattering/channelling. The InGaN well layers are fully strained on CaN, i.e. the degree of relaxation is zero. The multilayered structure has a clear defined periodic thickness and abrupt interfaces. The In composition is deduced by XRD simulation. We show how the periodic structure, the In composition, the strain status and the crystalline quality of the InGaN/GaN MQ, Ws can be determined and cross-checked by various techniques. 相似文献
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Dual-channel phase-shifting interferometry for simultaneous phase microscopy is presented. Red and blue light beams are used for microscope illumination. A 45 tilted beamsplitter replicates the object and reference waves in red light together with the object wave in blue light into two parallel beams. The two resulting quadrature phase-shifting interferograms in red light and the object waves in blue light are generated in the two channels. The two interferograms are recorded simultaneously by a color charge-coupled device (CCD) camera, and can be separated via RGB components of the recorded color patterns without crosstalk. As a result, the phase of tested specimen can be retrieved. The feasibility of the proposed method is demonstrated by test performed on a microscopic specimen. 相似文献
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Measurement and Analysis of Composition and Depth Profile of H in Amorphous Si1-xCx:H Films 下载免费PDF全文
Composition in amorphous Si1-xCx:H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0.45-3.57) and the depth profile of hydrogen in the thin films are characterized by Rutherford backscattering spectrum (RBS), resonance-nuclear reaction analysis (R-NRA) and elastic recoil detection (ERD), respectively. In addition, the depth profile of hydrogen in the unannealed thin films is compared to that of the annealed thin films with rapid thermal annealing (RTA) or laser spike annealing (LSA) in nitrogen atmosphere. The results indicate that the stoichiometric amorphous SiC can be produced by PECVD when the ratio of CH4/SiH4 is approximately equal to 25. The content of hydrogen decreases suddenly from 35% to 1% after 1150℃ annealing. RTA can reduce hydrogen in SiC films effectively than LSA. 相似文献