界面自组装的金/氧化石墨烯复合材料的表面增强拉曼散射行为研究

采用Frens法制备金纳米粒子溶胶,通过界面自组装技术在掺磷的非晶碳衬底表面构筑三维的金/氧化石墨烯/金复合结构.以罗丹明B为探针分子,考察金/氧化石墨烯/金复合材料的表面增强拉曼散射活性.结果表明,由于氧化石墨烯的化学增强和金纳米粒子的电磁场增强的协同作用,在该三维复合材料上获得了很强的罗丹明B拉曼信号.所设计的三维金/氧化石墨烯/金复合材料在生物分析、环境监测、疾病防控、食品安全等领域具有潜在的应用价值.     

Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation

Solar-blind ultraviolet photodetectors with metal-semiconductor-metal structure were fabricated based on β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ film grown by metal-organic chemical vapor deposition. It was known that various surface states increase dark current and a large number of defects can hinder the transport of carriers, resulting in low switching ratio and low responsivity of the device. In this work, β -(Al_0.25Ga_0.75)₂O₃ films are used as surface passivation materials. Owning to its wide band gap, we obtain excellent light transmission and high lattice matching with β -Ga₂O₃. We explore the change and mechanism of the detection performance of the β -Ga₂O₃ detector after β -(Al_0.25Ga_0.75)₂O₃ surface passivation. It is found that under the illumination with 254 nm light at bias 5 V, the β -(Al_0.25Ga_0.75)₂O₃/β -Ga₂O₃ photodetectors show dark current of just 18 pA and high current on/off ratio of 2.16×10⁵. The dark current is sharply reduced about 50 times after passivation of the β -Ga₂O₃ surface, and current on/off ratio increases by approximately 2 times. It is obvious that β -Ga₂O₃ detectors with β -(Al_0.25Ga_0.75)₂O₃ surface passivation can offer superior detector performance.     

四价离子M（M=Mn,Pr,Sn,Zr,Se,Te）掺杂对CeO_2氧化还原性能的影响

于考虑了Ce-4f电子之间强关联作用PBE＋U方案,采用第一性原理计算方法系统研究了掺杂Mn,Pr,Sn,Zr,Se和Te等对CeO2原子结构、电子结构和还原性能影响.针对形氧空位后掺杂离子对体系中电子转移影响,提出了两种不同制：对于Zr,Se和Te等掺杂CeO2,氧空位形能的降低主要是受到氧空位形后结构扭曲影响;而对于Mn,Pr和Sn等掺杂体系,氧空位形能受到结构扭曲和电子转移双重影响,因此,氧空位形后电子首先转移到掺杂离子上而不是通常的Ce4＋上.研究发现,当四价掺杂离子到电子后最外层电子全满或半满结构时,氧空位形时所产生的电子会优先转移到掺杂离子上.     

Coupling interaction between a single emitter and the propagating surface plasmon polaritons in a graphene microribbon waveguide

The coupling interaction between an individual optical emitter and the propagating surface plasmon polaritons in a graphene microribbon （GMR） waveguide is investigated by numerical calculations, where the emitter is situated above the GMR or in the same plane of the GMR, The results reveal a multimode coupling mechanism for the strong interaction between the emitter and the propagating plasmonic waves in graphene. When the emitter is situated in the same plane of the GMR, the decay rate from the emitter to the surface plasmon polaritons increases more than 10 times compared with that in the case with the emitter above the GMR.     

Eu掺杂TbMnO3多晶材料的介电性质

采用固相反应法制备了Tb_0.8Eu_0.2MnO₃多晶材料.对样品的X射线衍射（XRD）分析表明Eu³⁺固溶于TbMnO₃中.测量了样品在低温(100 K ≤T≤ 300 K)和低频下(200 Hz≤f≤100 kHz)的复介电性质.在此温度区间内发现了两个介电弛豫峰.经分析认为低温峰（T≈170 K）起源于局域载流子漂移引起的偶极子极化效应,而高温峰（T≈290 K）则是由离子电导产生的边界和界面层的电容效应引起的.电阻率的测量显示在低温下（T≈230 K）存在明显的导电机制转变. 关键词： 多铁性材料 掺杂 介电性质     

FIB快速加工纳米孔点阵的新方法

纳米尺度的点阵在纳米器件和基础科学研究方面都具有非常重要的应用.目前普遍采用的聚焦离子束和电子束曝光技术可以很方便的在衬底上加工纳米量级的微细结构，但大面积的图形加工过程需要花费太多的机时.介绍一种利用设计图形BMP文件的像素点阵和实际加工区域之间的匹配关系，通过聚焦离子束加工获得所需要的纳米孔点阵的新方法.采用这种方法可以在短时间内获得大面积的纳米点阵结构. 关键词： 聚焦离子束 电子束曝光 纳米孔点阵     

掺杂水平对ZnO基变阻器电学性能的影响

根据相图规则设计、制备了三个系列不同Bi₂O₃与Sb₂O₃掺杂水平的ZnO基复合变阻器材料,研究了掺杂对氧化锌复合陶瓷电学性能的影响.研究发现,当Sb元素掺杂水平较低时,随着Sb₂O₃掺杂量的增加,所得氧化锌基变阻器材料漏电流的变化也很小,非线性系数(非线性系数α_L和击穿非线性系数α_B)将减小,而场强(场 关键词： 氧化锌 掺杂 复合陶瓷变阻器 电学性质     

Fabrication and Characterization of YBa2Cu3Oy Superconducting Nanowires

Ordered YBa2Cu3Oy nanowires have been fabricated by filling YBa2Cu3Oy melting liquid into the pores of the anodized alumina templates. X-ray powder diffraction proves that YBa2Cu3Oy nanowires crystallized in the Y-123 structure. The temperature dependence of ac susceptibility indicates a superconducting transition at 91 K for the YBa2Cu3Oy nanowire array.     

BiFeO_3结构性质与相转变的第一性原理研究

采用基于密度泛函理论的第一性原理计算,系统地研究了BiFeO3的7种不同空间群(R3c,R3m,P4mm,Cm,Pm3m,R3m和R3c)结构及其转变关系.结果表明,铁电相R3c结构是基态,不同结构之间也存在着一定的转变关系,其变化主要包括两种形式,在[111]方向上Bi3+相对FeO6八面体存在一定的位移和FeO6八面体绕[111]极化轴的反铁扭曲旋转.此外,还得出BiFeO3的薄膜结构受到衬底结构的作用会导致其从三方相(R3c)向四方相(P4mm)转变.     

La2／3Ca1／3MnO3掺Bi的磁电阻行为

研究了Ｌａ（２－ｘ）Ｂｉｘ／３Ｃａ１／３ＭｎＯ３体系的电阻行为和磁性转变，当ｘ＝０．０，０．２时，样品表现为铁磁转变，居里温度Ｔｃ分别为２６５Ｋ和２４５Ｋ，铁磁转变伴随着半导体－金属转变，对应于磁电阻效应的极大值；当ｘ＝０．４时，样品表现为复杂的磁性转变，样品的电阻率为半导体特性，对应的磁性转变没有半导体，金属转变发生，在ｘ＝０．４和０．６两个样品中，１Ｔ外场下８５Ｋ时获得大于８６％的巨磁电阻效应