A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response

A 4$times $4 beta-phase gallium oxide ($beta $-Ga$_{2}$O$_{3}$) deep-ultraviolet (DUV) rectangular 10-fingers interdigital metal-semiconductor-metal (MSM) photodetector array of high photo responsivity is introduced. The Ga$_{2}$O$_{3}$ thin film is prepared through the metalorganic chemical vapor deposition technique, then used to construct the photodetector array via photolithography, lift-off, and ion beam sputtering methods. The one photodetector cell shows dark current of 1.94 pA, photo-to-dark current ratio of 6$times $10$^{7}$, photo responsivity of 634.15 A$cdot$W$^{-1}$, specific detectivity of 5.93$times $10$^{11}$ cm$cdot$Hz$^{1/2}cdot$W$^{-1}$ (Jones), external quantum efficiency of 310000%, and linear dynamic region of 108.94 dB, indicating high performances for DUV photo detection. Furthermore, the 16-cell photodetector array displays uniform performances with decent deviation of 19.6% for photo responsivity.     

尺寸效应对庞磁电阻材料La0.67Ca0.33MnO3输运性能的影响

采用脉冲电子束沉积技术在(100)取向单晶钛酸锶衬底上沉积出具有高取向的La_0.67Ca_0.33MnO₃薄膜, 并用电子束曝光技术获得不同宽度的微桥结构, 对这些微桥结构的输运性能进行了研究. 当微桥的宽度为2和1.5 μm时, 与大面积薄膜相比, 其金属绝缘体转变温度T_P变化不大. 当微桥的宽度为1 μm时, T_P降低约50 K. 当微桥宽度减小到500 nm以下, 没有观察到金属-绝缘体转变. 对不同宽度微桥的磁电阻曲线进行分析发现, 随着微桥宽度减小, 低场磁电阻也变 小, 高场磁电阻变化不大.     

大规模制备Ni80Fe20纳米线阵列及其磁学特性研究

利用电化学沉积方法在高度有序纳米孔氧化铝模板中大规模制备了Ni80 Fe20纳米线阵列.该方法得到的Ni80Fe20纳米线产率高(约1012-1013/cm2),而且这些纳米线阵列具有(111)择优生长取向和很高的纵横比.与体材料相比,这些Ni80Fe20纳米线阵列具有更高的矫顽力和较大的剩磁比等性能,在微型磁性元件领域将具有广泛应用前景.     

La1.8Sr0.2CuO4/La1.9Sr0.1CuO4超导双层薄膜的制备及电学输运性能研究

采用Nd:YAG固体激光器在SrTiO3(STO)衬底上成功制备了具有c轴取向的过掺杂La1.8Sr0.2CuO4和欠掺杂La1.9Sr0.1CuO4超导薄膜。分别对薄膜的晶体结构、电学输运性能进行了研究。通过晶体结构分析表明超导薄膜沿<001>晶向生长,沉积后的薄膜超导转变温度(TC)随着薄膜厚度(20～200 nm)的增加而逐渐升高,显示薄膜由二维特征向三维特征过渡。在双层薄膜La1.8Sr0.2CuO4/La1.9Sr0.1CuO4结构中,其电学输运性能和所加电场的方向有很大关联,反映出电场的方向影响了超导薄膜中空穴载流子的扩散,进而影响了薄膜的超导转变温度和电学输运性能。     

(La0.7Sr0.3MnO3 )m(BiFeO3)n 超晶格结构的导电机理

利用射频磁控溅射的方法在SrTiO₃(001) 基片上制备了(La_0.7Sr_0.3MnO₃)_m(BiFeO₃)_n超晶格结构.对所制备的超晶格结构进行了50—150℃温度范围内的电流-电压测试分析.结果表明,随着BiFeO₃薄膜的厚度减小,温度的升高,(La_0.7Sr_0.3MnO₃)_m(BiFeO₃)_n超晶格结构的电流变大.进一步根据介质导电模型对(La_0.7Sr_0.3MnO₃)_m(BiFeO₃)_n超晶格结构的导电特性做了分析.在温度较低或者电场较弱时,所制备的(La_0.7Sr_0.3MnO₃)_m(BiFeO₃)_n超晶格结构表现为欧姆导电,而在高温,高电场的情况下,其导电行为由空间电荷限制电流机理主导. 关键词： 超晶格薄膜 多铁 空间电荷限制电流     

First-principles investigation of the electronic structure and magnetism of eskolaite

The electronic structure and magnetism of eskolaite are studied by using first-principles calculations where the on-site Coulomb interaction and the exchange interaction are taken into account and the LSDA+U method is used. The calculated energies of magnetic configurations are very well fitted by the Heisenberg Hamiltonian with interactions in five neighbour shells; interaction with two nearest neighbours is found to be dominant. The Néel temperature is calculated in the spin-3/2 pair-cluster approximation. It is found that the measurements are in good agreement with the calculations of lattice parameters, density of states, band gap, local magnetic moment, and the Néel temperature for the values of U and J that are close to those obtained within the constrained occupation method. The band gap is of the Mott--Hubbard type.     

外电场作用下ZnO分子的结构特性研究

本文以6-311++g(d,p)为基组, 采用密度泛函理论的B3P86方法优化得到了ZnO分子的基态稳定构型, 并计算了不同外电场(-0.05–0.05a.u.)下ZnO基态分子的稳定电子结构, 研究外电场对ZnO基态分子键长、总能量、电荷分布、能级分布、能隙及红外光谱的影响. 结果表明: 外加电场的大小和方向对分子结构和电子特性均有明显影响. 随着正向外加电场的增加, ZnO基态分子的平衡键长先减小后增加, 而分子总能量、振动频率和红外光谱的强度均先增加后减小. 分子的最高占据轨道能量E_H、最低未占据轨道能量E_L和能隙E_g始终处于减小趋势, 因而占据轨道的电子更容易被激发至空轨道. 这一结果可为ZnO分子的电致发光机理研究提供一定的理论参考. 关键词： ZnO 外电场 结构参数 激发     

Enhancing low-field magnetoresistance of La0.67Ca0.33MnO3 films deposited on anodized aluminium-oxide membranes

In this paper we report a new method to fabricate nanostructured films, La0.67Ca0.33MnO3 （LCMO） nanostructured films have been fabricated by using pulsed electron beam deposition （PED） on anodized aluminium oxide （AAO） membranes, The magnetic and electronic transport properties are investigated by using the Quantum Design physics properties measurement system （PPMS） and magnetic properties measurement system （MPMS）. The resistance peak temperature （Tp） is about 85 K and the Curie temperature （To） is about 250 K for the LCMO film on an AAO membrane with a pore diameter of 20nm. Large magnetoresistance ratio （MR） is observed near Tp. The MR is as high as 85% under 1 T magnetic field. The great enhancement of MR at low magnetic fields could be attributed to the lattice distortion and the grain boundary that are induced by the nanopores on the AAO membrane.     

T+OD体系的同位素交换反应动力学

基于DTO(Χ¹ A₁)分子的多体展式分析势能函数,用准经典的Monte Carlo轨迹法研究了T+OD(0,0)体系的分子反应动力学过程. 结果表明,在碰撞能较低(小于121.34 kJ ·mol^-1)时,可以生成长寿命DTO(Χ¹ A₁)络合物,并且该络合反应是有阈能反应,这与用多体项展式理论计算的DTO分子势能曲线结果一致. 随碰撞能增加,逐渐出现置换产物DT和OT,最终分子被完全碰散成D,T和O原子,而且反应T+OD(0,0)→OT+D,T+OD(0,0)→DT+O和T+OD(0,0)→D+T+O也是有阈能反应. 由于D和T原子的同位素效应,T+OD(0,0)与D+OT(0,0)体系的碰撞反应特征存在非一致性. 关键词： DTO 分子反应动力学 轨线 反应截面     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导