基于单单纯形法的模板优选研究

利用半单纯形法研究了建筑结构施工中各类模板的最优选取问题,建立了各类模板最优组合的数学模型及求解算法。对实际问题的算例表明该方法非常有效。     

基于图像传感器在线铁谱仪的实验研究

介绍了一种新型在线铁谱仪的原理，性能和试验结果，该仪器通过DSP计算遮光面积百分比，磨损指数以及分类特征大磨粒，能够判断被监测机器的磨损状态并预报异常磨损，试验结果表明，所研制的仪器能较好地满足在线磨损检测的要求。     

Pressure—Induced Shifts of Energy Spectra of α—Al2O3：Mn^4＋

By making use of the diagonalization of the complete d^3 energy matriz in a trigonally distorted cubic-field and the theory of pressure-induced shifts (PS) of energy spectra,the whole energy spectrum of α-Al2O3:Mn^4 and PS of levels have been calculated.All the calculated results are in excdellent agreement with the experimental data.The comparison between the results of α-Al2O3:Mn^4 and ruby has been made.It is found that on one hand,R1-line and R2-line PS of α-Al2O3:Mn^4 and ruby are linear in pressure over 0-100 kbar,and their values of the principal parameter for PS are very close to each other.On the other hand,the sensitivities of R1-line and R2-line PS of α-Al2O3:Mn^4 are higher than those of ruby respectively,which comes mainly from the difference between the values of parameters at normal pressure of two crystals;moreover,the expansion of d-electron wavefunctions of α-Al2O3:Mn^4 with compression is slightly larger than the one of ruby,and the effective charge experienced by d-electrons of α-Al2O3:Mn^4 decreases with compression more rapidly than the one of ruby.In the final analysis,all these can be explained in terms of the facts that the two crystals are doped α-Al2O3 with two isoelectronic ions;the strengths of the crystal field and covalency of α-Al2O3:Mn^4 are larger than those of ruby respectively,due to the charge of Mn^4 to be larger than that of Cr^3 .     

β‘—Gd2（MoO4）3晶体生长中的过冷现象研究

对电阻加热引上法和感应加热引上法生长β‘-Gd2(MoO4)3晶体的实验结果进行了比较，分析了两种方法生长晶体过程中熔体过冷和组分过冷的情况。研究认为组分过冷主要与生长过程中MoO3的挥发，Gd2(MoO4)3熔体的粘度及固液界面的温度梯度有关，并认为感应加热引上法较之电阻加热引上法容易得到优质晶体。     

Yb：YAG晶体的生长缺陷及位错走向

用同步辐射透射白光形貌和应力双折射法研究了沿（111）方向生长的Yb:YAG晶体的生长缺陷、晶体中的位错起源和走向。Yb:YAG晶体中的生长缺陷主要有：生长条纹、核心和位错等。晶体中的位错主要起源于籽晶、杂质粒子以及生长初期的晶种和固液界面处位错成核。位错的走向垂直于生长界面,符合能量最低原理。采用凸界面生长工艺可以有效的消除晶体中的位错。