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The response time of photoemissive materials is required for detecting ultrashort duration laser pulses. In this paper, the response time of photoemission in ultrafine particle thin film is studied, and the transit time spread (TTS) and response time of peak value (tM) are discussed. The photoelectron's response time will increase with increasing energy of photons. If the surface potential barrier of thin film declines, the photoemissive sensitivity or quantum yield will rise, however the response time will also increase, which means that response-time characteristic gets worse. As an example, the response time for Ag-O-Cs thin film is calculated for different cases when photoelectrons, excited in Ag ultrafine particles, travel through Cs2O semiconductor layer to the surface and escape into vacuum. The calculated response time is about 50 fs if this thin film is irradiated by infrared rays of wavelength 1.06μm. 相似文献
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本文在前文的基础上进一步讨论了固溶胶粒的生长和施主原子浓度等问题。本文先讨论施主原子浓度的特性,证明它与杂质浓度无关;在胶粒生长后期,施主原子浓度可以近似地用杂质临界浓度表示。施主原子与胶粒的“平衡”,并不意味着系统的自由能处于极小,而是继续缓慢下降,因而在“平衡”条件下测得的施主原子浓度具有一定的零散度。进而从原子扩散角度描述小胶粒缩小和大胶粒生长的物理图象,并讨论了粒子的线度生长速率;接着讨论胶粒有一定分布时的情况。具体讨论了KCl,KBr,KI和NaCl的临界状态,及其有关参量Eβ,β。再后就热凝聚和光凝聚等问题进行一些讨论。 相似文献
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