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151.
高校思想政治教育是培养我国人才的重要途径,直接关系到人才培养的质量。在现代社会不断发展的今天,传统的思想政治教育方法已无法满足现代要求,因此,创新高校思想政治教育工作具有积极意义。笔者就结合当代大学生思想特点,对如何构建高校思想政治教育工作创新体系进行了探讨。 相似文献
152.
针对部分区域矿井离层水害严重的问题,结合淮北杨庄矿水文工程地质条件和开采条件,采用离散元数值模拟方法,研究厚层坚硬覆岩下离层发育特征及其动力突水机理。结果表明:离层在发育过程中受岩浆岩的支撑作用和应力重分布的影响呈现移动拱形特征;火成岩的冲击性破断和充足的离层水源是发生突水事故的关键因素。该研究为同类地质条件矿井的离层水害防治提供了有益参考。 相似文献
153.
We report that a deep ultraviolet (DUV) laser from the sixth harmonic of a 1064nm laser has been firstly used as light source in an ultrahigh energy-resolution angle-resolved photoemission spectroscopy (ARPES). The wavelength is 177.3nm obtained by using the second harmonic KBe2BO3F2 crystal with a frequency tripled 1064nm Nd:YVO4 laser. The large flux (10^14 - 10^15 photons/s) and narrow line width (0.26 meV) are suitable for the ultrahigh-energy resolution ARPES. The laser-ARPES can be a powerful tool to study the electronic structure at and near the Fermi level of the superconductor and correlated materials. The laser-ARPES has worked more than 500 h already. 相似文献
155.
红外透过、反射吸收光谱研究手性液晶(M1)LB膜的结构与取向 总被引:2,自引:1,他引:2
利用FTIR光谱研究了一种手性液晶化合物(M1)LB膜的结构与取向,该化合物可以形成稳定的单层与多层膜。手性分子中,芳香环平面向于垂直基片表面,分子中的烷基链部分则与基底表面法线方向成一定的角度。 相似文献
156.
A Low-Pump-Threshold High-Repetition-Rate Intracavity Optical Parametric Generator Based on Periodically Poled Lithium Niobate 总被引:1,自引:0,他引:1 下载免费PDF全文
A low-pump-threshold high-repetition-rate intracavity optical parametric generator (IOPG) by using a periodically poled lithium niobate (PPLN) is reported. The PPLN, which is 18.7mm long and has a grating period of 28.93tzm at room temperature, is inserted in a diode-end-pumped Nd:YV04 laser with an acousto-optic Q switch. The parametric generation threshold is 1.3 W (diode laser power) at a Q-switch repetition rate of 19 kHz. At an incident diode pump power of 5 W, an average signal output power of 280mW has been achieved. The signal pulse duration is approximately 85 ns. By changing the crystal temperature from 120℃ to 250℃, the signal wavelength can be tuned from 1.493μm to 1.538μm. 相似文献
157.
为了提高超声成像空间分辨率和对比度,提出了一种信噪比后滤波与特征空间融合的最小方差波束形成算法。首先,利用信号子空间划分将最小方差算法得到的权矢量投影到信号子空间中提高成像对比度,然后基于信号相干性设计滤波系数,并引入基于信噪比的噪声加权系数,最终得到融合信噪比后滤波与特征空间的最小方差算法。为验证本算法的有效性,使用FieldⅡ对点目标和吸声斑目标进行了仿真实验验证,并采用密歇根大学geabr_0实验数据进行成像。实验结果表明:所提算法在对比度和分辨率上均有所提高,明显优于传统延时叠加算法,最小方差算法和ESBMV_wiener算法,且对噪声具有较强鲁棒性。 相似文献
158.
Zhangyang Zhou 《中国物理 B》2021,30(12):126803-126803
Manipulating metal-insulator transitions in strongly correlated materials is of great importance in condensed matter physics, with implications for both fundamental science and technology. Vanadium dioxide (VO2), as an ideal model system, is metallic at high temperatures and shown a typical metal-insulator structural phase transition at 341 K from rutile structure to monoclinic structure. This behavior has been absorbed tons of attention for years. However, how to control this phase transition is still challenging and little studied. Here we demonstrated that to control the Ag nanonet arrays (NAs) in monoclinic VO2(M) could be effective to adjust this metal-insulator transition. With the increase of Ag NAs volume fraction by reducing the template spheres size, the transition temperature (Tc) decreased from 68° to 51°. The mechanism of Tc decrease was revealed as:the carrier density increases through the increase of Ag NAs volume fraction, and more free electrons injected into the VO2 films induced greater absorption energy at the internal nanometal-semiconductor junction. These results supply a new strategy to control the metal-insulator transitions in VO2, which must be instructive for the other strongly correlated materials and important for applications. 相似文献
159.
Haitao Zhou 《中国物理 B》2021,30(12):126104-126104
The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga2O3 Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal-semiconductor-metal (MSM) Schottky photodetector, a unidirectional Schottky photodetector, and a photoconductor were constructed on Ga2O3 films. The MSM Schottky devices have high gain (> 13) and high responsivity (> 2.5 A/W) at 230-250 nm, as well as slow recovery speed caused by PPC. Interestingly, applying a positive pulse voltage to the reverse-biased Ga2O3/Au Schottky junction can effectively suppress the PPC in the photodetector, while maintaining high gain. The mechanisms of gain and PPC do not strictly follow the interface trap trapping holes or the self-trapped holes models, which is attributed to the correlation with ionized oxygen vacancies in the Schottky junction. The positive pulse voltage modulates the width of the Schottky junction to help quickly neutralize electrons and ionized oxygen vacancies. The realization of suppression PPC functions and the establishment of physical models will facilitate the realization of high responsivity and fast response Schottky devices. 相似文献
160.