AlGaAs／GaAs单片集成激光发射机

报道一种新型ＡｌＧａＡｓ／ＧａＡｓ单片集成激光发射机。这种器件利用液相外延生长中的伴生高阻层，解决了半导体激光器与场效 晶体管驱动电路的工艺共容性问题，具有场效 晶体管与激光器结构同时形成且二者表面自动找平、制作简单的优点。     

用光泵浦法评价AlGaAs/GaAs/AlGaAs双异质结外延片

本文提出了采用光泵浦法评价掩埋异质结构(BH)激光器的一次外延片质量的技术。该评价技术简便易行,对样片无破坏性,且可由其测量结果预言激光器发射波长和阈值等特性。     

非线性介质光波导中的传输功率和光学双稳态

本文对结构为非线性包层/线性芯层/非线性衬底的非线性介质光波导的传输特性进行了深入的分析,给出了模场分布函数,色散关系和传输功率的一组形式统一的公式,并对其传输功率的光学双稳态特性进行了讨论.     

聚合物阵列波导光栅复用器/解复用器的参数设计与损耗分析

对中心波长为1.55 μm、 波长间隔为1.6 nm的聚合 物阵列波导光栅波分复用/解复用器进行参数设计, 并对器件的损耗进行分析. 结果表明该设计符合试验与实用化的要求.     

聚合物/二氧化硅混合型无热化阵列波导光栅参量的优化

研究一种新型无热化聚合物/二氧化硅混合波导组成的硅基二氧化硅阵列波导光栅.阵列波导光栅对温度的依赖性受波导物质的折射率和波导芯的尺寸影响.通过调节这些参量就可以减小温度对阵列波导光栅的影响.优化得到混合型阵列波导光栅在温度20~70℃范围内波谱漂移小于常规型 AWG结构的5%.     

1．55μm InGaAsP／InP应变量子阱激光器的LP－MOCVD生长

本文首次报导了生长温度为５５０℃，以三甲基镓（ＴＭＧａ）和三甲基铟（ＴＭＩｎ）为Ⅲ族源，用低压金属有机物气相沉积（ＬＦＭＯＣＶＤ〕技术，高质量１．６２ｕｍ和１．３ｕｍＩｎＧａＡｓＰ及Ｉｎ０．５７Ｇａ０．４３Ａｓ０．９８Ｐ０．０４／Ｉｎ０．７３Ｇａ０．２７Ａｓ０．６Ｐ０．４量子阶结构的生长，并给出了１．５５ｕｍＧａＡｓＰ／ＩｎＰ分别限制应变量子阱结构激光器的生长条件，激光器于室温下脉冲激射，其阈值电流密度为２．４ｋＡ／ｃｍ２。     

High-Efficient Organic Light-Emitting Diodes Using Indium Tin Oxide Treated by KMnO4 Solution as Anode

High-efficient organic light-emitting diodes (OLEDs) with indium-tin-oxide (ITO) anode treated by KMnO4 solution are demonstrated. The performance of the OLEDs depends on the concentration of KMnO4 solution and time of ultrasonic treatment. The OLED whose ITO anode was treated by ultrasonic in KMnO4 solution with concentration of 50mg/L for 15 rain displays the best performance. It has higher electroluminescent brightness and lower turn-on voltage than those of traditional devices. In particular, its efficiency can be increased by approximately 40％. The surfaces of the ITO anode with and without treating are analysed by scanning electron microscopy.     

微解理单片集成SCC激光器的纵模特性

本文给出两个计算耦合腔激光器阈值增益和纵模位置的解析表达式,详细讨论了微解理单片集成SCC激光器的纵模特性,并结合电子增益谱特性分析了一些器件的实测激射谱。     

应用激光椭圆仪测定Ga_(1-x)Al_xAs外延层的组份及其表面天然氧化膜的厚度

我们应用DJS-130电子计算机及其控制的绘图仪,在光波长λ_0=6328、入射角φ_0=70°的参数下,计算并绘制了适用于不同x值的Ga_(1-x)Al_xAs外延层及其表面天然氧化膜折射率的椭偏列线图。通过对图的分析,得到了椭偏参量(ψ、⊿)对体系光学参量的响应情况。在此基础上,确认了应用激光椭圆仪测定Ga_(1-x)Al_xAs外延层组份x值的方法简便。x值的测定范围为x≤0.55,不确定性⊿x≤±0.02,     

Increased performance of an organic light-emitting diode by employing a zinc phthalocyanine based composite hole transport layer

We demonstrate that the electroluminescent performances of organic light-emitting diodes are significantly improved by employing a zinc phthalocyanine （ZnPc）-based composite hole transport layer （c-HTL）. The optimum ris-（8-hydroxyquinoline）aluminum （Alq3）-based organic light-emitting diode with a c-HTL exhibits a lower turn-on voltage of 2.8 V, a higher maximum current efficiency of 3.40 cd/A and a higher maximum power efficiency of 1.91 lm/W, which are superior to those of the conventional device （turn-on voltage of 3.8 V, maximum current efficiency of 2.60 cd/A, and maximum power efficiency of 1.21 lm/W）. We systematically studied the effects of different kinds of N’-diphenyl-N,N’-bis（1-naphthyl）（1,1’-biphenyl）-4,4’diamine （NPB）：ZnPc c-HTL. Meanwhile, we also investigate their mechanisms different from that in the case of using ZnPc as buffer layer. The specific analysis is based on the absorption spectra of the hole transporting material and current density–voltage characteristics of the corresponding hole-only devices.